Structural and Chemical Properties of NiOx Thin Films: Oxygen Vacancy Formation in O2 Atmosphere.

NiOx films on Si(111) were put in contact with oxygen at elevated temperatures. During heating and cooling in oxygen atmosphere Near Ambient Pressure (NAP)-XPS and -XAS and work function (WF) measurements reveal the creation and replenishing of oxygen vacancies in dependence of temperature. Oxygen vacancies manifest themselves as a distinct O1s feature at 528.9 eV on the low binding energy side of the main NiO peak as well as by a distinct deviation of the Ni2p3/2 spectral features from the typical NiO spectra. DFT calculations reveal that the presence of oxygen vacancies leads to a charge redistribution and altered bond lengths of the atoms surrounding the vacancies causing the observed spectral changes. Furthermore, we observed that a broadening of the lowest energy peak in the O K-edge spectra can be attributed to oxygen vacancies. In the presence of oxygen vacancies, the WF is lowered by 0.1 eV.

Structural and chemical properties of NiOx thin films: the role of oxygen vacancies in NiOOH formation in a H2O atmosphere.

NiOx films grown from 50 nm thick Ni on Si(111) were put in contact with oxygen and subsequently water vapor at elevated temperatures. Near ambient pressure (NAP)-XPS and -XAS reveal the formation of oxygen vacancies at elevated temperatures, followed by H2O dissociation and saturation of the oxygen vacancies with chemisorbing OH. Through repeated heating and cooling, OH-saturated oxygen vacancies act as precursors for the formation of thermally stable NiOOH on the sample surface. This is accompanied by a significant restructuring of the surface which increases the probability of NiOOH formation. Exposure of a thin NiOx film to H2O can lead to a partial reduction of NiOx to metallic Ni accompanied by a distinct shift of the NiOx spectra with respect to the Fermi edge. DFT calculations show that the formation of oxygen vacancies and subsequently Ni0 leads to a state within the band gap of NiO which pins the Fermi edge.

Investigation of the potassium fluoride post deposition treatment on the CIGSe/CdS interface using hard X-ray photoemission spectroscopy - a comparative study.

The impact of the potassium fluoride post deposition treatment on CIGSe chalcopyrite absorbers is investigated by means of depth resolved hard X-ray photoemission spectroscopy of the near surface region. Two similar, slightly Cu-poor CIGSe absorbers were used with one being treated by potassium fluoride prior to the chemical bath deposition of an ultrathin CdS layer. The thickness of the CdS layer was chosen to be in the range of about 10 nm in order to allow the investigation of the CIGSe/CdS interface by the application of hard X-rays, increasing the information depth up to 30 nm. Besides strong intermixing on both samples, an increased Cu depletion of the KF treated absorber was observed in combination with an increased accumulation of Cd and S. In addition, a general shift of about 0.15 eV to higher binding energies of the CIGSe valence band at the absorber surface as well as the CIGSe and CdS related core levels was measured on the KF treated sample. This phenomenon is attributed to the impact of additional cadmium which acts as donor and releases further electrons into the conduction band of the absorber. Finally, the electrons accumulate at the CdS surface after having passed the interface region. This additional surface charge leads to a pronounced shift in the photoemission spectra as observed on the KF treated CIGSe absorber compared to the non-treated absorber.

Formation of an electron hole doped film in the α-Fe2O3 photoanode upon electrochemical oxidation.

Solar hydrogen generation by water splitting in photoelectrochemical cells (PEC) is an appealing technology for a future hydrogen economy. Hematite is a prospective photoanode material in this respect because of its visible light conjugated band gap, its corrosion stability, its environmentally benign nature and its low cost. Its bulk and surface electronic structure has been under scrutiny for many decades and is considered critical for improvement of efficiency. In the present study, hematite films of nominally 500 nm thickness were obtained by dip-coating on fluorine doped tin oxide (FTO) glass slides and then anodised in 1 molar KOH at 500, 600, and 700 mV for 1, 10, 120 and 1440 minutes under dark conditions. X-ray photoelectron spectra recorded at the Fe 3p resonant absorption threshold show that the e(g) transition before the Fermi energy, which is well developed in the pristine hematite film, becomes depleted upon anodisation. The spectral weight of the e(g) peak decreases with the square-root of the anodisation time, pointing to a diffusion controlled process. The speed of this process increases with the anodisation potential, pointing to Arrhenius behaviour. Concomitantly, the weakly developed t(2g) peak intensity becomes enhanced in the same manner. This suggests that the surface of the photoanode contains Fe(2+) species which become oxidized toward Fe(3+) during anodisation. The kinetic behaviour derived from the experimental data suggests that the anodisation forms an electron hole doped film on and below the hematite surface.

Visualizing anisotropy in the surface oxidation of germanium by wet etching of patterned nanowedges: proof of concept.

We study the anisotropy in surface oxidation for Ge(100) and (110) in HCl/H2O2 solution complemented by synchrotron X-ray photoemission spectroscopy (SXPS) measurements integrated with an in situ etching chamber. Visual anisotropic demonstration is confirmed by lithographic Ge nanowedges.