Anoxic gas recirculation system for fouling control in anoxic membrane reactor.

Anoxic gas recirculation system was applied to control the membrane fouling in pilot-scale 4-stage anoxic membrane bioreactor (MBR). In the anaerobic-anoxic-anoxic-aerobic flow scheme, hydrophilic polytetrafluoroethylene (PTFE) membrane (0.2 µm, 7.2 m(2)/module) was submerged in the second anoxic zone. During 8 months operation, the average flux of the membrane was 21.3 L/(m(2)·hr). Chemical cleaning of the membrane was conducted only once with sodium hydroxide and sodium hypochlorite. Dissolved oxygen (DO) concentration in the second anoxic zone was maintained with an average of 0.19 ± 0.05 mg/L. Gas chromatography analysis showed that the headspace gas in the second anoxic reactor was mainly consisted of N2 (93.0% ± 2.5%), O2 (3.8% ± 0.6%), and CO2 (3.0% ± 0.5%), where the saturation DO concentration in liquid phase was 1.57 mg/L. Atmospheric O2 content (20.5% ± 0.8%) was significantly reduced in the anoxic gas. The average pH in the reactor was 7.2 ± 0.4. As a result, the recirculation of the anoxic gas was successfully applied to control the membrane fouling in the anoxic MBR.

Polymer link breakage of polyimide-film-surface using hydrolysis reaction accelerator for enhancing chemical-mechanical-planarization polishing-rate.

In this study, the chemical decomposition of a polyimide-film (i.e., a PI-film)-surface into a soft-film-surface containing negatively charged pyromellitic dianhydride (PMDA) and neutral 4,4'-oxydianiline (ODA) was successfully performed. The chemical decomposition was conducted by designing the slurry containing 350 nm colloidal silica abrasive and small molecules with amine functional groups (i.e., ethylenediamine: EDA) for chemical-mechanical planarization (CMP). This chemical decomposition was performed through two types of hydrolysis reactions, that is, a hydrolysis reaction between OH- ions or R-NH3+ (i.e., EDA with a positively charged amine groups) and oxygen atoms covalently bonded with pyromellitimide on the PI-film-surface. In particular, the degree of slurry adsorption of the PI-film-surface was determined by the EDA concentration in the slurry because of the presence of R-NH3+, that is, a higher EDA concentration resulted in a higher degree of slurry adsorption. In addition, during CMP, the chemical decomposition degree of the PI-film-surface was principally determined by the EDA concentration; that is, the degree of chemical composition was increased noticeably and linearly with the EDA concentration. Thus, the polishing-rate of the PI-film-surface increased notably with the EDA concentration in the CMP slurry.

Correlation with the Microstructure and Synergistic Physiochemical Etching Resistance of Nanocomposites under Fluorine-Containing Plasma Conditions.

In the semiconductor fabrication industry, high-power plasma is indispensable to obtain a high aspect ratio of chips. For applications to ceramic components including the dielectric window and ring in the semiconductor etching chamber, the Y2O3 ceramics have attracted interest recently based on excellent erosion resistance. When a high bias voltage is applied in a plasma environment containing fluorine gas, both chemical etching and ion bombardment act simultaneously on the ceramic components. During this etching process, severe erosion and particles generated on the ceramic surface can have effects on overall equipment effectiveness. Herein, we report the outstanding plasma etching resistance of Y2O3-MgO nanocomposite ceramics under a CF4/Ar/O2 gas atmosphere; the erosion depth of this material is 40-79% of that of the reference materials, Y2O3 ceramics. In a robust approach involving effective control of the microstructure with different initial particles and sintering conditions, it is possible to understand the relationship between etching behavior and microstructure evolution of the nanocomposite ceramic. The results indicate that the nanocomposite with fine and homogeneous domain distribution can decrease particle generation and ameliorate its life cycle; accordingly, this is a promising alternative candidate material for ceramic components in plasma chambers.

Super fine cerium hydroxide abrasives for SiO2 film chemical mechanical planarization performing scratch free.

Face-centered-cubic crystallized super-fine (~ 2 nm in size) wet-ceria-abrasives are synthesized using a novel wet precipitation process that comprises a Ce4+ precursor, C3H4N2 catalyst, and NaOH titrant for a synthesized termination process at temperature of at temperature of 25 °C. This process overcomes the limitations of chemical-mechanical-planarization (CMP)-induced scratches from conventional dry ceria abrasives with irregular surfaces or wet ceria abrasives with crystalline facets in nanoscale semiconductor devices. The chemical composition of super-fine wet ceria abrasives depends on the synthesis termination pH, that is, Ce(OH)4 abrasives at a pH of 4.0-5.0 and a mixture of CeO2 and Ce(OH)4 abrasives at a pH of 5.5-6.5. The Ce(OH)4 abrasives demonstrate better abrasive stability in the SiO2-film CMP slurry than the CeO2 abrasives and produce a minimum abrasive zeta potential (~ 12 mV) and a minimum secondary abrasive size (~ 130 nm) at the synthesis termination pH of 5.0. Additionally, the abrasive stability of the SiO2-film CMP slurry that includes super-fine wet ceria abrasives is notably sensitive to the CMP slurry pH; the best abrasive stability (i.e., a minimum secondary abrasive size of ~ 130 nm) is observed at a specific pH (6.0). As a result, a maximum SiO2-film polishing rate (~ 524 nm/min) is achieved at pH 6.0, and the surface is free of stick-and-slip type scratches.