High-fidelity spin qubit operation and algorithmic initialization above 1 K.

The encoding of qubits in semiconductor spin carriers has been recognized as a promising approach to a commercial quantum computer that can be lithographically produced and integrated at scale1-10. However, the operation of the large number of qubits required for advantageous quantum applications11-13 will produce a thermal load exceeding the available cooling power of cryostats at millikelvin temperatures. As the scale-up accelerates, it becomes imperative to establish fault-tolerant operation above 1 K, at which the cooling power is orders of magnitude higher14-18. Here we tune up and operate spin qubits in silicon above 1 K, with fidelities in the range required for fault-tolerant operations at these temperatures19-21. We design an algorithmic initialization protocol to prepare a pure two-qubit state even when the thermal energy is substantially above the qubit energies and incorporate radiofrequency readout to achieve fidelities up to 99.34% for both readout and initialization. We also demonstrate single-qubit Clifford gate fidelities up to 99.85% and a two-qubit gate fidelity of 98.92%. These advances overcome the fundamental limitation that the thermal energy must be well below the qubit energies for the high-fidelity operation to be possible, surmounting a main obstacle in the pathway to scalable and fault-tolerant quantum computation.

Pulse shaping in a midwave-IR OPCPA for multi-µJ few-cycle pulse generation at 12 µm via DFG.

We report on dispersion management in mid-IR optical parametric chirped pulse amplifiers (OPCPA) aiming for high-energy few-cycle pulses beyond 4 µm. The available pulse shapers in this spectral region limit the feasibility of sufficient higher-order phase control. Intending the generation of high energy pulses at 12 µm via DFG driven by the signal and idler pulses of a midwave-IR OPCPA, we introduce alternative approaches for mid-IR pulse shaping, namely a germanium-prism pair and a sapphire-prism Martinez compressor. Furthermore, we explore the limits of bulk compression in Si and Ge for multi-mJ pulse energies.

Engineering long spin coherence times of spin-orbit qubits in silicon.

Electron-spin qubits have long coherence times suitable for quantum technologies. Spin-orbit coupling promises to greatly improve spin qubit scalability and functionality, allowing qubit coupling via photons, phonons or mutual capacitances, and enabling the realization of engineered hybrid and topological quantum systems. However, despite much recent interest, results to date have yielded short coherence times (from 0.1 to 1 µs). Here we demonstrate ultra-long coherence times of 10 ms for holes where spin-orbit coupling yields quantized total angular momentum. We focus on holes bound to boron acceptors in bulk silicon 28, whose wavefunction symmetry can be controlled through crystal strain, allowing direct control over the longitudinal electric dipole that causes decoherence. The results rival the best electron-spin qubits and are 104 to 105 longer than previous spin-orbit qubits. These results open a pathway to develop new artificial quantum systems and to improve the functionality and scalability of spin-based quantum technologies.

X-Band Parallel-Mode and Multifrequency Electron Paramagnetic Resonance Spectroscopy of S = 1/2 Bismuth Centers.

The recent successes in the isolation and characterization of several bismuth radicals inspire the development of new spectroscopic approaches for the in-depth analysis of their electronic structure. Electron paramagnetic resonance (EPR) spectroscopy is a powerful tool for the characterization of main group radicals. However, the large electron-nuclear hyperfine interactions of Bi (209Bi, I = 9/2) have presented difficult challenges to fully interpret the spectral properties for some of these radicals. Parallel-mode EPR (B1∥B0) is almost exclusively employed for the study of S > 1/2 systems but becomes feasible for S = 1/2 systems with large hyperfine couplings, offering a distinct EPR spectroscopic approach. Herein, we demonstrate the application of conventional X-band parallel-mode EPR for S = 1/2, I = 9/2 spin systems: Bi-doped crystalline silicon (Si:Bi) and the molecular Bi radicals [L(X)Ga]2Bi• (X = Cl or I) and [L(Cl)GaBi(MecAAC)]•+ (L = HC[MeCN(2,6-iPr2C6H3)]2). In combination with multifrequency perpendicular-mode EPR (X-, Q-, and W-band frequencies), we were able to fully refine both the anisotropic g- and A-tensors of these molecular radicals. The parallel-mode EPR experiments demonstrated and discussed here have the potential to enable the characterization of other S = 1/2 systems with large hyperfine couplings, which is often challenging by conventional perpendicular-mode EPR techniques. Considerations pertaining to the choice of microwave frequency are discussed for relevant spin-systems.

2D Time-Domain Spectroscopy for Determination of Energy and Momentum Relaxation Rates of Hydrogen-Like Donor States in Germanium.

We present measurements of the coherence times of excited states of hydrogen-like arsenic impurities in germanium (Ge:As) using a table-top two-dimensional time-domain spectroscopy (2D-TDS) system. We show that this laboratory system is capable of resolving the coherence lifetimes of atomic-like excited levels of impurity centers in semiconductors, such as those used in solid-state quantum information technologies, on a subpicosecond time scale. By fitting the coherent nonlinear response of the system with the known intracenter transition frequencies, we are able to monitor coherent population transfer and decay of the transitions from the 2p0 and 2p± states for different low excitation pulse fields. Furthermore, by examining the off-diagonal resonances in the 2D frequency-domain map, we are able to identify coherences between excited electronic states that are not visible via conventional single-frequency pump-probe or Hahn-echo measurements.

Bounds to electron spin qubit variability for scalable CMOS architectures.

Spins of electrons in silicon MOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with respect to their impact upon qubit performance. We chart spin qubit variability due to the unavoidable atomic-scale roughness of the Si/SiO2 interface, compiling experiments across 12 devices, and develop theoretical tools to analyse these results. Atomistic tight binding and path integral Monte Carlo methods are adapted to describe fluctuations in devices with millions of atoms by directly analysing their wavefunctions and electron paths instead of their energy spectra. We correlate the effect of roughness with the variability in qubit position, deformation, valley splitting, valley phase, spin-orbit coupling and exchange coupling. These variabilities are found to be bounded, and they lie within the tolerances for scalable architectures for quantum computing as long as robust control methods are incorporated.

On-demand electrical control of spin qubits.

Once called a 'classically non-describable two-valuedness' by Pauli, the electron spin forms a qubit that is naturally robust to electric fluctuations. Paradoxically, a common control strategy is the integration of micromagnets to enhance the coupling between spins and electric fields, which, in turn, hampers noise immunity and adds architectural complexity. Here we exploit a switchable interaction between spins and orbital motion of electrons in silicon quantum dots, without a micromagnet. The weak effects of relativistic spin-orbit interaction in silicon are enhanced, leading to a speed up in Rabi frequency by a factor of up to 650 by controlling the energy quantization of electrons in the nanostructure. Fast electrical control is demonstrated in multiple devices and electronic configurations. Using the electrical drive, we achieve a coherence time T2,Hahn ≈ 50 µs, fast single-qubit gates with Tπ/2 = 3 ns and gate fidelities of 99.93%, probed by randomized benchmarking. High-performance all-electrical control improves the prospects for scalable silicon quantum computing.

Wafer-scale nanofabrication of telecom single-photon emitters in silicon.

A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been realized in silicon. In all previous cases, however, single-photon emitters were created uncontrollably in random locations, preventing their scalability. Here, we report the controllable fabrication of single G and W centers in silicon wafers using focused ion beams (FIB) with high probability. We also implement a scalable, broad-beam implantation protocol compatible with the complementary-metal-oxide-semiconductor (CMOS) technology to fabricate single telecom emitters at desired positions on the nanoscale. Our findings unlock a clear and easily exploitable pathway for industrial-scale photonic quantum processors with technology nodes below 100 nm.

Microstructure of bismuth centers in silicon before and after irradiation with 15 MeV protons.

A decrease of two-gamma annihilation rate of a positron in a strong spin-orbit field of the annihilation site of bismuth impurity center209Bi (J= 9/2) in silicon with natural isotope composition was revealed (Jis the nuclear spin). This decrease was observed along with increasing occupancy of Bi donor states (binding energyE{Bi} ≈ 69 meV). Atoms of29Si (J= 1/2) isotope are involved in spin interactions of positron with Bi impurity centers. The growth of occupancy of Bi donor states inhibits two-gamma annihilation rate. The estimated cross-section of positron trapping by the Bi impurity center isσ+≈ (1.23-1.5) × 10-13 cm2. Together with this surprisingly large value, the integral rate of two-gamma annihilation in a hypothetical polyelectron system of the Bi impurity center is by a factor of just Δ âˆ¼ 2.18 higher compared to the magnitude ≈2.09 × 109 s-1known for elemental isolated polyelectron, (e-e+e-). Possible formation of the positron-containing exciton-like states, (e+)D0X(D= Bi, P) is also discussed. Irradiation of material with 15 MeV protons results in decreasing the factor Δ by ∼11% due to forming the radiation complex in which Bi atom is in an open volume ambient it. Such complex is suggested to haveD3dsymmetry and be the deep donor. Low-temperature measurements of both the positron annihilation rate and Hall effect have been applied for studying the isochronal annealing of these point radiation defects which were found to be thermally stable up to ∼370 °C; they can be annealed at ∼430 °C - 470 °C. According to available data ofab initiocluster calculations, the complex of Bi atom with a simulated vacancy hasD3dsymmetry with the energy gain ∼0.92 eV, thus indicating qualitative agreement between experimental and theoretical data.

Highly efficient THz four-wave mixing in doped silicon.

Third-order non-linearities are important because they allow control over light pulses in ubiquitous high-quality centro-symmetric materials like silicon and silica. Degenerate four-wave mixing provides a direct measure of the third-order non-linear sheet susceptibility χ(3)L (where L represents the material thickness) as well as technological possibilities such as optically gated detection and emission of photons. Using picosecond pulses from a free electron laser, we show that silicon doped with P or Bi has a value of χ(3)L in the THz domain that is higher than that reported for any other material in any wavelength band. The immediate implication of our results is the efficient generation of intense coherent THz light via upconversion (also a χ(3) process), and they open the door to exploitation of non-degenerate mixing and optical nonlinearities beyond the perturbative regime.

Dynamical X-ray diffraction imaging of voids in dislocation-free high-purity germanium single crystals.

White-beam X-ray topography has been performed to provide direct evidence of micro-voids in dislocation-free high-purity germanium single crystals. The voids are visible because of a dynamical diffraction contrast. It is shown that voids occur only in dislocation-free parts of the crystal and do not show up in regions with homogeneous and moderate dislocation density. It is further suggested that the voids originate from clustering of vacancies during the growth process. A general method is proposed to verify the presence of voids for any crystalline material of high structural perfection.

A photonic platform for donor spin qubits in silicon.

Donor spins in silicon are highly competitive qubits for upcoming quantum technologies, offering complementary metal-oxide semiconductor compatibility, coherence (T2) times of minutes to hours, and simultaneous initialization, manipulation, and readout fidelities near ~99.9%. This allows for many quantum error correction protocols, which will be essential for scale-up. However, a proven method of reliably coupling spatially separated donor qubits has yet to be identified. We present a scalable silicon-based platform using the unique optical properties of "deep" chalcogen donors. For the prototypical 77Se+ donor, we measure lower bounds on the transition dipole moment and excited-state lifetime, enabling access to the strong coupling limit of cavity quantum electrodynamics using known silicon photonic resonator technology and integrated silicon photonics. We also report relatively strong photon emission from this same transition. These results unlock clear pathways for silicon-based quantum computing, spin-to-photon conversion, photonic memories, integrated single-photon sources, and all-optical switches.

Contactless processing of SiGe-melts in EML under reduced gravity.

The processing of semiconductors based on electromagnetic levitation is a challenge, because this kind of materials shows a poor electrical conductivity. Here, we report the results of measurements of the thermophysical properties obtained recently from highly doped semiconductors Si1-x Ge x under microgravity conditions in the framework of parabola flight campaigns. Due to the limited time of about 20 s of microgravity especially Ge-rich samples with low melting temperatures were investigated. The measurements were performed contactlessly by video techniques with subsequent digital image processing. Linear and volume thermal expansion coefficients were measured hereby from image data. An anomaly of volume changes near the solidus temperature is visible. Viscosity and surface tension were determined by the oscillating drop technique using optic and electronic data. It was observed that the alloying of Si into Ge increases the surface tension of the melts. The viscosity is following an Arrhenius equation and shows a crossover temperature which separates simple liquid at high temperatures from cooperative liquid at low temperatures.