Antagonistic regulation of target genes by the SISTER OF TM3-JOINTLESS2 complex in tomato inflorescence branching.

Inflorescence branch number is a yield-related trait controlled by cell fate determination in meristems. Two MADS-box transcription factors (TFs)-SISTER OF TM3 (STM3) and JOINTLESS 2 (J2)-have opposing regulatory roles in inflorescence branching. However, the mechanisms underlying their regulatory functions in inflorescence determinacy remain unclear. Here, we characterized the functions of these TFs in tomato (Solanum lycopersicum) floral meristem and inflorescence meristem (IM) through chromatin immunoprecipitation and sequencing analysis of their genome-wide occupancy. STM3 and J2 activate or repress the transcription of a set of common putative target genes, respectively, through recognition and binding to CArG box motifs. FRUITFULL1 (FUL1) is a shared putative target of STM3 and J2 and these TFs antagonistically regulate FUL1 in inflorescence branching. Moreover, STM3 physically interacts with J2 to mediate its cytosolic redistribution and restricts J2 repressor activity by reducing its binding to target genes. Conversely, J2 limits STM3 regulation of target genes by transcriptional repression of the STM3 promoter and reducing STM3-binding activity. Our study thus reveals an antagonistic regulatory relationship in which STM3 and J2 control tomato IM determinacy and branch number.

Tomato APETALA2 family member SlTOE1 regulates inflorescence branching by repressing SISTER OF TM3.

Inflorescence architecture directly impacts yield potential in most crops. As a model of sympodial plants, tomato (Solanum lycopersicum) inflorescence exhibits highly structural plasticity. However, the genetic regulatory network of inflorescence architecture in tomato remains unclear. Here, we investigated a modulator of inflorescence branching in tomato, TARGET OF EAT1 (SlTOE1), an APETALA2 (AP2) family member found to be predominantly expressed in the floral meristem (FM) of tomato. sltoe1 knockout mutants displayed highly branched inflorescences and defective floral organs. Transcriptome analysis revealed that SISTER OF TM3 (STM3) and certain floral development-related genes were upregulated in the flower meristem of sltoe1. SlTOE1 could directly bind the promoters of STM3 and Tomato MADS-box gene 3 (TM3) to repress their transcription. Simultaneous mutation of STM3 and TM3 partially restored the inflorescence branching of the sltoe1cr mutants, suggesting that SlTOE1 regulates inflorescence development, at least in part through an SlTOE1STM3/TM3 module. Genetic analysis showed that SlTOE1 and ENHANCER OF JOINTLESS 2 (EJ2) additively regulate tomato inflorescence branching; their double mutants showed more extensive inflorescence branching. Our findings uncover a pathway controlling tomato inflorescence branching and offer deeper insight into the functions of AP2 subfamily members.

Hyper-Cross-linked Porous MoS2-Cyclodextrin-Polymer Frameworks: Durable Removal of Aromatic Phenolic Micropollutant from Water.

A reasonable and efficient strategy for the construction of hyper-cross-linked porous MoS2-CD-polymer frameworks (MoS2CDPFs) was demonstrated. Here, MoS2 nanosheets (NSs) can be decorated with amino functionalized ß-cyclodextrin, producing a nanoscale structural motif (MoS2@CD) for the synthesis of MoS2CDPFs. We demonstrated that CD polymer (CDP) as linker can be uniformly incorporated into the frameworks. Except for the pores created between MoS2 NSs, polymer doping generates extra interspace between MoS2 NSs and CD monomer. Interestingly, the resultant MoS2CDPFs can rapidly sequester aromatic phenolic micropollutant bisphenol A (0.1 mM) from water with 93.2% adsorption capacity, which is higher than that of MoS2, MoS2@CD, and CDP. The intercalation between MoS2 sheets with CDP imparts the frameworks durability in adsorption/desorption of aromatic phenolic micropollutants. Remarkably, the removal efficiency reduced only 3% after 10 regeneration-reuse cycles. These findings demonstrated that the porous MoS2-CD-polymer-based frameworks are promising adsorbents for rapid, flow-through water remediation.

High-speed graphene transistors with a self-aligned nanowire gate.

Graphene has attracted considerable interest as a potential new electronic material. With its high carrier mobility, graphene is of particular interest for ultrahigh-speed radio-frequency electronics. However, conventional device fabrication processes cannot readily be applied to produce high-speed graphene transistors because they often introduce significant defects into the monolayer of carbon lattices and severely degrade the device performance. Here we report an approach to the fabrication of high-speed graphene transistors with a self-aligned nanowire gate to prevent such degradation. A Co(2)Si-Al(2)O(3) core-shell nanowire is used as the gate, with the source and drain electrodes defined through a self-alignment process and the channel length defined by the nanowire diameter. The physical assembly of the nanowire gate preserves the high carrier mobility in graphene, and the self-alignment process ensures that the edges of the source, drain and gate electrodes are automatically and precisely positioned so that no overlapping or significant gaps exist between these electrodes, thus minimizing access resistance. It therefore allows for transistor performance not previously possible. Graphene transistors with a channel length as low as 140 nm have been fabricated with the highest scaled on-current (3.32 mA µm(-1)) and transconductance (1.27 mS µm(-1)) reported so far. Significantly, on-chip microwave measurements demonstrate that the self-aligned devices have a high intrinsic cut-off (transit) frequency of f(T) = 100-300 GHz, with the extrinsic f(T) (in the range of a few gigahertz) largely limited by parasitic pad capacitance. The reported intrinsic f(T) of the graphene transistors is comparable to that of the very best high-electron-mobility transistors with similar gate lengths.

High-frequency self-aligned graphene transistors with transferred gate stacks.

Graphene has attracted enormous attention for radio-frequency transistor applications because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. Herein we report a new approach for the scalable fabrication of high-performance graphene transistors with transferred gate stacks. Specifically, arrays of gate stacks are first patterned on a sacrificial substrate, and then transferred onto arbitrary substrates with graphene on top. A self-aligned process, enabled by the unique structure of the transferred gate stacks, is then used to position precisely the source and drain electrodes with minimized access resistance or parasitic capacitance. This process has therefore enabled scalable fabrication of self-aligned graphene transistors with unprecedented performance including a record-high cutoff frequency up to 427 GHz. Our study defines a unique pathway to large-scale fabrication of high-performance graphene transistors, and holds significant potential for future application of graphene-based devices in ultra-high-frequency circuits.

Persistent pollution of genetic materials in a typical laboratory environment.

From the onset of coronavirus disease (COVID-19) pandemic, there are concerns regarding the disease spread and environmental pollution of biohazard since studies on genetic engineering flourish and numerous genetic materials were used such as the nucleic acid test of the severe acute respiratory syndrome coronavirus (SARS-CoV-2). In this work, we studied genetic material pollution in an institute during a development cycle of plasmid, one of typical genetic materials, with typical laboratory settings. The pollution source, transmission routes, and pollution levels in laboratory environment were examined. The Real-Time quantitative- Polymerase Chain Reaction results of all environmental mediums (surface, aerosol, and liquid) showed that a targeted DNA segment occurred along with routine experimental operations. Among the 79 surface and air samples collected in the genetic material operation, half of the environment samples (38 of 79) are positive for nucleic acid pollution. Persistent nucleic acid contaminations were observed in all tested laboratories and spread in the public area (hallway). The highest concentration for liquid and surface samples were 1.92 × 108 copies/uL and 5.22 × 107 copies/cm2, respectively. Significant amounts of the targeted gene (with a mean value of 74 copies/L) were detected in the indoor air of laboratories utilizing centrifuge devices, shaking tables, and cell homogenizers. Spills and improper disposal of plasmid products were primary sources of pollution. The importance of establishing designated experimental zones, employing advanced biosafety cabinets, and implementing highly efficient cleaning systems in laboratories with lower biosafety levels is underscored. SYNOPSIS: STATEMENT. Persistent environmental pollutions of genetic materials are introduced by typical experiments in laboratories with low biosafety level.

The combination of DNA nanostructures and materials for highly sensitive electrochemical detection.

Due to the wide range of electrochemical devices available, DNA nanostructures and material-based technologies have been greatly broadened. They have been actively used to create a variety of beautiful nanostructures owing to their unmatched programmability. Currently, a variety of electrochemical devices have been used for rapid sensing of biomolecules and other diagnostic applications. Here, we provide a brief overview of recent advances in DNA-based biomolecular assays. Biosensing platform such as electrochemical biosensor, nanopore biosensor, and field-effect transistor biosensors (FET), which are equipped with aptamer, DNA walker, DNAzyme, DNA origami, and nanomaterials, has been developed for amplification detection. Under the optimal conditions, the proposed biosensor has good amplification detection performance. Further, we discussed the challenges of detection strategies in clinical applications and offered the prospect of this field.

High-kappa oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors.

Deposition of high-kappa dielectrics onto graphene is of significant challenge due to the difficulties of nucleating high quality oxide on pristine graphene without introducing defects into the monolayer of carbon lattice. Previous efforts to deposit high-kappa dielectrics on graphene often resulted in significant degradation in carrier mobility. Here we report an entirely new strategy to integrate high quality high-kappa dielectrics with graphene by first synthesizing freestanding high-kappa oxide nanoribbons at high temperature and then transferring them onto graphene at room temperature. We show that single crystalline Al(2)O(3) nanoribbons can be synthesized with excellent dielectric properties. Using such nanoribbons as the gate dielectrics, we have demonstrated top-gated graphene transistors with the highest carrier mobility (up to 23,600 cm(2)/V x s) reported to date, and a more than 10-fold increase in transconductance compared to the back-gated devices. This method opens a new avenue to integrate high-kappa dielectrics on graphene with the preservation of the pristine nature of graphene and high carrier mobility, representing an important step forward to high-performance graphene electronics.

Scalable fabrication of self-aligned graphene transistors and circuits on glass.

Graphene transistors are of considerable interest for radio frequency (rf) applications. High-frequency graphene transistors with the intrinsic cutoff frequency up to 300 GHz have been demonstrated. However, the graphene transistors reported to date only exhibit a limited extrinsic cutoff frequency up to about 10 GHz, and functional graphene circuits demonstrated so far can merely operate in the tens of megahertz regime, far from the potential the graphene transistors could offer. Here we report a scalable approach to fabricate self-aligned graphene transistors with the extrinsic cutoff frequency exceeding 50 GHz and graphene circuits that can operate in the 1-10 GHz regime. The devices are fabricated on a glass substrate through a self-aligned process by using chemical vapor deposition (CVD) grown graphene and a dielectrophoretic assembled nanowire gate array. The self-aligned process allows the achievement of unprecedented performance in CVD graphene transistors with a highest transconductance of 0.36 mS/µm. The use of an insulating substrate minimizes the parasitic capacitance and has therefore enabled graphene transistors with a record-high extrinsic cutoff frequency (> 50 GHz) achieved to date. The excellent extrinsic cutoff frequency readily allows configuring the graphene transistors into frequency doubling or mixing circuits functioning in the 1-10 GHz regime, a significant advancement over previous reports (∼20 MHz). The studies open a pathway to scalable fabrication of high-speed graphene transistors and functional circuits and represent a significant step forward to graphene based radio frequency devices.

Evaluating the Accuracy of Impedance Flow Cytometry with Cell-Sized Liposomes.

Electrical properties of single cells are important label-free biomarkers of disease and immunity. At present, impedance flow cytometry (IFC) provides important means for high throughput characterization of single-cell electrical properties. However, the accuracy of the spherical single-shell electrical model widely used in IFC has not been well evaluated due to the lack of reliable and reproducible single-shell model particles with true-value electrical parameters as benchmarks. Herein, a method is proposed to evaluate the accuracy of the single-cell electrical model with cell-sized unilamellar liposomes synthesized through double emulsion droplet microfluidics. The influence of three key dimension parameters (i.e., the measurement channel width w, height h, and electrode gap g) in the single-cell electrical model were evaluated through experiment. It was found that the relative error of the electrical intrinsic parameters measured by IFC is less than 10% when the size of the sensing zone is close to the measured particles. It further reveals that h has the greatest influence on the measurement accuracy, and the maximum relative error can reach ∼30%. Error caused by g is slightly larger than w. This provides a solid guideline for the design of IFC measurement system. It is envisioned that this method can advance further improvement of IFC and accurate electrical characterization of single cells.

An ultrasensitive and rapid "sample-to-answer" microsystem for on-site monitoring of SARS-CoV-2 in aerosols using "in situ" tetra-primer recombinase polymerase amplification.

Airborne transmissibility of severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) has highlighted the urgent need for aerosol monitoring of SARS-CoV-2 to prevent sporadic outbreaks of COVID-19. The inadequate sensitivity of conventional methods and the lack of an on-site detection system limited the practical SARS-CoV-2 monitoring of aerosols in public spaces. We have developed a novel SARS-CoV-2-in-aerosol monitoring system (SIAMs) which consists of multiple portable cyclone samplers for collecting aerosols from several venues and a sensitive "sample-to-answer" microsystem employing an integrated cartridge for the analysis of SARS-CoV-2 in aerosols (iCASA) near the sampling site. By seamlessly combining viral RNA extraction based on a chitosan-modified quartz filter and "in situ" tetra-primer recombinase polymerase amplification (tpRPA) into an integrated microfluidic cartridge, iCASA can provide an ultra-high sensitivity of 20 copies/mL, which is nearly one order of magnitude greater than that of the commercial kit, and a short turnaround time of 25 min. By testing various clinical samples of nasopharyngeal swabs, saliva, and exhaled breath condensates obtained from 23 COVID-19 patients, we demonstrate that the positive rate of our system was 3.3 times higher than those of the conventional method. Combining with multiple portable cyclone samplers, we detected 52.2% (12/23) of the aerosol samples, six times higher than that of the commercial kit, collected from the isolation wards of COVID-19 patients, demonstrating the excellent performance of our system for SARS-CoV-2-in-aerosol monitoring. We envision the broad application of our microsystem in aerosol monitoring for fighting the COVID-19 pandemic.

Top-gated chemical vapor deposition grown graphene transistors with current saturation.

Graphene transistors are of considerable interest for radio frequency (rf) applications. In general, transistors with large transconductance and drain current saturation are desirable for rf performance, which is however nontrivial to achieve in graphene transistors. Here we report high-performance top-gated graphene transistors based on chemical vapor deposition (CVD) grown graphene with large transconductance and drain current saturation. The graphene transistors were fabricated with evaporated high dielectric constant material (HfO(2)) as the top-gate dielectrics. Length scaling studies of the transistors with channel length from 5.6 µm to 100 nm show that complete current saturation can be achieved in 5.6 µm devices and the saturation characteristics degrade as the channel length shrinks down to the 100-300 nm regime. The drain current saturation was primarily attributed to drain bias induced shift of the Dirac points. With the selective deposition of HfO(2) gate dielectrics, we have further demonstrated a simple scheme to realize a 300 nm channel length graphene transistors with self-aligned source-drain electrodes to achieve the highest transconductance of 250 µS/µm reported in CVD graphene to date.

Edge effect on resistance scaling rules in graphene nanostructures.

We report an experimental investigation of the edge effect on the room-temperature transport in graphene nanoribbon and graphene sheet (both single-layer and bilayer). By measuring the resistance scaling behaviors at both low- and high-carrier densities, we show that the transport of single-layer nanoribbons lies in a strong localization regime, which can be attributed to an edge effect. We find that this edge effect can be weakened by enlarging the width, decreasing the carrier densities, or adding an extra layer. From graphene nanoribbon to graphene sheet, the data show a dimensional crossover of the transport regimes possibly due to the drastic change of the edge effect.

Multiplexed nanomaterial-assisted laser desorption/ionization for pan-cancer diagnosis and classification.

As cancer is increasingly considered a metabolic disorder, it is postulated that serum metabolite profiling can be a viable approach for detecting the presence of cancer. By multiplexing mass spectrometry fingerprints from two independent nanostructured matrixes through machine learning for highly sensitive detection and high throughput analysis, we report a laser desorption/ionization (LDI) mass spectrometry-based liquid biopsy for pan-cancer screening and classification. The Multiplexed Nanomaterial-Assisted LDI for Cancer Identification (MNALCI) is applied in 1,183 individuals that include 233 healthy controls and 950 patients with liver, lung, pancreatic, colorectal, gastric, thyroid cancers from two independent cohorts. MNALCI demonstrates 93% sensitivity at 91% specificity for distinguishing cancers from healthy controls in the internal validation cohort, and 84% sensitivity at 84% specificity in the external validation cohort, with up to eight metabolite biomarkers identified. In addition, across those six different cancers, the overall accuracy for identifying the tumor tissue of origin is 92% in the internal validation cohort and 85% in the external validation cohort. The excellent accuracy and minimum sample consumption make the high throughput assay a promising solution for non-invasive cancer diagnosis.

Top-gated graphene nanoribbon transistors with ultrathin high-k dielectrics.

The integration ultrathin high dielectric constant (high-k) materials with graphene nanoribbons (GNRs) for top-gated transistors can push their performance limit for nanoscale electronics. Here we report the assembly of Si/HfO(2) core/shell nanowires on top of individual GNRs as the top-gates for GNR field-effect transistors with ultrathin high-k dielectrics. The Si/HfO(2) core/shell nanowires are synthesized by atomic layer deposition of the HfO(2) shell on highly doped silicon nanowires with a precise control of the dielectric thickness down to 1-2 nm. Using the core/shell nanowires as the top-gates, high-performance GNR transistors have been achieved with transconductance reaching 3.2 mS microm(-1), the highest value for GNR transistors reported to date. This method, for the first time, demonstrates the effective integration of ultrathin high-k dielectrics with graphene with precisely controlled thickness and quality, representing an important step toward high-performance graphene electronics.

Sub-100 nm channel length graphene transistors.

Here we report high-performance sub-100 nm channel length graphene transistors fabricated using a self-aligned approach. The graphene transistors are fabricated using a highly doped GaN nanowire as the local gate with the source and drain electrodes defined through a self-aligned process and the channel length defined by the nanowire size. This fabrication approach allows the preservation of the high carrier mobility in graphene and ensures nearly perfect alignment between source, drain, and gate electrodes. It therefore affords transistor performance not previously possible. Graphene transistors with 45-100 nm channel lengths have been fabricated with the scaled transconductance exceeding 2 mS/µm, comparable to the best performed high electron mobility transistors with similar channel lengths. Analysis of and the device characteristics gives a transit time of 120-220 fs and the projected intrinsic cutoff frequency (f(T)) reaching 700-1400 GHz. This study demonstrates the exciting potential of graphene based electronics in terahertz electronics.

Enhanced conductance fluctuation by quantum confinement effect in graphene nanoribbons.

Conductance fluctuation is usually unavoidable in graphene nanoribbons (GNR) due to the presence of disorder along its edges. By measuring the low-frequency noise in GNR devices, we find that the conductance fluctuation is strongly correlated with the density-of-states of GNR. In single-layer GNR, the gate-dependence of noise shows peaks whose positions quantitatively match the subband positions in the band structures of GNR. This correlation provides a robust mechanism to electrically probe the band structure of GNR, especially when the subband structures are smeared out in conductance measurement.

Controlled movement of ssDNA conjugated peptide through Mycobacterium smegmatis porin A (MspA) nanopore by a helicase motor for peptide sequencing application.

The lack of an efficient, low-cost sequencing method has long been a significant bottleneck in protein research and applications. In recent years, the nanopore platform has emerged as a fast and inexpensive method for single-molecule nucleic acid sequencing, but attempts to apply it to protein/peptide sequencing have resulted in limited success. Here we report a strategy to control peptide translocation through the MspA nanopore, which could serve as the first step toward strand peptide sequencing. By conjugating the target peptide to a helicase-regulated handle-ssDNA, we achieved a read length of up to 17 amino acids (aa) and demonstrated the feasibility of distinguishing between amino acid residues of different charges or between different phosphorylation sites. Further improvement of resolution may require engineering MspA-M2 to reduce its constriction zone's size and stretch the target peptide inside the nanopore to minimize random thermal motion. We believe that our method in this study can significantly accelerate the development and commercialization of nanopore-based peptide sequencing technologies.

Single-layer graphene on Al2O3/Si substrate: better contrast and higher performance of graphene transistors.

The fact that single-layer graphene can be visualized on 300 nm SiO(2)/Si substrate using an optical microscope has enabled the facile fabrication of single-layer graphene devices for fundamental studies and potential applications. Here we report on an Al(2)O(3)/Si substrate for the fabrication of graphene devices with better contrast and higher performance. Our studies show that the contrast of single-layer graphene on 72 nm Al(2)O(3)/Si substrate is much better than that of single-layer graphene on 300 nm SiO(2)/Si substrate. Moreover, the transconductance of single-layer graphene transistors on Al(2)O(3)/Si substrate shows a more than sevenfold increase, due to the smaller dielectric thickness and higher dielectric constant in a 72 nm Al(2)O(3) film. These studies demonstrate a new and superior substrate for the fabrication of graphene transistors, and are of significance for both fundamental studies and technological applications.

Rational fabrication of graphene nanoribbons using a nanowire etch mask.

We report a rational approach to fabricate graphene nanoribbons (GNRs) with sub-10 nm width by employing chemically synthesized nanowires as the physical protection mask in oxygen plasma etch. Atomic force microscopy study shows that the patterns of the resulted nanoribbons replicate exactly those of mask nanowires so that ribbons or branched or crossed graphene nanostructures can be produced. Our study shows a linear scaling relation between the resulted GNR widths and mask nanowire diameters with variable slopes for different etching times. GNRs with controllable widths down to 6 nm have been demonstrated. We have fabricated GNR field effect transistors (FETs) with nanoribbons directly connected to bulk graphene electrodes. Electrical measurements on an 8 nm GNR-FET show room temperature transistor behavior with an on/off ratio around 160, indicating appreciable band gaps arise due to lateral confinement. We find the on/off ratio in the log scale inversely scales with ribbon width. This approach opens a new avenue to graphene nanoribbons and other graphene nanostructures in the deep nanometer regime without sophisticated lithography. It thus opens exciting new opportunities for graphene nanodevice engineering.