Highly sensitive, broadband microwave frequency identification using a chip-based Brillouin optoelectronic oscillator.

Detection and frequency estimation of radio frequency (RF) signals are critical in modern RF systems, including wireless communication and radar. Photonic techniques have made huge progress in solving the problem imposed by the fundamental trade-off between detection range and accuracy. However, neither fiber-based nor integrated photonic RF signal detection and frequency estimation systems have achieved wide range and low error with high sensitivity simultaneously in a single system. In this paper, we demonstrate the first Brillouin opto-electronic oscillator (B-OEO) based on on-chip stimulated Brillouin scattering (SBS) to achieve RF signal detection. The broad tunability and narrowband amplification of on-chip SBS allow for the wide-range and high-accuracy detection. Feeding the unknown RF signal into the B-OEO cavity amplifies the signal which is matched with the oscillation mode to detect low-power RF signals. We are able to detect RF signals from 1.5 to 40 GHz with power levels as low as -67 dBm and a frequency accuracy of ± 3.4 MHz. This result paves the way to compact, fully integrated RF detection and channelization.

Brillouin spectroscopy of a hybrid silicon-chalcogenide waveguide with geometrical variations.

Recent advances in design and fabrication of photonic-phononic waveguides have enabled stimulated Brillouin scattering in silicon-based platforms such as underetched silicon waveguides and hybrid waveguides. Due to the sophisticated design and, more importantly, high sensitivity of the Brillouin resonances to geometrical variations in micro- and nano-scale structures, it is necessary to have access to the localized opto-acoustic response along those waveguides to monitor their uniformity and maximize their interaction strength. In this Letter, we design and fabricate photonic-phononic waveguides with a deliberate width variation on a hybrid silicon-chalcogenide photonic chip and confirm the effect of the geometrical variation on the localized Brillouin response using a distributed Brillouin measurement.

Low propagation loss silicon-on-sapphire waveguides for the mid-infrared.

We report record low loss silicon-on-sapphire nanowires for applications to mid infrared optics. We achieve propagation losses as low as 0.8 dB/cm at λ = 1550 nm, ~1.1 to 1.4 dB/cm at λ = 2080 nm and < 2dB/cm at λ = 5.18 µm.