Programmable Threshold Logic Implementations in a Memristor Crossbar Array.

In this study, we demonstrate the implementation of programmable threshold logics using a 32 × 32 memristor crossbar array. Thanks to forming-free characteristics obtained by the annealing process, its accurate programming characteristics are presented by a 256-level grayscale image. By simultaneous subtraction between weighted sum and threshold values with a differential pair in an opposite way, 3-input and 4-input Boolean logics are implemented in the crossbar without additional reference bias. Also, we verify a full-adder circuit and analyze its fidelity, depending on the device programming accuracy. Lastly, we successfully implement a 4-bit ripple carry adder in the crossbar and achieve reliable operations by read-based logic operations. Compared to stateful logic driven by device switching, a 4-bit ripple carry adder on a memristor crossbar array can perform more reliably in fewer steps thanks to its read-based parallel logic operation.

Intrinsic variation effect in memristive neural network with weight quantization.

To analyze the effect of the intrinsic variations of the memristor device on the neuromorphic system, we fabricated 32 × 32 Al2O3/TiOx-based memristor crossbar array and implemented 3 bit multilevel conductance as weight quantization by utilizing the switching characteristics to minimize the performance degradation of the neural network. The tuning operation for 8 weight levels was confirmed with a tolerance of ±4µA (±40µS). The endurance and retention characteristics were also verified, and the random telegraph noise (RTN) characteristics were measured according to the weight range to evaluate the internal stochastic variation effect. Subsequently, a memristive neural network was constructed by off-chip training with differential memristor pairs for the Modified National Institute of Standards and Technology (MNIST) handwritten dataset. The pre-trained weights were quantized, and the classification accuracy was evaluated by applying the intrinsic variations to each quantized weight. The intrinsic variations were applied using the measured weight inaccuracy given by the tuning tolerance, RTN characteristics, and the fault device yield. We believe these results should be considered when the pre-trained weights are transferred to a memristive neural network by off-chip training.

3-bit multilevel operation with accurate programming scheme in TiOx/Al2O3memristor crossbar array for quantized neuromorphic system.

As interest in artificial intelligence (AI) and relevant hardware technologies has been developed rapidly, algorithms and network structures have become significantly complicated, causing serious power consumption issues because an enormous amount of computation is required. Neuromorphic computing, a hardware AI technology with memory devices, has emerged to solve this problem. For this application, multilevel operations of synaptic devices are important to imitate floating point weight values in software AI technologies. Furthermore, weight transfer methods to desired weight targets must be arranged for off-chip training. From this point of view, we fabricate 32 × 32 memristor crossbar array and verify the 3-bit multilevel operations. The programming accuracy is verified for 3-bit quantized levels by applying a reset-voltage-control programming scheme to the fabricated TiOx/Al2O3-based memristor array. After that, a synapse composed of two differential memristors and a fully-connected neural network for modified national institute of standards and technology (MNIST) pattern recognition are constructed. The trained weights are post-training quantized in consideration of the 3-bit characteristics of the memristor. Finally, the effect of programming error on classification accuracy is verified based on the measured data, and we obtained 98.12% classification accuracy for MNIST data with the programming accuracy of 1.79% root-mean-square-error. These results imply that the proposed reset-voltage-control programming scheme can be utilized for a precise tuning, and expected to contribute for the development of a neuromorphic system capable of highly precise weight transfer.

Analytically and empirically consistent characterization of the resistive switching mechanism in a Ag conducting-bridge random-access memory device through a pseudo-liquid interpretation approach.

A new physical analysis of the filament formation in a Ag conducting-bridge random-access memory (CBRAM) device in consideration of the existence of inter-atomic attractions caused by metal bonding is suggested. The movement of Ag atoms inside the switching layer is characterized hydrodynamically using the Young-Laplace equation during set and reset operations. Both meridional and azimuthal curvatures of the Ag filament protruding from the Ag electrode are accurately calculated to track down the exact shape of the Ag filament with change in the applied voltage. The second-order partial differential equation for the Ag filament geometry is derived from the equation of equilibrium between the electrostatic pressure and the Laplace one. The solution to the equation is numerically obtained, and furthermore, the abrupt set operation in the forming process, bipolar resistive-switching, and the threshold switching operation in the reset operations are successfully simulated in accordance with the numerical solutions. Also, it is demonstrated that the currents extracted from the suggested model show good agreement with the I-V characteristics measured from the fabricated Ag CBRAM device.

Effects of mobile phone usage on sperm quality - No time-dependent relationship on usage: A systematic review and updated meta-analysis.

BACKGROUND: Mobile phones emit radiofrequency (RF) electromagnetic waves (EMWs), a low-level RF that can be absorbed by the human body and exert potential adverse effects on the brain, heart, endocrine system, and reproductive function. Owing to the novel findings of numerous studies published since 2012 regarding the effect of mobile phone use on sperm quality, we conducted a systematic review and updated meta-analysis to determine whether the exposure to RF-EMWs affects human sperm quality. METHODS: This study was conducted in accordance with the PRISMA guidelines. The outcome measures depicting sperm quality were motility, viability, and concentration, which are the most frequently used parameters in clinical settings to assess fertility. RESULTS: We evaluated 18 studies that included 4280 samples. Exposure to mobile phones is associated with reduced sperm motility, viability, and concentration. The decrease in sperm quality after RF-EMW exposure was not significant, even when the mobile phone usage increased. This finding was consistent across experimental in vitro and observational in vivo studies. DISCUSSION: Accumulated data from in vivo studies show that mobile phone usage is harmful to sperm quality. Additional studies are needed to determine the effect of the exposure to EMWs from new mobile phone models used in the present digital environment.

Performance Validation of a Planar Hall Resistance Biosensor through Beta-Amyloid Biomarker.

Magnetic sensors have great potential for biomedical applications, particularly, detection of magnetically-labeled biomolecules and cells. On the basis of the advantage of the planar Hall effect sensor, which consists of improved thermal stability as compared with other magnetic sensors, we have designed a portable biosensor platform that can detect magnetic labels without applying any external magnetic field. The trilayer sensor, with a composition of Ta (5 nm)/NiFe (10 nm)/Cu (x = 0 nm~1.2 nm)/IrMn (10 nm)/Ta (5 nm), was deposited on a silicon wafer using photolithography and a sputtering system, where the optimized sensor sensitivity was 6 µV/(Oe∙mA). The detection of the magnetic label was done by comparing the signals obtained in first harmonic AC mode (1f mode) using an external magnetic field and in the second harmonic AC mode (2f mode) with a self-field generated by current passing through the sensor. In addition, a technique for the ß-amyloid biomarker-based antibody-antigen sandwich model was demonstrated for the detection of a series of concentrations of magnetic labels using the self-field mode method, where the signal-to-noise ratio (SNR) was high. The generated self-field was enough to detect an immobilized magnetic tag without an additional external magnetic field. Hence, it could be possible to reduce the device size to use the point-of-care testing using a portable circuit system.

Electrical, Optical and Electrochemical Corrosion Resistance of AZO, GZO, AGZO Films Depending on the Hydrogen Content.

Zinc oxide (ZnO) is a commonly used material for the front contact layer of thin film solar cells based on chalcopyrite CuInGaSe2 (CIGS), since it satisfies the optical and electrical properties with low cost and is abundantly available. For high-performance, the front contact electrode in the CIGS solar cell should have low resistivity and high transmittance. Hence, efforts to improve ZnO's electrical and optical properties have been widely carried out. The corrosion resistance of the front contact film, however, has not been studied well. So, this paper compared the electrochemical stability of ZnO based transparent conducting oxide (TCO) films such as aluminum zinc oxide (AZO), gallium zinc oxide (GZO) and aluminum gallium zinc oxide (AGZO) grown in H2. All films predominately grew in the (002) c-axis direction and their crystallites improved with increasing H2 ratio, reflecting the enhanced electrical properties. Hydrogen acts as a shallow donor in the n-type ZnO semiconductor and increases carrier densities by forming oxygen vacancies by combining with oxygen molecules to form OH- functionalities. The electrochemical corrosion resistance of prepared films showed a linear improvement with increasing hydrogen. This change was attributed to the grain morphology and size and resulting grain boundaries. Since corrosion occurs mainly at grain boundaries, corrosion resistance seems to be better with a lower density of grain boundaries, due to larger grains caused by hydrogen. Electric conductivity was better in the order of GZO > AGZO > AZO, while corrosion resistance was in the reverse order. By adding hydrogen, the electrical resistivity of AGZO improved to near GZO, and the corrosion resistance was also enhanced to near AZO.

The Cancer Cell Line Encyclopedia enables predictive modelling of anticancer drug sensitivity.

The systematic translation of cancer genomic data into knowledge of tumour biology and therapeutic possibilities remains challenging. Such efforts should be greatly aided by robust preclinical model systems that reflect the genomic diversity of human cancers and for which detailed genetic and pharmacological annotation is available. Here we describe the Cancer Cell Line Encyclopedia (CCLE): a compilation of gene expression, chromosomal copy number and massively parallel sequencing data from 947 human cancer cell lines. When coupled with pharmacological profiles for 24 anticancer drugs across 479 of the cell lines, this collection allowed identification of genetic, lineage, and gene-expression-based predictors of drug sensitivity. In addition to known predictors, we found that plasma cell lineage correlated with sensitivity to IGF1 receptor inhibitors; AHR expression was associated with MEK inhibitor efficacy in NRAS-mutant lines; and SLFN11 expression predicted sensitivity to topoisomerase inhibitors. Together, our results indicate that large, annotated cell-line collections may help to enable preclinical stratification schemata for anticancer agents. The generation of genetic predictions of drug response in the preclinical setting and their incorporation into cancer clinical trial design could speed the emergence of 'personalized' therapeutic regimens.

Does Bowstringing Affect Hand Function in Patients Treated With A1 Pulley Release for Trigger Fingers?: Comparison Between Percutaneous Versus Open Technique.

We aimed to inspect bowstringing after percutaneous and open release of the A1 pulley for trigger digits and its influence on hand function. Sixty-two patients with a resistant trigger digit were randomized to undergo either open release or percutaneous release of the A1 pulley. We quantified bowstringing of the digit using ultrasonography preoperatively and at 12 and 24 weeks after surgery. Pain on a visual analog scale; Disabilities of the Arm, Shoulder, and Hand questionnaire; pinch power; and grip strength were assessed. Bowstringing was significantly increased at 12 weeks after surgery in both groups, and the mean value of the open release group was significantly greater than that of the percutaneous group (2.30 ± 0.58 mm vs 1.46 ± 0.51 mm, respectively; P = 0.035). However, the bowstringing was decreased at 24 weeks without showing significant difference between the 2 groups. The clinical outcomes of each cohort improved significantly, with no difference between the groups at final follow-up. No association was found between bowstringing and any clinical outcome measure. Bowstringing occurred by A1 pulley release with either the percutaneous or open technique does not affect clinical hand function in patients with trigger fingers.

InGaN/GaN light-emitting diode having direct hole injection plugs and its high-current operation.

The light-emitting diode (LED) with an improved hole injection and straightforward process integration is proposed. p-type GaN direct hole injection plugs (DHIPs) are formed on locally etched multiple-quantum wells (MQWs) by epitaxial lateral overgrowth (ELO) method. We confirm that the optical output power is increased up to 23.2% at an operating current density of 100 A/cm2. Furthermore, in order to identify the origin of improvement in optical performance, the transient light decay time and light intensity distribution characteristics were analyzed on the DHIP LED devices. Through the calculation of the electroluminescence (EL) decay time, internal quantum efficiency (IQE) is extracted along with the recombination parameters, which reveals that the DHIPs have a significant effect on enhancement of radiative recombination and reduction of efficiency droop. Furthermore, the mapping PL reveals that the DHIP LED also has a potential to improve the light extraction efficiency by hexagonal pyramid shaped DHIPs.

Co-catalytic Effects of CoS2 on the Activity of the MoS2 Catalyst for Electrochemical Hydrogen Evolution.

MoS2 is a promising material to replace the Pt catalyst in the electrochemical hydrogen evolution reaction (HER). It is well known that the activity of the MoS2 catalyst in the HER is significantly promoted by doping cobalt atoms. Recently, the Co-Mo-S phase, in which cobalt atoms decorate the edge positions of the MoS2 slabs, has been identified as a co-catalytic phase in the Co-doped MoS2 (Co-MoSx) with low Co content. Here, we report the effect of the incorporation of cobalt atoms in the chemical state of the Co-MoSx catalyst, which gives rise to the co-catalytic effect. Co-MoSx catalysts with various Co contents were prepared on carbon fiber paper by a simple hydrothermal process. On the Co-MoSx catalyst with high Co content (Co/Mo ≈ 2.3), a dramatically higher catalytic activity was observed compared to that for the catalyst with low Co content (Co/Mo ≈ 0.36). Furthermore, the co-catalytic phase in the Co-MoSx catalyst with the high Co content was found not to be the Co-Mo-S phase but was identified as CoS2 by Raman spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and transmission electron microscopy. It is believed that CoS2 is an alternative choice to co-catalyze HER on MoS2-based catalysts.

Design and synthesis of novel selective anaplastic lymphoma kinase inhibitors.

Anaplastic lymphoma kinase (ALK) is a receptor tyrosine kinase belonging to the insulin receptor superfamily. Expression of ALK in normal human tissues is only found in a subset of neural cells, however it is involved in the genesis of several cancers through genetic aberrations involving translocation of the kinase domain with multiple fusion partners (e.g., NPM-ALK in anaplastic large cell lymphoma ALCL or EML4-ALK in non-small cell lung cancer) or activating mutations in the full-length receptor resulting in ligand-independent constitutive activation (e.g., neuroblastoma). Here we are reporting the discovery of novel and selective anaplastic lymphoma kinase inhibitors from specific modifications of the 2,4-diaminopyridine core present in TAE684 and LDK378. Synthesis, structure activity relationships (SAR), absorption, distribution, metabolism, and excretion (ADME) profile, and in vivo efficacy in a mouse xenograft model of anaplastic large cell lymphoma are described.

COT drives resistance to RAF inhibition through MAP kinase pathway reactivation.

Oncogenic mutations in the serine/threonine kinase B-RAF (also known as BRAF) are found in 50-70% of malignant melanomas. Pre-clinical studies have demonstrated that the B-RAF(V600E) mutation predicts a dependency on the mitogen-activated protein kinase (MAPK) signalling cascade in melanoma-an observation that has been validated by the success of RAF and MEK inhibitors in clinical trials. However, clinical responses to targeted anticancer therapeutics are frequently confounded by de novo or acquired resistance. Identification of resistance mechanisms in a manner that elucidates alternative 'druggable' targets may inform effective long-term treatment strategies. Here we expressed ∼600 kinase and kinase-related open reading frames (ORFs) in parallel to interrogate resistance to a selective RAF kinase inhibitor. We identified MAP3K8 (the gene encoding COT/Tpl2) as a MAPK pathway agonist that drives resistance to RAF inhibition in B-RAF(V600E) cell lines. COT activates ERK primarily through MEK-dependent mechanisms that do not require RAF signalling. Moreover, COT expression is associated with de novo resistance in B-RAF(V600E) cultured cell lines and acquired resistance in melanoma cells and tissue obtained from relapsing patients following treatment with MEK or RAF inhibitors. We further identify combinatorial MAPK pathway inhibition or targeting of COT kinase activity as possible therapeutic strategies for reducing MAPK pathway activation in this setting. Together, these results provide new insights into resistance mechanisms involving the MAPK pathway and articulate an integrative approach through which high-throughput functional screens may inform the development of novel therapeutic strategies.

Realization of Multiple Synapse Plasticity by Coexistence of Volatile and Nonvolatile Characteristics of Interface Type Memristor.

Studies on neuromorphic computing systems are becoming increasingly important in the big-data-processing era as these systems are capable of energy-efficient parallel data processing and can overcome the present limitations owing to the von Neumann bottleneck. The Pt/WOx/ITO resistive random-access memory device can be used to implement versatile synapse functions because it possesses both volatile and nonvolatile characteristics. The gradual increase and decrease in the current of the Pt/WOx/ITO device with its uniform resistance state for endurance and retention enables additional synaptic applications that can be controlled using electric pulses. If the volatile and nonvolatile device properties are set through rehearsal and forgetting processes, the device can emulate various synaptic behaviors, such as potentiation and depression, paired-pulse facilitation, post-tetanic potentiation, image training, Hebbian learning rules, excitatory postsynaptic current, and Pavlov's test. Furthermore, reservoir computing can be implemented for applications such as pattern generation and recognition. This emphasizes the various applications of future neuromorphic devices, demonstrating the various favorable characteristics of pulse-enhanced Pt/WOx/ITO devices.

Threshold learning algorithm for memristive neural network with binary switching behavior.

On-chip learning is an effective method for adjusting artificial neural networks in neuromorphic computing systems by considering hardware intrinsic properties. However, it faces challenges due to hardware nonidealities, such as the nonlinearity of potentiation and depression and limitations on fine weight adjustment. In this study, we propose a threshold learning algorithm for a variation-tolerant ternary neural network in a memristor crossbar array. This algorithm utilizes two tightly separated resistance states in memristive devices to represent weight values. The high-resistance state (HRS) and low-resistance state (LRS) defined as read current of < 0.1 µA and > 1 µA, respectively, were successfully programmed in a 32 × 32 crossbar array, and exhibited half-normal distributions due to the programming method. To validate our approach experimentally, a 64 × 10 single-layer fully connected network were trained in the fabricated crossbar for an 8 × 8 MNIST dataset using the threshold learning algorithm, where the weight value is updated when a gradient determined by backpropagation exceeds a threshold value. Thanks to the large margin between the two states of the memristor, we observed only a 0.42 % drop in classification accuracy compared to the baseline network results. The threshold learning algorithm is expected to alleviate the programming burden and be utilized in variation-tolerant neuromorphic architectures.

Implementation of Convolutional Neural Networks in Memristor Crossbar Arrays with Binary Activation and Weight Quantization.

We propose a hardware-friendly architecture of a convolutional neural network using a 32 × 32 memristor crossbar array having an overshoot suppression layer. The gradual switching characteristics in both set and reset operations enable the implementation of a 3-bit multilevel operation in a whole array that can be utilized as 16 kernels. Moreover, a binary activation function mapped to the read voltage and ground is introduced to evaluate the result of training with a boundary of 0.5 and its estimated gradient. Additionally, we adopt a fixed kernel method, where inputs are sequentially applied to a crossbar array with a differential memristor pair scheme, reducing unused cell waste. The binary activation has robust characteristics against device state variations, and a neuron circuit is experimentally demonstrated on a customized breadboard. Thanks to the analogue switching characteristics of the memristor device, the accurate vector-matrix multiplication (VMM) operations can be experimentally demonstrated by combining sequential inputs and the weights obtained through tuning operations in the crossbar array. In addition, the feature images extracted by VMM during the hardware inference operations on 100 test samples are classified, and the classification performance by off-chip training is compared with the software results. Finally, inference results depending on the tolerance are statistically verified through several tuning cycles.

Scale-bridging analysis on deformation behavior of high-nitrogen austenitic steels.

Scale-bridging analysis on deformation behavior of high-nitrogen austenitic Fe-18Cr-10Mn-(0.39 and 0.69)N steels was performed by neutron diffraction, electron backscattered diffraction (EBSD), and transmission electron microscopy (TEM). Two important modes of deformation were identified depending on the nitrogen content: deformation twinning in the 0.69 N alloy and strain-induced martensitic transformation in the 0.39 N alloy. The phase fraction and deformation faulting probabilities were evaluated based on analyses of peak shift and asymmetry of neutron diffraction profiles. Semi in situ EBSD measurement was performed to investigate the orientation dependence of deformation microstructure and it showed that the variants of ε martensite as well as twin showed strong orientation dependence with respect to tensile axis. TEM observation showed that deformation twin with a {111} mathematical left angle bracket 112 mathematical right angle bracket crystallographic component was predominant in the 0.69 N alloy whereas two types of strain-induced martensites (ε and α' martensites) were observed in the 0.39 N alloy. It can be concluded that scale-bridging analysis using neutron diffraction, EBSD, and TEM can yield a comprehensive understanding of the deformation mechanism of nitrogen-alloyed austenitic steels.

Correction: Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems.

Correction for 'Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems' by Seyeong Yang et al., Nanoscale, 2023, https://doi.org/10.1039/D3NR01930F.

Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems.

Although vertical configurations for high-density storage require challenging process steps, such as etching high aspect ratios and atomic layer deposition (ALD), they are more affordable with a relatively simple lithography process and have been employed in many studies. Herein, the potential of memristors with CMOS-compatible 3D vertical stacked structures of Pt/Ti/HfOx/TiN-NCs/HfOx/TiN is examined for use in neuromorphic systems. The electrical characteristics (including I-V properties, retention, and endurance) were investigated for both planar single cells and vertical resistive random-access memory (VRRAM) cells at each layer, demonstrating their outstanding non-volatile memory capabilities. In addition, various synaptic functions (including potentiation and depression) under different pulse schemes, excitatory postsynaptic current (EPSC), and spike-timing-dependent plasticity (STDP) were investigated. In pattern recognition simulations, an improved recognition rate was achieved by the linearly changing conductance, which was enhanced by the incremental pulse scheme. The achieved results demonstrated the feasibility of employing VRRAM with TiN nanocrystals in neuromorphic systems that resemble the human brain.