GaAs Mid-IR Electrically Tunable Metasurfaces.

In this work, we explore III-V based metal-semiconductor-metal structures for tunable metasurfaces. We use an epitaxial transfer technique to transfer a III-V thin film directly on metallic surfaces, realizing III-V metal-semiconductor-metal (MSM) structures without heavily doped semiconductors as substitutes for metal layers. The device platform consists of gold metal layers with a p-i-n GaAs junction. The target resonance wavelength can be tuned by modifying the geometry of the top metal grating on the GaAs, while systematic resonance tunability has been shown through the modulation of various carrier concentration injections in the mid-IR range. Electrically tunable metasurfaces with multilevel biasing can serve as a fundamental building block for electrically tunable metasurfaces. We believe that our demonstration can contribute to understanding the optical tuning of III-V under various biased conditions, inducing changes in metasurfaces.

Symmetry breaking of dark-mode metamaterials for voltage-switchable infrared absorption.

We propose electrically reconfigurable absorbers with switchable narrowband resonances in the infrared. Our absorbers consist of two coupled, identical resonators and support a dark supermode. We show that by dynamically breaking the symmetry of the system, the dark supermode can be made to couple to an incoming plane wave, producing a narrowband absorption peak in the spectrum. We use this effect to design and optimize absorbers consisting of coupled metal-insulator-metal resonators based on gallium arsenide. We show that the switching functionality of the designed device is robust to fabrication imperfections, and that it additionally serves as a spectrally tunable absorber. Our results suggest exciting possibilities for designing next-generation reconfigurable absorbers that could benefit several applications, such as energy harvesting and sensing.

Monolithic III-V on Metal for Thermal Metasurfaces.

It has been proposed that metal-semiconductor-metal (MSM) structures can be used to tune the absorptivity of a metasurface at infrared wavelengths. Indium arsenide (InAs) is a low-band-gap, high-electron-mobility semiconductor that may enable rapid index tuning for dynamic control over the infrared spectrum. However, direct growth of III-V thin films on top of metals has typically resulted in small-grain, polycrystalline materials that are not amenable to high-quality devices. Previously, epitaxial wafers were used for this purpose. However, the epitaxial constraints required that InAs be used for both the tuning layer and the bottom "metallic" layer, limiting the range of accessible designs. In this work, we show a demonstration of direct growth of single-crystalline InAs on metal to build tunable absorbers/emitters in the infrared regime. The growth was carried out at a temperature of 300 °C by the low temperature templated liquid phase (LT-TLP) method. The size of InAs single-crystalline mesas is ∼2500 µm2, enabling the desired device sizes. The proposed growth and device enable scalable and tunable infrared devices for various thermal-photonic applications.