Local and nonlocal Fraunhofer-like pattern from an edge-stepped topological surface Josephson current distribution.

We report a surface-dominant Josephson effect in superconductor-topological insulator-superconductor (S-TI-S) devices, where a Bi1.5Sb0.5Te1.7Se1.3 (BSTS) crystal flake was adopted as an intervening TI between Al superconducting electrodes. We observed a Fraunhofer-type critical current modulation in a perpendicular magnetic field in an Al-TI-Al junction for both local and nonlocal current biasing. Fraunhofer-type modulation of the differential resistance was also observed in a neighboring Au-TI-Au normal junction when it was nonlocally biased by the Al-TI-Al junction. In all cases, the Fraunhofer-like signal was highly robust to the magnetic field up to the critical field of the Al electrodes, corresponding to the edge-stepped nonuniform supercurrent density arising from the top and rough side surfaces of the BSTS flake, which strongly suggests that the Josephson coupling in a TI is established through the surface conducting channels that are topologically protected.

High-mobility graphene nanoribbons prepared using polystyrene dip-pen nanolithography.

Graphene nanoribbons (GNRs) are fabricated by dip-pen nanolithography and polystyrene etching techniques on a SrTiO(3)/Nb-doped SrTiO(3) substrate. A GNR field-effect transistor (FET) shows bipolar FET behavior with a high mobility and low operation voltage at room temperature because of the atomically flat surface and the large dielectric constant of the insulating SrTiO(3) layer, respectively.

Determination of the photocarrier diffusion length in intrinsic Ge nanowires.

We quantitatively determined the photocarrier diffusion length in intrinsic Ge nanowires (NWs) using scanning photocurrent microscopy. Specifically, the spatial mapping of one-dimensional decay in the photocurrent along the Ge NWs under the scanning laser beam (λ= 532 nm) was analyzed in a one-dimensional diffusion rate equation to extract the diffusion length of ~4-5 µm. We further attempt to determine the photocarrier lifetime under a finite bias across the Ge NWs, and discuss the role of surface scattering.

Single-spin readout in a double quantum dot including a micromagnet.

We use photon-assisted tunneling (PAT) and an inhomogeneous Zeeman field to demonstrate spin-selective PAT readout with a double quantum dot. The inhomogeneous Zeeman field is generated by a proximal micromagnet, which provides different stray fields between the two dots, resulting in an energy difference between the interdot PAT of the up-spin state and that of the down-spin state. We apply various external magnetic fields to modify the relative filling weight between the up-spin and down-spin states and detect it by using a charge detection technique to probe the PAT induced charge delocalization in the double dot.

Tuning locality of pair coherence in graphene-based Andreev interferometers.

We report on gate-tuned locality of superconductivity-induced phase-coherent magnetoconductance oscillations in a graphene-based Andreev interferometer, consisting of a T-shaped graphene bar in contact with a superconducting Al loop. The conductance oscillations arose from the flux change through the superconducting Al loop, with gate-dependent Fraunhofer-type modulation of the envelope. We confirm a transitional change in the character of the pair coherence, between local and nonlocal, in the same device as the effective length-to-width ratio of the device was modulated by tuning the pair-coherence length ξT in the graphene layer.

A nonvolatile memory device made of a ferroelectric polymer gate nanodot and a single-walled carbon nanotube.

We demonstrate a field-effect nonvolatile memory device made of a ferroelectric copolymer gate nanodot and a single-walled carbon nanotube (SW-CNT). A position-controlled dip-pen nanolithography was performed to deposit a poly(vinylidene fluoride-ran-trifluoroethylene) (PVDF-TrFE) nanodot onto the SW-CNT channel with both a source and drain for field-effect transistor (FET) function. PVDF-TrFE was chosen as a gate dielectric nanodot in order to efficiently exploit its bipolar chemical nature. A piezoelectric force microscopy study confirmed the canonical ferroelectric responses of the PVDF-TrFE nanodot fabricated at the center of the SW-CNT channel. The two distinct ferroelectric polarization states with the stable current retention and fatigue-resistant characteristics make the present PVDF-TrFE-based FET suitable for nonvolatile memory applications.