Correction: Discovering atomistic pathways for supply of metal atoms from methyl-based precursors to graphene surface.

Correction for 'Discovering atomistic pathways for supply of metal atoms from methyl-based precursors to graphene surface' by Davide G. Sangiovanni et al., Phys. Chem. Chem. Phys., 2023, 25, 829-837, https://doi.org/10.1039/D2CP04091C.

Discovering atomistic pathways for supply of metal atoms from methyl-based precursors to graphene surface.

Conceptual 2D group III nitrides and oxides (e.g., 2D InN and 2D InO) in heterostructures with graphene have been realized by metal-organic chemical vapor deposition (MOCVD). MOCVD is expected to bring forth the same impact in the advancement of 2D semiconductor materials as in the fabrication of established semiconductor materials and device heterostructures. MOCVD employs metal-organic precursors such as trimethyl-indium, -gallium, and -aluminum, with (strong) metal-carbon bonds. Mechanisms that regulate MOCVD processes at the atomic scale are largely unknown. Here, we employ density-functional molecular dynamics - accounting for van der Waals interactions - to identify the reaction pathways responsible for dissociation of the trimethylindium (TMIn) precursor in the gas phase as well as on top-layer and zero-layer graphene. The simulations reveal how collisions with hydrogen molecules, intramolecular or surface-mediated proton transfer, and direct TMIn/graphene reactions assist TMIn transformations, which ultimately enables delivery of In monomers or InH and CH3In admolecules, on graphene. This work provides knowledge for understanding the nucleation and intercalation mechanisms at the atomic scale and for carrying out epitaxial growth of 2D materials and graphene heterostructures.

Room-temperature diffusion of metal clusters on graphene.

We study the diffusion dynamics, the diffusion mechanisms, and the adsorption energetics of Ag, Au, Cu, and Pd dimers, as well as of Ag trimers on single-layer graphene (SLG) by means of ab initio molecular dynamics (AIMD) simulations and density-functional theory (DFT) calculations. The simulations show that Ag, Cu, and Au clusters exhibit a super-diffusive pattern characterized by long jumps, which can be explained by the flat potential energy landscape (PEL) (corrugation of a few tens of meV) encountered by those clusters on SLG. Pd dimers, instead, diffuse in a pattern that is reminiscent of conventional random walk, which is consistent with a significantly rougher PEL of the order of 100 meV. Moreover, our data show that all clusters exhibit diffusion mechanisms that include both concerted translation and rotation. The overall results of the present study provide key insights for modeling the growth of metal layers and nanostructures on graphene and other van der Waals materials, which is a prerequisite for the directed growth of multifunctional metal contacts in a broad range of enabling devices.

Ceramic transition metal diboride superlattices with improved ductility and fracture toughness screened by ab initio calculations.

Inherent brittleness, which easily leads to crack formation and propagation during use, is a serious problem for protective ceramic thin-film applications. Superlattice architectures, with alternating nm-thick layers of typically softer/stiffer materials, have been proven powerful method to improve the mechanical performance of, e.g., cubic transition metal nitride ceramics. Using high-throughput first-principles calculations, we propose that superlattice structures hold promise also for enhancing mechanical properties and fracture resistance of transition metal diborides with two competing hexagonal phases, [Formula: see text] and [Formula: see text]. We study 264 possible combinations of [Formula: see text], [Formula: see text] or [Formula: see text] MB[Formula: see text] (where M [Formula: see text] Al or group 3-6 transition metal) diboride superlattices. Based on energetic stability considerations, together with restrictions for lattice and shear modulus mismatch ([Formula: see text], [Formula: see text] GPa), we select 33 superlattice systems for further investigations. The identified systems are analysed in terms of mechanical stability and elastic constants, [Formula: see text], where the latter provide indication of in-plane vs. out-of-plane strength ([Formula: see text], [Formula: see text]) and ductility ([Formula: see text], [Formula: see text]). The superlattice ability to resist brittle cleavage along interfaces is estimated by Griffith's formula for fracture toughness. The [Formula: see text]-type TiB[Formula: see text]/MB[Formula: see text] (M [Formula: see text] Mo, W), HfB[Formula: see text]/WB[Formula: see text], VB[Formula: see text]/MB[Formula: see text] (M [Formula: see text] Cr, Mo), NbB[Formula: see text]/MB[Formula: see text] (M [Formula: see text] Mo, W), and [Formula: see text]-type AlB[Formula: see text]/MB[Formula: see text] (M [Formula: see text] Nb, Ta, Mo, W), are suggested as the most promising candidates providing atomic-scale basis for enhanced toughness and resistance to crack growth.

Valence electron concentration as key parameter to control the fracture resistance of refractory high-entropy carbides.

Although high-entropy carbides (HECs) have hardness often superior to that of parent compounds, their brittleness-a problem shared with most ceramics-has severely limited their reliability. Refractory HECs in particular are attracting considerable interest due to their unique combination of mechanical and physical properties, tunable over a vast compositional space. Here, combining statistics of crack formation in bulk specimens subject to mild, moderate, and severe nanoindentation loading with ab initio molecular dynamics simulations of alloys under tension, we show that the resistance to fracture of cubic-B1 HECs correlates with their valence electron concentration (VEC). Electronic structure analyses show that VEC ≳ 9.4 electrons per formula unit enhances alloy fracture resistance due to a facile rehybridization of electronic metallic states, which activates transformation plasticity at the yield point. Our work demonstrates a reliable strategy for computationally guided and rule-based (i.e., VEC) engineering of deformation mechanisms in high entropy, solid solution, and doped ceramics.

Large mechanical properties enhancement in ceramics through vacancy-mediated unit cell disturbance.

Tailoring vacancies is a feasible way to improve the mechanical properties of ceramics. However, high concentrations of vacancies usually compromise the strength (or hardness). We show that a high elasticity and flexural strength could be achieved simultaneously using a nitride superlattice architecture with disordered anion vacancies up to 50%. Enhanced mechanical properties primarily result from a distinctive deformation mechanism in superlattice ceramics, i.e., unit-cell disturbances. Such a disturbance substantially relieves local high-stress concentration, thus enhancing deformability. No dislocation activity involved also rationalizes its high strength. The work renders a unique understanding of the deformation and strengthening/toughening mechanism in nitride ceramics.

Anomalous versus Normal Room-Temperature Diffusion of Metal Adatoms on Graphene.

Fabrication of high-performance heterostructure devices requires fundamental understanding of the diffusion dynamics of metal species on 2D materials. Here, we investigate the room-temperature diffusion of Ag, Au, Cu, Pd, Pt, and Ru adatoms on graphene using ab initio and classical molecular dynamics simulations. We find that Ag, Au, Cu, and Pd follow Lévy walks, in which adatoms move continuously within ∼1-4 nm2 domains during ∼0.04 ns timeframes, and they occasionally perform ∼2-4 nm flights across multiple surface adsorption sites. This anomalous diffusion pattern is associated with a flat (<50 meV) potential energy landscape (PEL), which renders surface vibrations important for adatom migration. The latter is not the case for Pt and Ru, which encounter a significantly rougher PEL (>100 meV) and, hence, migrate via conventional random walks. Thus, adatom anomalous diffusion is a potentially important aspect for modeling growth of metal films and nanostructures on 2D materials.

Nanoscale phenomena ruling deposition and intercalation of AlN at the graphene/SiC interface.

The possibility for kinetic stabilization of prospective 2D AlN was explored by rationalizing metal organic chemical vapor deposition (MOCVD) processes of AlN on epitaxial graphene. From the wide range of temperatures which can be covered in the same MOCVD reactor, the deposition was performed at the selected temperatures of 700, 900, and 1240 °C. The characterization of the structures by atomic force microscopy, electron microscopy and Raman spectroscopy revealed a broad range of surface nucleation and intercalation phenomena. These phenomena included the abundant formation of nucleation sites on graphene, the fragmentation of the graphene layers which accelerated with the deposition temperature, the delivery of excess precursor-derived carbon adatoms to the surface, as well as intercalation of sub-layers of aluminum atoms at the graphene/SiC interface. The conceptual understanding of these nanoscale phenomena was supported by our previous comprehensive ab initio molecular dynamics (AIMD) simulations of the surface reaction of trimethylaluminum, (CH3)3Al, precursor with graphene. A case of applying trimethylindium, (CH3)3In, precursor to epitaxial graphene was considered in a comparative way.