RESUMEN
We investigate different processes for optimizing the formation of Ohmic contacts to InAs nanowires. The nanowires are grown via molecular beam epitaxy without the use of metal catalysts. Metallic contacts are attached to the nanowires by using an electron beam lithography process. Before deposition of the contacts, the InAs nanowires are treated either by wet etching in an ammonium polysulfide (NH(4))(2)S(x) solution or by an argon milling process in order to remove a surface oxide layer. Two-point electrical measurements show that the resistance of the ammonium polysulfide-treated nanowires is two orders of magnitude lower than that of the untreated nanowires. The nanowires that are treated by the argon milling process show a resistance which is more than an order of magnitude lower than that of those treated with ammonium polysulfide. Four-point measurements allow us to extract an upper bound of 1.4 × 10(-7) Ω cm(2) for the contact resistivity of metallic contacts on nanowires treated by the argon milling process.
Asunto(s)
Arsenicales/química , Electrodos , Indio/química , Nanopartículas del Metal/química , Arsenicales/efectos de la radiación , Conductividad Eléctrica , Iones Pesados , Indio/efectos de la radiación , Ensayo de Materiales , Nanopartículas del Metal/efectos de la radiación , Propiedades de Superficie/efectos de la radiaciónRESUMEN
We report on the self-catalysed growth of vertical InAs(1-x)P(x) nanowires on Si(111) substrates by solid-source molecular-beam epitaxy. High-resolution transmission electron microscopy revealed the mixed wurtzite and zincblende structure of the nanowires. Energy dispersive x-ray spectroscopy and x-ray diffraction measurements were used to study the phosphorus content x in the InAs(1-x)P(x) nanowires, which was shown to be in the range 0-10 %. The dependence of phosphorus incorporation in the nanowires on the phosphorus flux in the growth chamber was investigated. The incorporation rate coefficients of As and P in InAs(1x)P(x) nanowires were found to be in the ratio 10 ± 5 to 1.
RESUMEN
The authors suggest a method for the treatment of patients with xerostomia, making use of acupuncture in total and local effect points and of manual therapy of the detected pathobiomechanical disorders in the cervical portion of the spine. The immediate and late results of treatment were followed up. The suggested treatment proved fairly effective.