Effect of Deep-Defects Excitation on Mechanical Energy Dissipation of Single-Crystal Diamond.

The ultrawide band gap of diamond distinguishes it from other semiconductors, in that all known defects have deep energy levels that are less active at room temperature. Here, we present the effect of deep defects on the mechanical energy dissipation of single-crystal diamond experimentally and theoretically up to 973 K. Energy dissipation is found to increase with temperature and exhibits local maxima due to the interaction between phonons and deep defects activated at specific temperatures. A two-level model with deep energies is proposed to explain well the energy dissipation at elevated temperatures. It is evident that the removal of boron impurities can substantially increase the quality factor of room-temperature diamond mechanical resonators. The deep energy nature of the defects bestows single-crystal diamond with outstanding low intrinsic energy dissipation in mechanical resonators at room temperature or above.

Strain-enhanced high Q-factor GaN micro-electromechanical resonator.

We report on a highly sensitive gallium nitride (GaN) micro-electromechanical (MEMS) resonator with a record quality factor (Q) exceeding 105 at the high resonant frequency (f) of 911 kHz by the strain engineering for the GaN-on-Si structure. The f of the double-clamped GaN beam bridge is increased from 139 to 911 kHz when the tensile stress is increased to 640 MPa. Although it is usually regarded that the energy dissipation increases with increasing resonant frequency, an ultra-high Q-factor which is more than two orders of magnitude higher than those of the other reported GaN-based MEMS is obtained. The high Q-factor results from the large tensile stress which can be intentionally introduced and engineered in the GaN epitaxial layer by utilizing the lattice mismatch between GaN and Si, leading to the stored elastic energy and drastically decreasing the energy dissipation. The developed GaN MEMS is further demonstrated as a highly sensitive mass sensor with a resolution of 10-12 g/s through detecting the microdroplet evaporation process. This work provides an avenue to improve the f × Q product of the MEMS through an internally strained structure.

High-performance visible to near-infrared photodetectors by using (Cd,Zn)Te single crystal.

The authors report on a high-performance metal-semiconductor-metal (MSM) photodetector fabricated on the Cd0.96Zn0.04Te single crystal with the photoresponse from visible to near infrared region. Benefitting from the high-quality single crystallization, an ultra-low dark current of ~10-10 A was obtained at a high applied voltage of 10 V, leading to a photo-to-dark-current ratio of more than 103 at 700 nm light illumination. The highest responsivity is estimated to be 1.43 A/W with a specific detectivity of 3.31 × 1012 Jones at 10 V at a relatively lower injection power density. The discrimination ratio between the near infrared region of 800 nm and 900 nm is almost 102, which is high enough for the accurate spectra selectivity. The MSM photodetector also exhibits a fast response speed of ~800 µs and extremely low persistent photoconductivity (PPC), while the PPC is inhibited at high temperatures.

Recent advances in solution-processed inorganic nanofilm photodetectors.

As important opto-electronical devices, nanofilm photodetectors constructed from inorganic low-dimensional nanostructures have drawn prime attention due to their significance in basic scientific research and potential technological applications. This review highlights a selection of important topics pertinent to inorganic nanofilm photodetectors processed via solution strategies. This article begins with a description of the advantages and drawbacks of nanofilm-based photodetectors versus 1D nanostructure-based ones, and then introduces rational design and controlled syntheses of various nanofilms via different wet-chemical routes, and then mainly focuses on their optoelectronic properties and applications in photodetectors based on the different types of nanofilms. Finally, the general challenges and the potential future directions of this exciting research and technology area are presented.

High detectivity solar-blind high-temperature deep-ultraviolet photodetector based on multi-layered (l00) facet-oriented ß-Ga2O3 nanobelts.

Fabrication of a high-temperature deep-ultraviolet photodetector working in the solar-blind spectrum range (190-280 nm) is a challenge due to the degradation in the dark current and photoresponse properties. Herein, ß-Ga2O3 multi-layered nanobelts with (l00) facet-oriented were synthesized, and were demonstrated for the first time to possess excellent mechanical, electrical properties and stability at a high temperature inside a TEM studies. As-fabricated DUV solar-blind photodetectors using (l00) facet-oriented ß-Ga2O3 multi-layered nanobelts demonstrated enhanced photodetective performances, that is, high sensitivity, high signal-to-noise ratio, high spectral selectivity, high speed, and high stability, importantly, at a temperature as high as 433 K, which are comparable to other reported semiconducting nanomaterial photodetectors. In particular, the characteristics of the photoresponsivity of the ß-Ga2O3 nanobelt devices include a high photoexcited current (>21 nA), an ultralow dark current (below the detection limit of 10(-14) A), a fast time response (<0.3 s), a high R(λ) (≈851 A/W), and a high EQE (~4.2 × 10(3)). The present fabricated facet-oriented ß-Ga2O3 multi-layered nanobelt based devices will find practical applications in photodetectors or optical switches for high-temperature environment.

High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond.

Diamond holds the highest figure-of-merits among all the known semiconductors for next-generation electronic devices far beyond the performance of conventional semiconductor silicon. To realize diamond integrated circuits, both n- and p-channel conductivity are required for the development of diamond complementary metal-oxide-semiconductor (CMOS) devices, as those established for semiconductor silicon. However, diamond CMOS has never been achieved due to the challenge in n-type channel MOS field-effect transistors (MOSFETs). Here, electronic-grade phosphorus-doped n-type diamond epilayer with an atomically flat surface based on step-flow nucleation mode is fabricated. Consequently, n-channel diamond MOSFETs are demonstrated. The n-type diamond MOSFETs exhibit a high field-effect mobility around 150 cm2 V-1 s-1 at 573 K, which is the highest among all the n-channel MOSFETs based on wide-bandgap semiconductors. This work enables the development of energy-efficient and high-reliability CMOS integrated circuits for high-power electronics, integrated spintronics, and extreme sensors under harsh environments.

High-detectivity nanowire photodetectors governed by bulk photocurrent dynamics with thermally stable carbide contacts.

Photodetectors fabricated from one-dimensional semiconductors are always dominated by the surface states due to their large surface-to-volume ratio. Therefore, the basic 5S requirements (high sensitivity, high signal-to-noise ratio, high spectral selectivity, high speed, and high stability) for practical photodetectors are difficult to satisfy. We report on high-temperature and high-detectivity solar-blind deep-ultraviolet (DUV) photodetectors based on ß-Ga2O3 nanowires, in which the photoresponse behavior is dominated by the bulk instead of the surface states. Ohmic contact to the ß-Ga2O3 nanowires was achieved by using a thermally stable tungsten carbide electrode. As a result, the DUV responsivity at 250 nm shows the highest values--4492 A W(-1) at room temperature (RT) and 3000 A W(-1) at 553 K (280 °C)--among the DUV photodetectors. The detectivity is as high as 1.26×10(16) cm Hz(1/2) W(-1) at RT, and still remains 4.1×10(14) cm Hz(1/2) W(-1) at as high a temperature as 553 K. The photocurrent dynamics from the ß-Ga2O3 nanowire is discussed in terms of the bulk dominated photoresponse behavior. Other wide bandgap DUV detectors based on nanostructures could also be developed for high-temperature applications based on this work.

A comprehensive review of semiconductor ultraviolet photodetectors: from thin film to one-dimensional nanostructures.

Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In) GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D) nanostructure semiconductors with a wide bandgap, such as ß-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications.

High-pressure MOCVD growth of InGaN thick films toward the photovoltaic applications.

The highly efficient photovoltaic cells require the In-rich InGaN film with a thickness more than 300 nm to achieve the effective photo⋅electricity energy conversion. However, the InGaN thick films suffer from poor crystalline quality and phase separations by using the conventional low-pressure metal organic chemical vapor deposition (MOCVD). We report on the growth of 0.3-1 µm-thick InGaN films with a specially designed vertical-type high-pressure MOCVD at the pressure up to 2.5 atms. The In incorporation is found to be greatly enhanced at the elevated pressures although the growth temperatures are the same. The phase separations are inhibited when the growth pressure is higher than atmospheric pressure, leading to the improved crystalline quality and better surface morphologies especially for the In-rich InGaN. The In0.4Ga0.6N with the thickness of 300 nm is further demonstrated as the active region of solar cells, and the widest photoresponse range from ultraviolet to more than 750 nm is achieved.

Experimental Formation and Mechanism Study for Super-High Dielectric Constant AlOx/TiOy Nanolaminates.

Super-high dielectric constant (k) AlOx/TiOy nanolaminates (ATO NLs) are deposited by an atomic layer deposition technique for application in next-generation electronics. Individual multilayers with uniform thicknesses are formed for the ATO NLs. With an increase in AlOx content in each ATO sublayer, the shape of the Raman spectrum has a tendency to approach that of a single AlOx layer. The effects of ATO NL deposition conditions on the electrical properties of the metal/ATO NL/metal capacitors were investigated. A lower deposition temperature, thicker ATO NL, and lower TiOy content in each ATO sublayer can lead to a lower leakage current and smaller loss tangent at 1 kHz for the capacitors. A higher deposition temperature, larger number of ATO interfaces, and higher TiOy content in each ATO sublayer are important for obtaining higher k values for the ATO NLs. With an increase in resistance in the capacitors, the ATO NLs vary from semiconductors to insulators and their k values have a tendency to decrease. For most of the capacitors, the capacitances reduce with increments in absolute measurement voltage. There are semi-circular shapes for the impedance spectra of the capacitors. By fitting them with the equivalent circuit, it is observed that with the increase in absolute voltage, both parallel resistance and capacitance decrease. The variation in the capacitance is explained well by a novel double-Schottky electrode contact model. The formation of super-high k values for the semiconducting ATO NLs is possibly attributed to the accumulation of charges.

Unconventional Giant "Magnetoresistance" in Bosonic Semiconducting Diamond Nanorings.

The emergence of superconductivity in doped insulators such as cuprates and pnictides coincides with their doping-driven insulator-metal transitions. Above the critical doping threshold, a metallic state sets in at high temperatures, while superconductivity sets in at low temperatures. An unanswered question is whether the formation of Cooper pairsin a well-established metal will inevitably transform the host material into a superconductor, as manifested by a resistance drop. Here, this question is addressed by investigating the electrical transport in nanoscale rings (full loops) and half loops manufactured from heavily boron-doped diamond. It is shown that in contrast to the diamond half-loops (DHLs) exhibiting a metal-superconductor transition, the diamond nanorings (DNRs) demonstrate a sharp resistance increase up to 430% and a giant negative "magnetoresistance" below the superconducting transition temperature of the starting material. The finding of the unconventional giant negative "magnetoresistance", as distinct from existing categories of magnetoresistance, that is, the conventional giant magnetoresistance in magnetic multilayers, the colossal magnetoresistance in perovskites, and the geometric magnetoresistance in semiconductor-metal hybrids, reveals the transformation of the DNRs from metals to bosonic semiconductors upon the formation of Cooper pairs. DNRs like these could be used to manipulate Cooper pairs in superconducting quantum devices.

Wearable Magnetic Field Sensor with Low Detection Limit and Wide Operation Range for Electronic Skin Applications.

Flexible electronic devices extended abilities of humans to perceive their environment conveniently and comfortably. Among them, flexible magnetic field sensors are crucial to detect changes in the external magnetic field. State-of-the-art flexible magnetoelectronics do not exhibit low detection limit and large working range simultaneously, which limits their application potential. Herein, a flexible magnetic field sensor possessing a low detection limit of 22 nT and wide sensing range from 22 nT up to 400 mT is reported. With the detection range of seven orders of magnitude in magnetic field sensor constitutes at least one order of magnitude improvement over current flexible magnetic field sensor technologies. The sensor is designed as a cantilever beam structure accommodating a flexible permanent magnetic composite and an amorphous magnetic wire enabling sensitivity to low magnetic fields. To detect high fields, the anisotropy of the giant magnetoimpedance effect of amorphous magnetic wires to the magnetic field direction is explored. Benefiting from mechanical flexibility of sensor and its broad detection range, its application potential for smart wearables targeting geomagnetic navigation, touchless interactivity, rehabilitation appliances, and safety interfaces providing warnings of exposure to high magnetic fields are explored.

One-dimensional inorganic nanostructures: synthesis, field-emission and photodetection.

One-dimensional inorganic nanostructures have drawn prime attention due to their potential for understanding fundamental physical concepts and constructing nanoscale electronic and optoelectronic devices. This critical review mainly focuses on our recent research progresses in 1D inorganic nanostructures, including their rational synthesis and potential applications, with an emphasis on field-emitter and photodetector applications. Firstly, we will discuss the rational design of synthetic strategies and the synthesis of 1D nanostructures via a vapour phase approach. Secondly, we will present our recent progresses with respect to several kinds of important inorganic nanostructures and their field-emission and photoconductivity characteristics. Finally, we conclude this review with some perspectives/outlook and future research in these fields (212 references).

Stress effect on the resonance properties of single-crystal diamond cantilever resonators for microscopy applications.

Micro-cantilever beams have been widely used for surface sensing applications as well as atomic force microscope. However, surface stress appears in cantilever beams due to a variety of factors such as the absorption of molecules, temperature variations, materials imperfectness, and the fabrication process. Single-crystal diamond (SCD) has been regarded as an ideal material for cantilever sensors through the surface effect due to the outstanding mechanical rigidity and chemical inertness. In this paper, the authors report on the SCD cantilever beams fabricated by a smart-cut method with high quality factors up to 14 000 and stress characterization by surface geometry curvature observation and Raman microscopy. Although both surface geometry profile and Raman shift show the existence of surface stress in the SCD cantilever beams, the resonance properties are little influenced and maintain excellent rigidity and high quality. Therefore, the SCD-on-SCD resonator provides a promising platform for high-reliability microscopy applications.

A comparative study of interfacial thermal conductance between metal and semiconductor.

To understand and control thermal conductance of interface between metal and semiconductor has now become a crucial task for the thermal design and management of nano-electronic and micro-electronic devices. The interfacial alignments and electronic characteristics of the interfaces between metal and semiconductor are studied using a first-principles calculation based on hybrid density functional theory. The thermal conductance of interfaces between metal and semiconductor were calculated and analyzed using diffuse mismatch model, acoustic mismatch model and nonequilibrium molecular dynamics methods. Especially, according to nonequilibrium molecular dynamics, the values of thermal conductance were obtained to be 32.55 MW m-2 K-1 and 341.87 MW m-2 K-1 at C-Cu and Si-Cu interfaces, respectively. These results of theoretical simulation calculations are basically consistent with the current experimental data, which indicates that phonon-phonon interaction play a more important role than electron-phonon interaction during heat transport. It may be effective way to improve the interfacial thermal conductance through enhancing the interface coupling strength at the metal-semiconductor interface because the strong interfacial scattering plays a role in suppressing in the weaker interface coupling heterostructure, leading to the lower thermal conductance of interfaces. This could provide a beneficial reference for the design of the Schottky diode and thermal management at the interfaces between metal and semiconductor.

Electrochemical-coupling layer-by-layer (ECC-LbL) assembly.

Electrochemical-coupling layer-by-layer (ECC-LbL) assembly is introduced as a novel fabrication methodology for preparing layered thin films. This method allows us to covalently immobilize functional units (e.g., porphyrin, fullerene, and fluorene) into thin films having desired thicknesses and designable sequences for both homo- and heteroassemblies while ensuring efficient layer-to-layer electronic interactions. Films were prepared using a conventional electrochemical setup by a simple and inexpensive process from which various layering sequences can be obtained, and the photovoltaic functions of a prototype p/n heterojunction device were demonstrated.

Bio-Inspired Multi-Mode Pain-Perceptual System (MMPPS) with Noxious Stimuli Warning, Damage Localization, and Enhanced Damage Protection.

The multi-mode pain-perceptual system (MMPPS) is essential for the human body to perceive noxious stimuli in all circumstances and make an appropriate reaction. Based on the central sensitization mechanism, the MMPPS can switch between different working modes and thus offers a smarter protection mechanism to human body. Accordingly, before injury MMPPS can offer warning of excessive pressure with normal pressure threshold. After injury, extra care on the periphery of damage will be activated by decreasing the pressure threshold. Furthermore, the MMPPS will gradually recover back to a normal state as damage heals. Although current devices can realize basic functions like damage localization and nociceptor signal imitating, the development of a human-like MMPPS is still a great challenge. Here, a bio-inspired MMPPS is developed for prosthetics protection, in which all working modes is realized and controlled by mimicking the central sensitization mechanism. Accordingly, the system warns one of a potential injury, identifies the damaged area, and subsequently offers extra care. The proposed system can open new avenues for designing next-generation prosthetics, especially make other smart sensing systems operate under complete protection against injuries.

Enhancing Delta E Effect at High Temperatures of Galfenol/Ti/Single-Crystal Diamond Resonators for Magnetic Sensing.

A conventional wisdom is that the sensing properties of magnetic sensors at high temperatures will be degraded due to the materials' deterioration. Here, the concept of high-temperature enhancing magnetic sensing is proposed based on the hybrid structure of SCD MEMS resonator functionalized with a high thermal-stable ferromagnetic galfenol (FeGa) film. The delta E effect of the magnetostrictive FeGa thin film on Ti/SCD cantilevers is investigated by varying the operating temperature from 300 to 773 K upon external magnetic fields. The multilayer structure magnetic sensor presents a high sensitivity of 71.1 Hz/mT and a low noise level of 10 nT/√Hz at 773 K for frequencies higher than 7.5 kHz. The high-temperature magnetic sensing performance exceeds those of the reported magnetic sensors. Furthermore, an anomalous behavior is observed on the delta E effect, which exhibits a positive temperature dependence with the law of Tn. Based on the resonance frequency shift of the FeGa/Ti/SCD cantilever, the strain coupling in the multilayers of the FeGa/Ti/SCD structure under a magnetic field is strengthened with increasing temperature. The delta E effect shows a strong relationship with the azimuthal angle, θ, as a sine function at 300 and 773 K. This work provides a strategy to develop magnetic sensors for high-temperature applications with performance superior to that of the present ones.

Block-copolymer-nanowires with nanosized domain segregation and high charge mobilities as stacked p/n heterojunction arrays for repeatable photocurrent switching.

Development of materials for efficient photoenergy conversion is a subject of critical importance in current science and technology. Efficient performance requires well-controlled segregation of electron donor and acceptor moieties, which we have achieved using block copolymers of tetraphenylporphinatozinc(II) (donor) and C(60) fullerene (acceptor) using living ring-opening metathesis polymerization (ROMP). The resulting amphiphilic ROMP block copolymers undergo self-assembly into nanostructured phase-segregated 1-dimensional nanowires with an approximately 5.5 nm periodicity zebra-stripe-like morphology simply by drop-casting solutions of the polymers onto a substrate such as mica or highly oriented pyrolytic graphite (HOPG). Thin films of the self-assembled nanophase-segregated copolymers exhibit high charge carrier mobilities (approximately 0.26 cm(2) V(-1) s(-1)) and electrical conductivities (up to 6.4 x 10(-4) cm(2) V(-1) s(-1)) as well as highly repeatable photocurrent switching with rapid ON/OFF responses upon white light irradiation.

High-Performance Blue/Ultraviolet-Light-Sensitive ZnSe-Nanobelt Photodetectors.

Single-crystalline zinc selenide (ZnSe) nanobelts were fabricated via the ethylenediamine (en)-assisted ternary solution technique and subsequent thermal treatment. Individual ZnSe nanobelts were assembled into nanoscale devices, showing a high spectral selectivity and photocurrent/immediate-decay ratio and a fast time response, justifying effective utilization of the ZnSe nanobelts as blue/UV-light-sensitive photodetectors.