Your browser doesn't support javascript.
loading
Mostrar: 20 | 50 | 100
Resultados 1 - 5 de 5
Filtrar
Más filtros

Banco de datos
Tipo de estudio
Tipo del documento
País de afiliación
Intervalo de año de publicación
1.
Small ; : e2305117, 2023 Nov 14.
Artículo en Inglés | MEDLINE | ID: mdl-37963822

RESUMEN

The icosahedral closo dodecaborate cluster [B12 H12 ]2- is gaining increasing interest due to its unique properties including the ease of functionalization, 3D aromaticity, and formation of metal salts with high ion conductivity. In this work, simple and effective preparation of silver closo dodecaborte (Ag2 B12 H12 ) films is reported by an electrochemical route. The size of the Ag2 B12 H12 particles in the films can be tuned from nanometers to micrometers by varying the electrochemical parameters. Ag nanoclusters with controllable sizes are successfully generated via electrochemical reduction reactions or thermal anneal of the Ag2 B12 H12 films. When tested for hydrogen evolution reaction (HER) in an acidic solution, the as-prepared Ag nanoparticles deliver a current density of 10 mA cm-2 at 376 mV overpotential. This research sheds light on a new synthesis of [B12 H12 ]2- based thin films, the generation of metal nano-powders, and their application in HER or other applications.

2.
Adv Mater ; 29(4)2017 Jan.
Artículo en Inglés | MEDLINE | ID: mdl-27874217

RESUMEN

Outstanding protection of Cu by high-quality boron nitride nanofilm (BNNF) 1-2 atomic layers thick in salt water is observed, while defective BNNF accelerates the reaction of Cu toward water. The chemical stability, insulating nature, and impermeability of ions through the BN hexagons render BNNF a great choice for atomic-scale protection.

3.
Nanoscale ; 8(35): 15926-33, 2016 Sep 21.
Artículo en Inglés | MEDLINE | ID: mdl-27455464

RESUMEN

The quality of hexagonal boron nitride nanosheets (h-BNNS) is often associated with the most visible aspects such as lateral size and thickness. Less obvious factors such as sheet stacking order could also have a dramatic impact on the properties of BNNS and therefore its applications. The stacking order can be affected by contamination, cracks, and growth temperatures. In view of the significance of chemical-vapour-decomposition (CVD) assisted growth of BNNS, this paper reports on strategies to grow carbon- and crack-free BNNS by CVD and describes the stacking order of the resultant BNNS. Pretreatment of the most commonly used precursor, ammonia borane, is necessary to remove carbon contamination caused by residual hydrocarbons. Flattening the Cu and W substrates prior to growth and slow cooling around the Cu melting point effectively facilitate the uniform growth of h-BNNS, as a result of a minimal temperature gradient across the Cu substrate. Confining the growth inside alumina boats effectively minimizes etching of the nanosheet by silica nanoparticles originating from the commonly used quartz reactor tube. h-BNNS grown on solid Cu surfaces using this method adopt AB, ABA, AC', and AC'B stacking orders, which are known to have higher energies than the most stable AA' configuration. These findings identify a pathway for the fabrication of high-quality h-BNNS via CVD and should spur studies on stacking order-dependent properties of h-BNNS.

4.
Sci Rep ; 5: 7743, 2015 Jan 13.
Artículo en Inglés | MEDLINE | ID: mdl-25582557

RESUMEN

Hexagonal boron nitride nanosheets (h-BNNS) have been proposed as an ideal substrate for graphene-based electronic devices, but the synthesis of large and homogeneous h-BNNS is still challenging. In this contribution, we report a facile synthesis of few-layer h-BNNS on melted copper via an atmospheric pressure chemical vapor deposition process. Comparative studies confirm the advantage of using melted copper over solid copper as a catalyst substrate. The former leads to the formation of single crystalline h-BNNS that is several microns in size and mostly in mono- and bi-layer forms, in contrast to the polycrystalline and mixed multiple layers (1-10) yielded by the latter. This difference is likely to be due to the significantly reduced and uniformly distributed nucleation sites on the smooth melted surface, in contrast to the large amounts of unevenly distributed nucleation sites that are associated with grain boundaries and other defects on the solid surface. This synthesis is expected to contribute to the development of large-scale manufacturing of h-BNNS/graphene-based electronics.

SELECCIÓN DE REFERENCIAS
DETALLE DE LA BÚSQUEDA