RESUMEN
Understanding the mutual interaction between electronic excitations and lattice vibrations is key for understanding electronic transport and optoelectronic phenomena. Dynamic manipulation of such interaction is elusive because it requires varying the material composition on the atomic level. In turn, recent studies on topological insulators (TIs) have revealed the coexistence of a strong phonon resonance and topologically protected Dirac plasmon, both in the terahertz (THz) frequency range. Here, using these intrinsic characteristics of TIs, we demonstrate a new methodology for controlling electron-phonon interaction by lithographically engineered Dirac surface plasmons in the Bi2Se3 TI. Through a series of time-domain and time-resolved ultrafast THz measurements, we show that, when the Dirac plasmon energy is less than the TI phonon energy, the electron-phonon coupling is trivial, exhibiting phonon broadening associated with Landau damping. In contrast, when the Dirac plasmon energy exceeds that of the phonon resonance, we observe suppressed electron-phonon interaction leading to unexpected phonon stiffening. Time-dependent analysis of the Dirac plasmon behavior, phonon broadening, and phonon stiffening reveals a transition between the distinct dynamics corresponding to the two regimes as the Dirac plasmon resonance moves across the TI phonon resonance, which demonstrates the capability of Dirac plasmon control. Our results suggest that the engineering of Dirac plasmons provides a new alternative for controlling the dynamic interaction between Dirac carriers and phonons.
RESUMEN
Collective oscillations of massless particles in two-dimensional (2D) Dirac materials offer an innovative route toward implementing atomically thin devices based on low-energy quasiparticle interactions. Strong confinement of near-field distribution on the 2D surface is essential to demonstrate extraordinary optoelectronic functions, providing means to shape the spectral response at the mid-infrared (IR) wavelength. Although the dynamic polarization from the linear response theory has successfully accounted for a range of experimental observations, a unified perspective was still elusive, connecting the state-of-the-art developments based on the 2D Dirac plasmon-polaritons. Here, we review recent works on graphene and three-dimensional (3D) topological insulator (TI) plasmon-polariton, where the mid-IR and terahertz (THz) radiation experiences prominent confinement into a deep-subwavelength scale in a novel optoelectronic structure. After presenting general light-matter interactions between 2D Dirac plasmon and subwavelength quasiparticle excitations, we introduce various experimental techniques to couple the plasmon-polaritons with electromagnetic radiations. Electrical and optical controls over the plasmonic excitations reveal the hybridized plasmon modes in graphene and 3D TI, demonstrating an intense near-field interaction of 2D Dirac plasmon within the highly-compressed volume. These findings can further be applied to invent optoelectronic bio-molecular sensors, atomically thin photodetectors, and laser-driven light sources.
RESUMEN
Active control of metamaterial properties is critical for advanced terahertz (THz) applications. However, the tunability of THz properties, such as the resonance frequency and phase of the wave, remains challenging. Here, a new device design is provided for extensively tuning the resonance properties of THz metamaterials. Unlike previous approaches, the design is intended to control the electrical interconnections between the metallic unit structures of metamaterials. This strategy is referred to as the molecularization of the meta-atoms and is accomplished by placing graphene bridges between the metallic unit structures whose conductivity is modulated by an electrolyte gating. Because of the scalable nature of the molecularization, the resonance frequency of the terahertz metamaterials can be tuned as a function of the number of meta-atoms constituting a unit metamolecule. At the same time, the voltage-controlled molecularization allows delicate control over the phase shift of the transmitted THz, without changing the high transmission of the materials significantly.
RESUMEN
Despite the ubiquitous nature of the Peltier effect in low-dimensional thermoelectric devices, the influence of finite temperature on the electronic structure and transport in the Dirac heterointerfaces of the few-layer graphene and layered tetradymite, Sb2Te3 (which coincidently have excellent thermoelectric properties) are not well understood. In this work, using the first-principles density-functional theory calculations, we investigate the detailed atomic and electronic structure of these Dirac heterointerfaces of graphene and Sb2Te3 and further re-examine the effect of finite temperature on the electronic band structures using a phenomenological temperature-broadening model based on Fermi-Dirac statistics. We then proceed to understand the underlying charge redistribution process in this Dirac heterointerfaces and through solving the Boltzmann transport equation, we present the theoretical evidence of electron-hole asymmetry in its electrical conductivity as a consequence of this charge redistribution mechanism. We finally propose that the hexagonal-stacked Dirac heterointerfaces are useful as efficient p-n junction building blocks in the next-generation thermoelectric devices where the electron-hole asymmetry promotes the thermoelectric transport by "hot" excited charge carriers.
RESUMEN
The first experimental demonstration of nonlinear terahertz difference-frequency generation in a hybrid graphene metadevice is reported. Decades of research have revealed that terahertz-wave generation is impossible in single-layer graphene. This limitation is overcome and nonlinear terahertz generation by ultra-short optical pulse injection is demonstrated. This device is an essential step toward atomically thin, nonlinear terahertz optoelectronic components.
RESUMEN
Recently metamaterials have inspired worldwide researches due to their exotic properties in transmitting, reflecting, absorbing or refracting specific electromagnetic waves. Most metamaterials are known to have anisotropic properties, but existing anisotropy models are applicable only to a single meta-atom and its properties. Here we propose an anisotropy model for asymmetrical meta-atom clusters and their polarization dependency. The proposed anisotropic meta-atom clusters show a unique resonance property in which their frequencies can be altered for parallel polarization, but fixed to a single resonance frequency for perpendicular polarization. The proposed anisotropic metamaterials are expected to pave the way for novel optical systems.
RESUMEN
Photoexcited carrier relaxation is a recurring topic in understanding the transient conductivity dynamics of graphene-based devices. For atomically thin graphene oxide (GO), a simple free-carrier Drude response is expected to govern the terahertz (THz) conductivity dynamics--same dynamics observed in conventional CVD-grown graphene. However, to date, no experimental testimony has been provided on the origin of photoinduced conductivity increase in GO. Here, using ultrafast THz spectroscopy, we show that the photoexcited carrier relaxation in GO exhibits a peculiar non-Drude behavior. Unlike graphene, the THz dynamics of GO show percolation behaviors: as the annealing temperature increases, transient THz conductivity rapidly increases and the associated carrier relaxation changes from mono- to biexponential decay. After saturating the recombination decay through defect trapping, a new ultrafast decay channel characterized by multiparticle Auger scattering is observed whose threshold pump fluence is found to be 50 µJ/cm2. The increased conductivity is rapidly suppressed within 1 ps due to the Auger recombination, and non-Drude THz absorptions are subsequently emerged as a result of the defect-trapped high-frequency oscillators.