Optical Kerr effect and third harmonic generation in topological Dirac/Weyl semimetal.

We study the nonlinear optical response generated by the massless Dirac quasiparticles residing around the topologically-protected Dirac/Weyl nodal points in three-dimensional (3D) topological semimetals. Analytical expressions of third-order interband nonlinear optical conductivities are obtained based on a quantum mechanical formalism which couples 3D Dirac fermions with multiple photons. Our results reveal that the massless Dirac fermions in three dimensions retains strong optical nonlinearity in terahertz frequency regime similar to the case of the two-dimensional Dirac fermions in graphene. At room temperature, the Kerr nonlinear refractive index and the harmonic generation susceptibility are found to be n2 = 10-11 ∼ 10-8 m2W-1 and χ(3) = 10-14 ∼ 10-8 m2V-2, respectively, in the few terahertz frequency regimes, which is comparable to graphene and orders of magnitudes stronger than many nonlinear crystals. Importantly, because 3D topological Dirac/Weyl semimetals possess bulk structural advantage not found in the strictly two-dimensional graphene, greater design flexibility and improved ease-of-fabrication in terms of photonic and optoelectronic device applications can be achieved. Our finding reveals the potential of 3D topological semimetals as a viable alternative to graphene for nonlinear optics applications.

Wavelength selective mode division multiplexing on a silicon chip.

Multiplexing of optical modes in waveguides is demonstrated using coupled vertical gratings. The device utilizes sinusoidally corrugated waveguides of different widths with a period designed to multiplex information at 1.55 µm. The design, fabrication and characterization of devices is performed. Multiplexing of modes is demonstrated in optical structures which support 3 and 5 quasi-TE modes. The design utilizes counter-propagating modes in periodic structures, thus enabling the device to combine its mode division multiplexing capabilities with wavelength division multiplexing functionalities to further augment the multiplexing capacity of the device.

Plasmonic coupled-cavity system for enhancement of surface plasmon localization in plasmonic detectors.

A plasmonic coupled-cavity system, which consists of a quarter-wave coupler cavity, a resonant Fabry-Pérot detector nanocavity, and an off-resonant reflector cavity, is used to enhance the localization of surface plasmons in a plasmonic detector. The coupler cavity is designed based on transmission line theory and wavelength scaling rules in the optical regime, while the reflector cavity is derived from off-resonant resonator structures to attenuate transmission of plasmonic waves. We observed strong coupling of the cavities in simulation results, with an 86% improvement of surface plasmon localization achieved. The plasmonic coupled-cavity system may find useful applications in areas of nanoscale photodetectors, sensors, and an assortment of plasmonic-circuit devices.

Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge.

CMOS platforms operating at the telecommunications wavelength either reside within the highly dissipative two-photon regime in silicon-based optical devices, or possess small nonlinearities. Bandgap engineering of non-stoichiometric silicon nitride using state-of-the-art fabrication techniques has led to our development of USRN (ultra-silicon-rich nitride) in the form of Si7N3, that possesses a high Kerr nonlinearity (2.8 × 10-13 cm2 W-1), an order of magnitude larger than that in stoichiometric silicon nitride. Here we experimentally demonstrate high-gain optical parametric amplification using USRN, which is compositionally tailored such that the 1,550 nm wavelength resides above the two-photon absorption edge, while still possessing large nonlinearities. Optical parametric gain of 42.5 dB, as well as cascaded four-wave mixing with gain down to the third idler is observed and attributed to the high photon efficiency achieved through operating above the two-photon absorption edge, representing one of the largest optical parametric gains to date on a CMOS platform.