Fabrication and nanophotonic waveguide integration of silicon carbide colour centres with preserved spin-optical coherence.

Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing compatible with nanofabrication processes and device control used by the semiconductor industry. System scalability towards large-scale quantum networks demands integration into nanophotonic structures with efficient spin-photon interfaces. However, degradation of the spin-optical coherence after integration in nanophotonic structures has hindered the potential of most colour centre platforms. Here, we demonstrate the implantation of silicon vacancy centres (VSi) in SiC without deterioration of their intrinsic spin-optical properties. In particular, we show nearly lifetime-limited photon emission and high spin-coherence times for single defects implanted in bulk as well as in nanophotonic waveguides created by reactive ion etching. Furthermore, we take advantage of the high spin-optical coherences of VSi centres in waveguides to demonstrate controlled operations on nearby nuclear spin qubits, which is a crucial step towards fault-tolerant quantum information distribution based on cavity quantum electrodynamics.

Utilizing photonic band gap in triangular silicon carbide structures for efficient quantum nanophotonic hardware.

Silicon carbide is among the leading quantum information material platforms due to the long spin coherence and single-photon emitting properties of its color center defects. Applications of silicon carbide in quantum networking, computing, and sensing rely on the efficient collection of color center emission into a single optical mode. Recent hardware development in this platform has focused on angle-etching processes that preserve emitter properties and produce triangularly shaped devices. However, little is known about the light propagation in this geometry. We explore the formation of photonic band gap in structures with a triangular cross-section, which can be used as a guiding principle in developing efficient quantum nanophotonic hardware in silicon carbide. Furthermore, we propose applications in three areas: the TE-pass filter, the TM-pass filter, and the highly reflective photonic crystal mirror, which can be utilized for efficient collection and propagating mode selection of light emission.