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Lead halide perovskite solar cells have been emerging as very promising candidates for applications in indoor photovoltaics. To maximize their indoor performance, it is of critical importance to suppress intrinsic defects of the perovskite active layer. Herein, a facile solvent-engineering strategy is developed for effective suppression of both surface and bulk defects in lead halide perovskite indoor solar cells, leading to a high efficiency of 35.99% under the indoor illumination of 1000 lux Cool-white light-emitting diodes. Replacing dimethylformamide (DMF) with N-methyl-2-pyrrolidone (NMP) in the perovskite precursor solvent significantly passivates the intrinsic defects within the thus-prepared perovskite films, prolongs the charge carrier lifetimes and reduces non-radiative charge recombination of the devices. Compared to the DMF, the much higher interaction energy between NMP and formamidinium iodide/lead halide contributes to the markedly improved quality of the perovskite thin films with reduced interfacial halide deficiency and non-radiative charge recombination, which in turn enhances the device performance. This work paves the way for developing efficient indoor perovskite solar cells for the increasing demand for power supplies of Internet-of-Things devices.
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The emergence of ferroelectricity in two-dimensional (2D) metal oxides is a topic of significant technological interest; however, many 2D metal oxides lack intrinsic ferroelectric properties. Therefore, introducing asymmetry provides access to a broader range of 2D materials within the ferroelectric family. Here, the generation of asymmetry in 2D SnO by doping the material with Hf0.5Zr0.5O2 (HZO) is demonstrated. A liquid metal process as a doping strategy for the preparation of 2D HZO-doped SnO with robust ferroelectric characteristics is implemented. This technology takes advantage of the selective interface enrichment of molten Sn with HZO crystallites. Molecular dynamics simulations indicate a strong tendency of Hf and Zr atoms to migrate toward the surface of liquid metal and embed themselves within the growing oxide layer in the form of HZO. Thus, the liquid metal-based harvesting/doping technique is a feasible approach devised for producing novel 2D metal oxides with induced ferroelectric properties, represents a significant development for the prospects of random-access memories.
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Electric field control of topologically nontrivial magnetic textures, such as skyrmions, provides a paradigm shift for future spintronics beyond the current silicon-based technology. While significant progress has been made by X-ray and neutron scattering studies, direct observation of such nanoscale spin structures and their dynamics driven by external electric fields remains a challenge in understanding the underlying mechanisms and harness functionalities. Here, using Lorentz transmission electron microscopy combined with in situ electric and magnetic fields at liquid helium temperatures, we report the crystallographic orientation-dependent skyrmion responses to electric fields in thin slabs of magnetoelectric Cu2OSeO3. We show that electric fields not only stabilize the hexagonally packed skyrmion lattices in the entire sample in a hysteretic manner but also induce the rotation of their reciprocal vector discretely by 30°. The nonvolatile and energy-efficient skyrmion lattice control by electric fields demonstrated in this work provides an important foundation for designing skyrmion-based qubits and memory devices.
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Exceptional electronic, optoelectronic, and sensing properties of inorganic Cs-based perovskites are significantly influenced by the defect chemistry of the material. Although organic halide perovskites that have a polycrystalline structure are heavily studied, understanding of the defect properties at the grain boundaries (GB) of inorganic Cs-based perovskite quantum dots (QDs) is still limited. Here, morphology-dependent charge carrier dynamics of CsPbBr3 quantum dots at the nanoscale by performing scanning probe microscopy of thermally treated samples are investigated. The grain boundaries of defect-engineered samples show higher surface potential than the grain interiors under light illumination, suggesting an effective role of GBs as charge collection and transport channels. The lower density of crystallographic defects and lower trap density at GBs specifically of heat-treated samples cause insignificant dark current, lower local current hysteresis, and higher photocurrent, than the control samples. It is also shown that the decay rate of surface photovoltage of the heated sample is quicker than the control sample, which implies a considerable impact of ion migration on the relaxation dynamic of photogenerated charge carriers. These findings reveal that the annealing process is an effective strategy to control not only the morphology but also the optoelectrical properties of GB defects, and the dynamic of ion migration. Understanding the origin of photoelectric activity in this material allows for designing and engineering optoelectronic QD devices with enhanced functionality.
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Considering the immense societal and personal costs and suffering associated with multiple drug use or "polytoxicomania", better understanding of environmental and genetic causes is crucial. While previous studies focused on single risk factors and selected drugs, effects of early-accumulated environmental risks on polytoxicomania were never addressed. Similarly, evidence of genetic susceptibility to particular drugs is abundant, while genetic predisposition to polytoxicomania is unexplored. We exploited the GRAS data collection, comprising information on N~2000 deep-phenotyped schizophrenia patients, to investigate effects of early-life environmental risk accumulation on polytoxicomania and additionally provide first genetic insight. Preadult accumulation of environmental risks (physical or sexual abuse, urbanicity, migration, cannabis, alcohol) was strongly associated with lifetime polytoxicomania (p = 1.5 × 10-45; OR = 31.4), preadult polytoxicomania with OR = 226.6 (p = 1.0 × 10-33) and adult polytoxicomania with OR = 17.5 (p = 3.4 × 10-24). Parallel accessibility of genetic data from GRAS patients and N~2100 controls for genome-wide association (GWAS) and phenotype-based genetic association studies (PGAS) permitted the creation of a novel multiple GWAS-PGAS approach. This approach yielded 41 intuitively interesting SNPs, potentially conferring liability to preadult polytoxicomania, which await replication upon availability of suitable deep-phenotyped cohorts anywhere world-wide. Concisely, juvenile environmental risk accumulation, including cannabis and alcohol as starter/gateway drugs, strongly predicts polytoxicomania during adolescence and adulthood. This pivotal message should launch more effective sociopolitical measures to prevent this deleterious psychiatric condition.
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Estudio de Asociación del Genoma Completo , Esquizofrenia , Adulto , Estudios de Asociación Genética , Predisposición Genética a la Enfermedad/genética , Humanos , Polimorfismo de Nucleótido Simple/genéticaRESUMEN
Van der Waals (vdW) thio- and seleno-phosphates have recently gained considerable attention for the use as "active" dielectrics in two-dimensional/quasi-two-dimensional electronic devices. Bulk ionic conductivity in these materials has been identified as a key factor for the control of their electronic properties. However, direct evidence of specific ion species' migration at the nanoscale, particularly under electric fields, and its impact on material properties has been elusive. Here, we report on direct evidence of a phase-selective anisotropic Cu-ion-hopping mechanism in copper indium thiophosphate (CuInP2S6) through detailed scanning probe microscopy measurements. A two-step Cu-hopping path including a first intralayer hopping (in-plane) and second interlayer hopping (out-of-plane) crossing the vdW gap is unveiled. Evidence of electrically controlled Cu ion migration is further verified by nanoscale energy-dispersive X-ray spectroscopy (EDS) mapping. These findings offer new insight into anisotropic ionic manipulation in layered vdW ferroelectric/dielectric materials for emergent vdW electronic device design.
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Developing nano-ferroelectric materials with excellent piezoelectric performance for piezocatalysts used in water splitting is highly desired but also challenging, especially with respect to reaching large piezo-potentials that fully align with required redox levels. Herein, heteroepitaxial strain in BaTiO3 nanoparticles with a designed porous structure is successfully induced by engineering their surface reconstruction to dramatically enhance their piezoelectricity. The strain coherence can be maintained throughout the nanoparticle bulk, resulting in a significant increase of the BaTiO3 tetragonality and thus its piezoelectricity. Benefiting from high piezoelectricity, the as-synthesized blue-colored BaTiO3 nanoparticles possess a superb overall water-splitting activity, with H2 production rates of 159â µmol g-1 h-1 , which is almost 130 times higher than that of the pristine BaTiO3 nanoparticles. Thus, this work provides a generic approach for designing highly efficient piezoelectric nanomaterials by strain engineering that can be further extended to various other perovskite oxides, including SrTiO3 , thereby enhancing their potential for piezoelectric catalysis.
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For the fabrication of perovskite solar cells (PSCs) using a solution process, it is essential to understand the characteristics of the perovskite precursor solution to achieve high performance and reproducibility. The colloids (iodoplumbates) in the perovskite precursors under various conditions were investigated by UV-visible absorption, dynamic light scattering, photoluminescence, and total internal reflection fluorescence microscopy techniques. Their local structure was examined by in situ X-ray absorption fine structure studies. Perovskite thin films on a substrate with precursor solutions were characterized by transmission electron microscopy, X-ray diffraction analysis, space-charge-limited current, and Kelvin probe force microscopy. The colloidal properties of the perovskite precursor solutions were found to be directly correlated with the defect concentration and crystallinity of the perovskite film. This work provides guidelines for controlling perovskite films by varying the precursor solution, making it possible to use colloid-engineered lead halide perovskite layers to fabricate efficient PSCs.
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Autoantibodies of the IgG class against N-methyl-D-aspartate-receptor subunit-NR1 (NMDAR1-AB) were considered pathognomonic for anti-NMDAR encephalitis. This view has been challenged by the age-dependent seroprevalence (up to >20%) of functional NMDAR1-AB of all immunoglobulin classes found in >5000 individuals, healthy or affected by different diseases. These findings question a merely encephalitogenic role of NMDAR1-AB. Here, we show that NMDAR1-AB belong to the normal autoimmune repertoire of dogs, cats, rats, mice, baboons, and rhesus macaques, and are functional in the NMDAR1 internalization assay based on human IPSC-derived cortical neurons. The age dependence of seroprevalence is lost in nonhuman primates in captivity and in human migrants, raising the intriguing possibility that chronic life stress may be related to NMDAR1-AB formation, predominantly of the IgA class. Active immunization of ApoE-/- and ApoE+/+ mice against four peptides of the extracellular NMDAR1 domain or ovalbumin (control) leads to high circulating levels of specific AB. After 4 weeks, the endogenously formed NMDAR1-AB (IgG) induce psychosis-like symptoms upon MK-801 challenge in ApoE-/- mice, characterized by an open blood-brain barrier, but not in their ApoE+/+ littermates, which are indistinguishable from ovalbumin controls. Importantly, NMDAR1-AB do not induce any sign of inflammation in the brain. Immunohistochemical staining for microglial activation markers and T lymphocytes in the hippocampus yields comparable results in ApoE-/- and ApoE+/+ mice, irrespective of immunization against NMDAR1 or ovalbumin. These data suggest that NMDAR1-AB of the IgG class shape behavioral phenotypes upon access to the brain but do not cause brain inflammation on their own.
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Encefalitis Antirreceptor N-Metil-D-Aspartato/inmunología , Trastornos Mentales/inmunología , Receptores de N-Metil-D-Aspartato/inmunología , Adulto , Animales , Autoanticuerpos/inmunología , Barrera Hematoencefálica , Encéfalo/inmunología , Gatos , Perros , Femenino , Humanos , Inmunoglobulina G/genética , Inmunoglobulina G/inmunología , Masculino , Ratones , Proteínas del Tejido Nervioso/inmunología , Proteínas del Tejido Nervioso/metabolismo , Neuronas/inmunología , Primates , Ratas , Receptores de N-Metil-D-Aspartato/metabolismo , Estudios SeroepidemiológicosRESUMEN
Early exposure to negative environmental impact shapes individual behavior and potentially contributes to any mental disease. We reported previously that accumulated environmental risk markedly decreases age at schizophrenia onset. Follow-up of matched extreme group individuals (≤1 vs. ≥3 risks) unexpectedly revealed that high-risk subjects had >5 times greater probability of forensic hospitalization. In line with longstanding sociological theories, we hypothesized that risk accumulation before adulthood induces violent aggression and criminal conduct, independent of mental illness. We determined in 6 independent cohorts (4 schizophrenia and 2 general population samples) pre-adult risk exposure, comprising urbanicity, migration, physical and sexual abuse as primary, and cannabis or alcohol as secondary hits. All single hits by themselves were marginally associated with higher violent aggression. Most strikingly, however, their accumulation strongly predicted violent aggression (odds ratio 10.5). An epigenome-wide association scan to detect differential methylation of blood-derived DNA of selected extreme group individuals yielded overall negative results. Conversely, determination in peripheral blood mononuclear cells of histone-deacetylase1 mRNA as 'umbrella mediator' of epigenetic processes revealed an increase in the high-risk group, suggesting lasting epigenetic alterations. Together, we provide sound evidence of a disease-independent unfortunate relationship between well-defined pre-adult environmental hits and violent aggression, calling for more efficient prevention.
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Agresión/psicología , Violencia/psicología , Adolescente , Adulto , Experiencias Adversas de la Infancia , Epigénesis Genética/genética , Exposición a la Violencia/psicología , Femenino , Histona Desacetilasa 1/genética , Humanos , Masculino , Oportunidad Relativa , Factores de Riesgo , Esquizofrenia/epidemiología , Esquizofrenia/genéticaRESUMEN
BaTiO3-δ, i.e. oxygen-deficient barium titanate (BaTiO3), thin films grown on GdScO3(110) substrates with SrRuO3 conductive electrodes by pulsed laser deposition are studied by X-ray diffraction and conductive AFM to characterize their structure and nanoscale electronic properties. Bias- and time-dependent resistive switching measurements reveal a strong dependence on the oxygen vacancy concentration, which can be tuned by after-growth oxygen cooling conditions of thin films. The results indicate that the resistive switching properties of BaTiO3-δ can be enhanced by controlling oxygen deficiency and provide new insight for potential non-volatile resistive random-access memory (RRAM) applications.
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Amongst the most interesting phenomena in correlated oxide systems are the doping-driven competitions between energetically similar ground states found in, e.g., high-Tc superconductors and colossal magnetoresistance manganites. It has recently been reported that doped multiferroics also exhibit this generic concept of phase competition. Here, we employ photoelectron emission microscopy (PEEM) to demonstrate evidence of systematic changes in the electronic structure of Bi(1-x)Ca(x)FeO(3-δ) treated by electrically controlled hole carrier doping, the outcome of which clearly correlates with the local modulation of electronic conductivity observed in the same material.
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Single crystals of (001)-oriented 0.7Pb(Mg1/3Nb2/3)-0.3PbTiO3 (PMN-30PT) with a composition near the morphotropic phase boundary have attracted considerable attention due to their superior dielectric and electromechanical performance. Recently, a new alternating current (electric field) poling approach used for the enhancement of dielectric and piezoelectric properties. However, the microscopic domain variants that govern the performance, especially under high-frequency alternating current (AC) voltages, remain largely unexplored. In this work, the domain microstructure under AC poling reveals the presence of four monoclinic (MA) domain variants using a suite of scanning probe microscopy methods, and X-ray diffraction (XRD) reciprocal space mapping is tuned. It is reported on the emergence of hierarchical fine domains - needle-shaped, and 109° domain walls under applied high-frequency AC poling. Time-resolved Kelvin probe force microscopy (KPFM) reveals the charge dynamics and relaxation behavior of these needle domains and walls. The findings provide new insight and guidance to the domain engineering by high-frequency AC poling for the development of advanced transducer technology.
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Scanning probe microscopy (SPM) has enabled significant new insights into the nanoscale and microscale properties of solar cell materials and underlying working principles of photovoltaic and optoelectronic technology. Various SPM modes, including atomic force microscopy, Kelvin probe force microscopy, conductive atomic force microscopy, piezoresponse force microscopy, and scanning near-field optical microscopy, can be used for the investigation of electrical, optical and chemical properties of associated functional materials. A large body of work has improved the understanding of solar cell device processing and synthesis in close synergy with SPM investigations in recent years. This review provides an overview of SPM measurement capabilities and attainable insight with a focus on recently widely investigated halide perovskite materials.
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Mixed-halide wide-band gap perovskites (WBPs) still suffer from losses due to imperfections within the absorber and the segregation of halide ions under external stimuli. Herein, we design a multifunctional passivator (MFP) by mixing bromide salt, formamidinium bromide (FABr) with a p-type self-assembled monolayer (SAM) to target the nonradiative recombination pathways. Photoluminescence measurement shows considerable suppression of nonradiative recombination rates after treatment with FABr. However, WBPs still remained susceptible to halide segregation for which the addition of 25% p-type SAM was effective to decelerate segregation. It is observed that FABr can act as a passivating agent of the donor impurities, shifting the Fermi-level (Ef) toward the mid-band gap, while p-type SAM could cause an overweight of Ef toward the valence band. Favorable band bending at the interface could prevent the funneling of carriers toward I-rich clusters. Instead, charge carriers funnel toward an integrated SAM, preventing the accumulation of polaron-induced strain on the lattice. Consequently, n-i-p structured devices with an optimal MFP treatment show an average open-circuit voltage (VOC) increase of about 20 mV and fill factor (FF) increase by 4% compared with the control samples. The unencapsulated devices retained 95% of their initial performance when stored at room temperature under 40% relative humidity for 2800 h.
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Two-dimensional (2D) semiconductor-based vertical-transport field-effect transistors (VTFETs) - in which the current flows perpendicularly to the substrate surface direction - are in the drive to surmount the stringent downscaling constraints faced by the conventional planar FETs. However, low-power device operation with a sub-60 mV/dec subthreshold swing (SS) at room temperature along with an ultra-scaled channel length remains challenging for 2D semiconductor-based VTFETs. Here, we report steep-slope VTFETs that combine a gate-controllable van der Waals heterojunction and a metal-filamentary threshold switch (TS), featuring a vertical transport channel thinner than 5 nm and sub-thermionic turn-on characteristics. The integrated TS-VTFETs were realised with efficient current switching behaviours, exhibiting a current modulation ratio exceeding 1 × 108 and an average sub-60 mV/dec SS over 6 decades of drain current. The proposed TS-VTFETs with excellent area- and energy-efficiency could help to tackle the performance degradation-device downscaling dilemma faced by logic transistor technologies.
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Reducing non-radiative recombination and addressing band alignment mismatches at interfaces remain major challenges in achieving high-performance wide-bandgap perovskite solar cells. This study proposes the self-organization of a thin two-dimensional (2D) perovskite BA2PbBr4 layer beneath a wide-bandgap three-dimensional (3D) perovskite Cs0.17FA0.83Pb(I0.6Br0.4)3, forming a 2D/3D bilayer structure on a tin oxide (SnO2) layer. This process is driven by interactions between the oxygen vacancies on the SnO2 surface and hydrogen atoms of the n-butylammonium cation, aiding the self-assembly of the BA2PbBr4 2D layer. The 2D perovskite acts as a tunneling layer between SnO2 and the 3D perovskite, neutralizing the energy level mismatch and reducing non-radiative recombination. This results in high power conversion efficiencies of 21.54% and 19.16% for wide-bandgap perovskite solar cells with bandgaps of 1.7 and 1.8 eV, with open-circuit voltages over 1.3 V under 1-Sun illumination. Furthermore, an impressive efficiency of over 43% is achieved under indoor conditions, specifically under 200 lux white light-emitting diode light, yielding an output voltage exceeding 1 V. The device also demonstrates enhanced stability, lasting up to 1,200 hours.
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Crackling noise is a scale-invariant phenomenon found in various driven nonlinear dynamical material systems as a response to external stimuli such as force or external fields. Jerky material movements in the form of avalanches can span many orders of magnitude in size and follow universal scaling rules described by power laws. The concept was originally studied as Barkhausen noise in magnetic materials and now is used in diverse fields from earthquake research and building materials monitoring to fundamental research involving phase transitions and neural networks. Here, we demonstrate a method for nanoscale crackling noise measurements based on AFM nanoindentation, where the AFM probe can be used to study the crackling of individual nanoscale features, a technique we call crackling noise microscopy. The method is successfully applied to investigate the crackling of individual topological defects, i.e. ferroelectric domain walls. We show that critical exponents for avalanches are altered at these nanoscale features, leading to a suppression of mixed-criticality, which is otherwise present in domains. The presented concept opens the possibility of investigating the crackling of individual nanoscale features in a wide range of material systems.
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Emergent magnetism in van der Waals materials offers exciting opportunities in fabricating atomically thin spintronic devices. One pertinent obstacle has been the low transition temperatures (Tc) inherent to these materials, precluding room temperature applications. Here, we show that large structural gradients found in highly strained nanoscale wrinkles in Cr2Ge2Te6 (CGT) lead to significant increases of Tc. Magnetic force microscopy was utilized in characterizing multiple strained CGT nanostructures leading to experimental evidence of elevated Tc, depending on the strain percentage estimated from finite element analysis. Our findings are further supported by ab initio and DFT studies of the strained material, which indicates that strain directly augments the ferromagnetic coupling between Cr atoms in CGT, influenced by superexchange interaction; this provides strong insight into the mechanism of the enhanced magnetism and Tc.