L10 FePtCu bit patterned media.

Chemically ordered 5 nm-thick L10 FePtCu films with strong perpendicular magnetic anisotropy were post-patterned by nanoimprint lithography into a dot array over a 3 mm-wide circumferential band on a 3 inch Si wafer. The dots with a diameter of 30 nm and a center-to-center pitch of 60 nm appear as single domain and reveal an enhanced switching field as compared to the continuous film. We demonstrate successful recording on a single track using shingled writing with a conventional hard disk drive write/read head.

Coulomb blockade in an open quantum dot.

We report the observation of Coulomb blockade in a quantum dot contacted by two quantum point contacts each with a single fully transmitting mode, a system thought to be well described without invoking Coulomb interactions. Below 50 mK we observe a periodic oscillation in the conductance of the dot with gate voltage, corresponding to a residual quantization of charge. From the temperature and magnetic field dependence, we infer the oscillations are mesoscopic Coulomb blockade, a type of Coulomb blockade caused by electron interference in an otherwise open system.

Near-surface nanoscale InAs Hall cross sensitivity to localized magnetic and electric fields.

We have measured the room temperature response of nanoscale semiconductor Hall crosses to local applied magnetic fields under various local electric gate conditions using scanning probe microscopy. Near-surface quantum wells of AlSb/InAs/AlSb, located just 5 nm from the heterostructure surface, allow very high sensitivity to localized electric and magnetic fields applied near the device surfaces. The Hall crosses have critical dimensions of 400 and 100 nm, while the mean free path of the carriers is about 160 nm; hence the devices nominally span the transition from diffusive to quasi-ballistic transport. With certain small gate voltages (V(g)) the devices of both sizes are strongly responsive to the local magnetic field at the center of the cross, and the results are well described using finite element modeling. At high V(g), the response to local magnetic fields is greatly distorted by strong electric fields applied near the cross corners. However we observe no change in behavior with the size of the device.

Scanning magnetoresistive microscopy: An advanced characterization tool for magnetic nanosystems.

An advanced scanning magnetoresistive microscopy (SMRM) - a robust magnetic imaging and probing technique - will be presented, which utilizes state-of-the-art recording heads of a hard disk drive as sensors. The spatial resolution of modern tunneling magnetoresistive sensors is nowadays comparable to the more commonly used magnetic force microscopes. Important advantages of SMRM are the ability to detect pure magnetic signals directly proportional to the out-of-plane magnetic stray field, negligible sensor stray fields, and the ability to apply local bipolar magnetic field pulses up to 10 kOe with bandwidths from DC up to 1 GHz. Moreover, the SMRM can be further equipped with a heating stage and external magnetic field units. The performance of this method and corresponding best practices are demonstrated by presenting various examples, including a temperature dependent recording study on hard magnetic L1(0) FeCuPt thin films, imaging of magnetic vortex states in an in-plane magnetic field, and their controlled manipulation by applying local field pulses.

Universal scaling in nonequilibrium transport through a single channel Kondo dot.

Scaling laws and universality play an important role in our understanding of critical phenomena and the Kondo effect. We present measurements of nonequilibrium transport through a single-channel Kondo quantum dot at low temperature and bias. We find that the low-energy Kondo conductance is consistent with universality between temperature and bias and is characterized by a quadratic scaling exponent, as expected for the spin-1/2 Kondo effect. We show that the nonequilibrium Kondo transport measurements are well described by a universal scaling function with two scaling parameters.

Novel orientational ordering and reentrant metallicity in K(x)C(60) monolayers for 3 < or = x < or = 5.

STM studies on K(x)C(60) monolayers reveal new behavior over a wide range of the phase diagram. As x increases from 3 to 5 K(x)C(60) monolayers undergo metal-insulator-metal reentrant phase transitions and exhibit a variety of novel orientational orderings, including a complex 7-molecule, pinwheel-like structure. The proposed driving mechanism for the orientational ordering is the lowering of electron kinetic energy by maximizing the overlap of neighboring molecular orbitals. In insulating (metallic) K(x)C(60) this gives rise to orbital versions of the superexchange (double-exchange) interaction.

Spatially dependent inelastic tunneling in a single metallofullerene.

We have measured the elastic and inelastic tunneling properties of isolated Gd@C(82) molecules on Ag(001) using cryogenic scanning tunneling spectroscopy. We find that the dominant inelastic channel is spatially well localized to a particular region of the molecule. Ab initio pseudopotential density-functional theory calculations indicate that this channel arises from a vibrational cage mode. We further show that the observed inelastic tunneling localization is explained by strong localization in the molecular electron-phonon coupling to this mode.

Visualization of the molecular Jahn-Teller effect in an insulating K4C60 monolayer.

We present a low-temperature scanning tunneling microscopy (STM) study of K(x)C60 monolayers on Au(111) for 3 < or = x < or = 4. The STM spectrum evolves from one that is characteristic of a metal at x = 3 to one that is characteristic of an insulator at x = 4. This electronic transition is accompanied by a dramatic structural rearrangement of the C60 molecules. The Jahn-Teller effect, a charge-induced mechanical deformation of molecular structure, is directly visualized in the K4C60 monolayer at the single-molecule level. These results, along with theoretical analyses, provide strong evidence that the transition from metal to insulator in K(x)C60 monolayers is caused by the Jahn-Teller effect.

Controlled atomic doping of a single C60 molecule.

We report a method for controllably attaching an arbitrary number of charge dopant atoms directly to a single, isolated molecule. Charge-donating K atoms adsorbed on a silver surface were reversibly attached to a C60 molecule by moving it over K atoms with a scanning tunneling microscope tip. Spectroscopic measurements reveal that each attached K atom donates a constant amount of charge (approximately 0.6 electron charge) to the C60 host, thereby enabling its molecular electronic structure to be precisely and reversibly tuned.

Temperature dependence of a single Kondo impurity.

Recent advances in scanning tunneling microscopy have allowed the observation of the Kondo effect for individual magnetic atoms. One hallmark of the Kondo effect is a strong temperature-induced broadening of the Kondo resonance. In order to test this prediction for individual impurities, we have investigated the temperature dependent electronic structure of isolated Ti atoms on Ag(100). We find that the Kondo resonance is strongly broadened in the temperature range T = 6.8 K to T = 49.0 K. These results are in good agreement with theoretical predictions for Kondo impurities in the Fermi liquid regime, and confirm the role of electron-electron scattering as the main thermal broadening mechanism.

Spatially mapping the spectral density of a single C60 molecule.

We have used scanning tunneling spectroscopy to spatially map the energy-resolved local density of states of individual C60 molecules on the Ag(100) surface. Spectral maps were obtained for molecular states derived from the C60 HOMO, LUMO, and LUMO+1 orbitals, revealing new details of the spatially inhomogeneous C60 local electronic structure. Spatial inhomogeneities are explained using ab initio pseudopotential density functional calculations. These calculations emphasize the need for explicitly including the C60-Ag interaction and STM tip trajectory to understand the observed C60 local electronic structure.