Transparent (Ni,Au)/ZnO:Al-Based Ohmic Contacts to p-Type GaN as an Insight into the Role of Ni and Au in Standard p-Type GaN Contacts.

In this work, Ni/ZnO:Al and Au/ZnO:Al structures are proposed as efficient ohmic contacts to p-GaN. Through a careful selection of deposition parameters and annealing environment, we not only achieve the formation of high-quality ohmic contacts but also gain insights into the interfacial reactions, enhancing the understanding of conventional Ni/Au contact formation on p-GaN. In particular, the notion that the presence of NiO at the interface is enough for an ohmic contact to form is challenged by showing that in fact it has to be NiO formed at the interface from metallic Ni and additional oxygen. An Au-based ohmic contact is also presented, and its formation mechanism is explained, contrary to popular knowledge that Au does not form an ohmic contact with p-GaN. The obtained contacts are low resistivity, with contact resistances of 4.77 × 10-3 Ω·cm2 and 3.34 × 10-3 Ω·cm2 for Au-based and Ni-based ones, respectively. What is also important is that we show these oxide-based contacts with metallic interlayers give lower series resistances in simplified diode structures than a standard Ni/Au-based contact, making them promising for optoelectronic devices.

Pros and Cons of (NH4)2S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode.

The impact of wet treatment using an (NH4)2S-alcohol solution on the interface state of the p-GaN/Ni/Au/Pt contact system and laser diode processing was investigated. Sulfur wet cleaning resulted in reduced surface roughness and contact resistivity. The lowest specific contact resistance (ρc < 1 × 10-4 Ω·cm2) was achieved with samples treated with an (NH4)2S-isopropanol solution, whereas the highest resistivity (ρc = 3.3 × 10-4 Ω·cm2) and surface roughness (Ra = 16 nm) were observed in samples prepared by standard methods. Annealing the contact system in an N2 + O2 + H2O atmosphere caused degradation through species inter-diffusion and metal-metal solid solution formation, irrespective of the preparation method. Standard prepared substrates developed a thin GaN-Au intermediate layer at the interface after heat treatment. Enhanced adhesion and the absence of GaN decomposition were observed in samples additionally cleaned with the (NH4)2S-solvent solution. Complete oxidation of nickel to NiO was observed in samples that underwent additional sulfur solution treatment. The intensity of metal species mixing and nickel oxidation was influenced by the metal diffusion rate and was affected by the initial state of the GaN substrate obtained through different wet treatment methods.

Ohmic Contact to n-GaN Using RT-Sputtered GaN:O.

One of the key issues in GaN-based devices is the resistivity and technology of ohmic contacts to n-type GaN. This work presents, for the first time, effective intentional oxygen doping of sputtered GaN films to obtain highly conductive n+-GaN:O films. We have developed a novel and simple method to obtain these films. The method is based on the room temperature magnetron sputtering of a single crystal bulk GaN target doped with oxygen. The n+-GaN:O films exhibit a polycrystalline structure with a crack-free surface and a free electron concentration of 7.4 × 1018 cm3. Ohmic contact to GaN:Si with n+-GaN:O sub-contact layer achieves specific contact resistance of the order of 10-5 Ωcm2 after thermal treatment. The obtained results are very promising for the development of the technology of a whole new class of ohmic contacts to n-GaN.

Palladium-Based Contacts on p-GaN and Their Application in Laser Diodes.

In this paper, we investigate the effect of Pd thickness and heat treatment on Pd/Ni/Au/p-GaN metal contacts. The as-deposited samples exhibit a smooth morphology and non-linear I-V characteristics. Heat treatment in a N2 atmosphere leads to degradation of the contact microstructure, resulting in diffusion of Ga, void formation on the interface and mixing of metals. Annealing in a mixture of N2 and O2 improves adhesion and reduces contact resistance. However, this process also induces GaN decomposition and species mixing. The mixing of metal-Ga and metal-metal remains unaffected by the method of thermal treatment but depends on gas composition for thin Pd contacts. To achieve low-resistance contacts (≈1 × 10-4 Ω cm2), we found that increasing the Pd thickness and using N2 + O2 as the annealing environment are effective measures. Nevertheless, the degradation effect of the annealed contact microstructure in the form of the void generation becomes evident as the thickness of Pd increases. Laser diodes (LDs) with optimized palladium-based contacts operate at a voltage of 4.1 V and a current density of 3.3 kA/cm².

InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications.

The main objective of this work is to demonstrate and validate the feasibility of fabricating (Al, In) GaN laser diodes with etched facets. The facets are fabricated using a two-step dry and wet etching process: inductively coupled plasma-reactive ion etching in chlorine, followed by wet etching in tetramethylammonium hydroxide (TMAH). For the dry etching stage, an optimized procedure was used. For the wet etching step, the TMAH temperature was set to a constant value of 80 °C, and the only variable parameter was time. The time was divided into individual steps, each of 20 min. To validate the results, electro-optical parameters were measured after each step and compared with a cleaved reference, as well as with scanning electron microscope imaging of the front surface. It was determined that the optimal wet etching time was 40 min. For this time, the laser tested achieved a fully comparable threshold current (within 10%) with the cleaved reference. The described technology is an important step for the future manufacturing of photonic integrated circuits with laser diodes integrated on a chip and for ultra-short-cavity lasers.

Oxidation of MBE-Grown ZnTe and ZnTe/Zn Nanowires and Their Structural Properties.

Results of comparative structural characterization of bare and Zn-covered ZnTe nanowires (NWs) before and after thermal oxidation at 300 °C are presented. Scanning electron microscopy, energy-dispersive X-ray spectroscopy, high-resolution transmission electron microscopy, and Raman scattering not only unambiguously confirm the conversion of the outer layer of the NWs into ZnO, but also demonstrate the influence of the oxidation process on the structure of the inner part of the NWs. Our study shows that the morphology of the resulting ZnO can be improved by the deposition of thin Zn shells on the bare ZnTe NWs prior to the oxidation. The oxidation of bare ZnTe NWs results in the formation of separated ZnO nanocrystals which decorate crystalline Te cores of the NWs. In the case of Zn-covered NWs, uniform ZnO shells are formed, however they are of a fine-crystalline structure or partially amorphous. Our study provides an important insight into the details of the oxidation processes of ZnTe nanostructures, which could be of importance for the preparation and performance of ZnTe based nano-devices operating under normal atmospheric conditions and at elevated temperatures.

Multilayer metal/metal-oxide diffractive structure for photonic temperature sensing.

We designed and fabricated multilayer metal/metal-oxide surface relief diffractive grating structures by growing alternating Pt and SnO(x) layers. Optical interrogation at 633 nm reveals the temperature dependence of their reflection and transmission diffractive effects. This function is explored here in the context of a remote, spatially localized, photonic temperature sensing operation, achieving sensitivity of 10% per °C for the zeroth-order in the transmission mode. The experimental demonstration is found to be in good agreement with the results of rigorous coupled wave analysis of the composite metal/metal-oxide element.

Determination of thermal conductivity of thin layers used as transparent contacts and antireflection coatings with a photothermal method.

A photothermal experiment with mirage detection was used to determine the thermal conductivity of various thin films deposited on semiconductor substrates. The first type consisted of conducting oxide films: ZnO and CdO deposited on GaSb:Te, while the other contained high dielectric constant HfO(2) layers on Si. All films were fabricated using a magnetron sputtering technique. Experimental results showed that the value of the thermal conductivity of ZnO and CdO films is lower than the value obtained for HfO(2). Thermal conductivities of investigated thin films are about 2 orders of magnitude lower than those corresponding to bulk materials.

Surface Properties of Nanostructured, Porous ZnO Thin Films Prepared by Direct Current Reactive Magnetron Sputtering.

In this paper, the results of detailed X-ray photoelectron spectroscopy (XPS) studies combined with atomic force microscopy (AFM) investigation concerning the local surface chemistry and morphology of nanostructured ZnO thin films are presented. They have been deposited by direct current (DC) reactive magnetron sputtering under variable absolute Ar/O2 flows (in sccm): 3:0.3; 8:0.8; 10:1; 15:1.5; 20:2, and 30:3, respectively. The XPS studies allowed us to obtain the information on: (1) the relative concentrations of main elements related to their surface nonstoichiometry; (2) the existence of undesired C surface contaminations; and (3) the various forms of surface bondings. It was found that only for the nanostructured ZnO thin films, deposited under extremely different conditions, i.e., for Ar/O2 flow ratio equal to 3:0.3 and 30:3 (in sccm), respectively, an evident and the most pronounced difference had been observed. The same was for the case of AFM experiments. What is crucial, our experiments allowed us to find the correlation mainly between the lowest level of C contaminations and the local surface morphology of nanostructured ZnO thin films obtained at the highest Ar/O2 ratio (30:3), for which the densely packaged (agglomerated) nanograins were observed, yielding a smaller surface area for undesired C adsorption. The obtained information can help in understanding the reason of still rather poor gas sensor characteristics of ZnO based nanostructures including the undesired ageing effect, being of a serious barrier for their potential application in the development of novel gas sensor devices.

AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts.

AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobility transistor (HEMT) structures was solved. The maximum output current was about 1 A/mm and contact resistances was in the range of 0.3⁻0.6 Ω ·mm. Good microwave performance was obtained due to the absence of parasitic elements such as high access resistance.

Optical characterizations of ZnO, SnO2, and TiO2 thin films for butane detection.

The optogeometric properties of various sensitive thin films involved in gas sensing applications are investigated by using the m-line technique and atomic force microscopy. Variations of these optical properties are studied under butane and ozone exposure.