Electrically pumped topological laser with valley edge modes.

Quantum cascade lasers are compact, electrically pumped light sources in the technologically important mid-infrared and terahertz region of the electromagnetic spectrum1,2. Recently, the concept of topology3 has been expanded from condensed matter physics into photonics4, giving rise to a new type of lasing5-8 using topologically protected photonic modes that can efficiently bypass corners and defects4. Previous demonstrations of topological lasers have required an external laser source for optical pumping and have operated in the conventional optical frequency regime5-8. Here we demonstrate an electrically pumped terahertz quantum cascade laser based on topologically protected valley edge states9-11. Unlike topological lasers that rely on large-scale features to impart topological protection, our compact design makes use of the valley degree of freedom in photonic crystals10,11, analogous to two-dimensional gapped valleytronic materials12. Lasing with regularly spaced emission peaks occurs in a sharp-cornered triangular cavity, even if perturbations are introduced into the underlying structure, owing to the existence of topologically protected valley edge states that circulate around the cavity without experiencing localization. We probe the properties of the topological lasing modes by adding different outcouplers to the topological cavity. The laser based on valley edge states may open routes to the practical use of topological protection in electrically driven laser sources.

Photonic Majorana quantum cascade laser with polarization-winding emission.

Topological cavities, whose modes are protected against perturbations, are promising candidates for novel semiconductor laser devices. To date, there have been several demonstrations of topological lasers (TLs) exhibiting robust lasing modes. The possibility of achieving nontrivial beam profiles in TLs has recently been explored in the form of vortex wavefront emissions enabled by a structured optical pump or strong magnetic field, which are inconvenient for device applications. Electrically pumped TLs, by contrast, have attracted attention for their compact footprint and easy on-chip integration with photonic circuits. Here, we experimentally demonstrate an electrically pumped TL based on photonic analogue of a Majorana zero mode (MZM), implemented monolithically on a quantum cascade chip. We show that the MZM emits a cylindrical vector (CV) beam, with a topologically nontrivial polarization profile from a terahertz (THz) semiconductor laser.

Electrically-pumped compact topological bulk lasers driven by band-inverted bound states in the continuum.

One of the most exciting breakthroughs in physics is the concept of topology that was recently introduced to photonics, achieving robust functionalities, as manifested in the recently demonstrated topological lasers. However, so far almost all attention was focused on lasing from topological edge states. Bulk bands that reflect the topological bulk-edge correspondence have been largely missed. Here, we demonstrate an electrically pumped topological bulk quantum cascade laser (QCL) operating in the terahertz (THz) frequency range. In addition to the band-inversion induced in-plane reflection due to topological nontrivial cavity surrounded by a trivial domain, we further illustrate the band edges of such topological bulk lasers are recognized as the bound states in the continuum (BICs) due to their nonradiative characteristics and robust topological polarization charges in the momentum space. Therefore, the lasing modes show both in-plane and out-of-plane tight confinements in a compact laser cavity (lateral size ~3λlaser). Experimentally, we realize a miniaturized THz QCL that shows single-mode lasing with a side-mode suppression ratio (SMSR) around 20 dB. We also observe a cylindrical vector beam for the far-field emission, which is evidence for topological bulk BIC lasers. Our demonstration on miniaturization of single-mode beam-engineered THz lasers is promising for many applications including imaging, sensing, and communications.

Broadband and photovoltaic THz/IR response in the GaAs-based ratchet photodetector.

High-performance broadband infrared (IR)/terahertz (THz) detection is crucial in many optoelectronic applications. However, the spectral response range of semiconductor-based photodetectors is limited by the bandgaps. This paper proposes a ratchet structure based on the GaAs/AlxGa1-xAs heterojunction, where the quasi-stationary hot hole distribution and intravalence band absorption from light or heavy hole states to the split-off band overcome the bandgap limit, ensuring an ultrabroadband photoresponse from near-IR to THz region (4 to 300 THz). The peak responsivity of the proposed structure can reach 7.3 A/W, which is five orders of magnitude higher than that of the existing broadband photon-type detector. Because of the ratchet effect, the proposed photodetector has a bias-tunable photoresponse characteristic and can operate in the photovoltaic mode with a broad photocurrent spectrum (18 to 300 THz). This work not only demonstrates a broadband photon-type THz/IR photodetector but also provides a method to study the light-responsive ratchet.