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1.
Sensors (Basel) ; 22(17)2022 Sep 03.
Artículo en Inglés | MEDLINE | ID: mdl-36081127

RESUMEN

We examined the possibility of measuring dissolved oxygen by using a potentiometric solid-state semiconductor sensor. Thin films of tin (IV) oxide (SnO2) are widely used in oxygen gas sensors. However, their ability to detect dissolved oxygen (DO) in solutions is still unknown. In this paper, we present a method for investigating the dissolved oxygen-sensing properties of SnO2 thin films in solutions by fabricating a SnO2-gate field-effect transistor (FET). A similarly structured hydrogen ion-sensitive silicon nitride (Si3N4)-gate FET was fabricated using the same method. The transfer characteristics and sensitivities were experimentally obtained and compared. The transfer characteristics of the FET show a shift in threshold voltage in response to a decrease in DO concentration. The SnO2-gate FET exhibited a sensitivity of 4 mV/ppm, whereas the Si3N4-gate FET showed no response to DO. Although the SnO2-gate FET responds to pH changes in the solution, this sensitivity issue can be eliminated by using a Si3N4-gate FET, which is capable of selectively sensing hydrogen ions without DO sensitivity. The experimental results indicate the promising properties of SnO2 thin films for multimodal sensing applications.

2.
Sensors (Basel) ; 18(1)2018 Jan 05.
Artículo en Inglés | MEDLINE | ID: mdl-29304011

RESUMEN

We developed a Fabry-Perot interferometer sensor with a metal-oxide-semiconductor field-effect transistor (MOSFET) circuit for chemical sensing. The novel signal transducing technique was performed in three steps: mechanical deflection, transmittance change, and photocurrent change. A small readout photocurrent was processed by an integrated source follower circuit. The movable film of the sensor was a 350-nm-thick polychloro-para-xylylene membrane with a diameter of 100 µm and an air gap of 300 nm. The linearity of the integrated source follower circuit was obtained. We demonstrated a gas response using 80-ppm ethanol detected by small membrane deformation of 50 nm, which resulted in an output-voltage change with the proposed high-efficiency transduction.

3.
Biosensors (Basel) ; 12(11)2022 Nov 17.
Artículo en Inglés | MEDLINE | ID: mdl-36421151

RESUMEN

This study proposed a filter-free wavelength sensor with a double-well structure for detecting fluorescence without an optical filter. The impurity concentration was optimized and simulated to form a double-well-structured sensor, of which the result was consistent with the fabricated sensor. Furthermore, we proposed a novel wavelength detection method using the current ratio based on the silicon absorption coefficient. The results showed that the proposed method successfully detected single wavelengths in the 460-800 nm range. Additionally, we confirmed that quantification was possible using the current ratio of the sensor for a relatively wide band wavelength, such as fluorescence. Finally, the fluorescence that was emitted from the reagents ALEXA488, 594, and 680 was successfully identified and quantified. The proposed sensor can detect wavelengths without optical filters, which can be used in various applications in the biofield, such as POCT as a miniaturized wavelength detection sensor.


Asunto(s)
Silicio , Silicio/química , Fluorescencia
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