Large and Uniform Optical Emission Shifts in Quantum Dots Strained along Their Growth Axis.

We introduce a calibration method to quantify the impact of external mechanical stress on the emission wavelength of distinct quantum dots (QDs). Specifically, these emitters are integrated in a cross-section of a semiconductor core wire and experience a longitudinal strain that is induced by an amorphous capping shell. Detailed numerical simulations show that, thanks to the shell mechanical isotropy, the strain in the core is uniform, which enables a direct comparison of the QD responses. Moreover, the core strain is determined in situ by an optical measurement, yielding reliable values for the QD emission tuning slope. This calibration technique is applied to self-assembled InAs QDs submitted to incremental elongation along their growth axis. In contrast to recent studies conducted on similar QDs submitted to a uniaxial stress perpendicular to the growth direction, optical spectroscopy reveals up to ten times larger tuning slopes, with a moderate dispersion. These results highlight the importance of the stress direction to optimize the QD optical shift, with general implications, both in static and dynamic regimes. As such, they are in particular relevant for the development of wavelength-tunable single-photon sources or hybrid QD opto-mechanical systems.

Dielectric GaAs antenna ensuring an efficient broadband coupling between an InAs quantum dot and a Gaussian optical beam.

We introduce the photonic trumpet, a dielectric structure which ensures a nearly perfect coupling between an embedded quantum light source and a Gaussian free-space beam. A photonic trumpet exploits both the broadband spontaneous emission control provided by a single-mode photonic wire and the expansion of this mode within a conical taper. Numerical simulations highlight the performance and robustness of this concept. As a first application in the field of quantum optics, we report the realization of an ultrabright single-photon source. The device, a high aspect ratio GaAs photonic trumpet containing a few InAs quantum dots, demonstrates a first-lens external efficiency of 0.75±0.1 and an external coupling efficiency to a Gaussian beam as high as 0.58±0.08.

Linearly polarized, single-mode spontaneous emission in a photonic nanowire.

We introduce dielectric elliptical photonic nanowires to funnel efficiently the spontaneous emission of an embedded emitter into a single optical mode. Inside a wire with a moderate lateral aspect ratio, the electromagnetic environment is largely dominated by a single guided mode, with a linear polarization oriented along the ellipse major axis. The resulting monomode spontaneous emission is maintained over a broad wavelength range, a key asset of this 1D photonic structure. Our theoretical analysis is completed by an experimental study of GaAs elliptical photonic wires with embedded InAs quantum dots. In particular, the fraction of collected photons with the desired linear polarization can exceed 95%.

Inhibition, enhancement, and control of spontaneous emission in photonic nanowires.

We experimentally investigate the spontaneous emission (SE) rates of single InAs quantum dots embedded in GaAs photonic nanowires. For a diameter leading to the optimal confinement of the fundamental guided mode HE11, the coupling to HE11 dominates the SE process and an increase of the SE rate by a factor of 1.5 is achieved. When the diameter is decreased, the coupling to this mode vanishes rapidly, thus allowing the coupling to the other radiation modes to be probed. In these conditions, a SE inhibition factor of 16, equivalent to the one obtained in state-of-the-art photonic crystals, is measured. These results, which are supported by fully vectorial calculations, confirm the potential of photonic nanowires for a nearly perfect, broadband SE control.