Grafting of Organophosphonic Acid Monolayers on Hydrogen-Terminated Silicon Surface and Secondary Functionalization in Supercritical Carbon Dioxide Media.

The monolayer grafting on the oxide-free Si surface is challenging due to vulnerability of the surface against oxide formation in an ambient atmosphere. Most of the conventional studies focused on organic solvent-based chemistry and solvent and substrate interfaces, and residual solvents after the monolayer grafting play a key role in producing the highly stable monolayers. CO2 in its supercritical state (SCCO2) provides an elegant engineering solution for the problem faced as it can be used as inert processing environment and as carrier fluid for monolayer grafting taking up the role of organic solvents. In this work, monolayers of alkyl organophosphonic acids (OPAs) and functional OPAs were grafted on hydrogen-terminated oxide-free Si surfaces using the SCCO2 process. Grafted monolayers were physically and chemically characterized to verify the successful monolayer formation and determine the nature of the covalent binding configuration on the surface. To broaden the prospects of practical utility of the process and the OPA monolayer, the (3-bromopropyl)phosphonic acid (BPPA) monolayer was demonstrated to undergo secondary functionalization by terminal group substitution to convert the Br terminal group to the OH terminal group and secondary monolayer grafting to assemble 4-fluorothiophenol on top of the BPPA monolayer. The ability of monolayers to sustain secondary functionalization processing qualitatively hints toward ordered and stable monolayers of OPAs. The developed SCCO2 process in this work presents a single-step, green, and scalable method to graft the OPA monolayer on oxide-free Si which can employed in the future for monolayer doping, highly selective biochemical sensors, and targeted biological interactions.

Universal Single-Step Approach to the Immobilization of Cyclodextrins in a Supercritical Medium for Capturing Drug, Dye, and Metal Nanoclusters.

By utilizing nanoreactor-like structures, the immobilization of macromolecules such as calixarenes and cyclodextrins (CD) with bucket-like structures provides new possibilities for engineered surface-molecule systems. The practical use of any molecular system depends on the availability of a universal procedure for immobilizing molecules with torus-like structures on various surfaces while maintaining identical operating parameters. There are currently several steps, including toxic solvent-based approaches using modified ß-CD to covalently attach to surfaces with multistep reactions. However, the existing multistep process results in molecular orientation, restricts the accessibility of the hydrophobic barrel of ß-CD's for practical use, and is effectively unable to use the surfaces immobilized with ß-CD for a variety of applications. In this study, it was demonstrated that ß-CD attached to the oxide-based semiconductor and metal surfaces through a condensation reaction between the hydroxyl-terminated oxide-based semiconductor/metal oxide and ß-CD in supercritical carbon dioxide (SCCO2) as a medium. The primary benefit of SCCO2-assisted grafting of unmodified ß-CD on various oxide-based metal and semiconductor surfaces is that it is a simple, efficient, one-step process and that it is ligand-free, scalable, substrate-independent, and uses minimal energy. Various physical microscopy and chemical spectroscopic methods were used to analyze the grafted ß-CD oligomers. The application of the grafted ß-CD films was demonstrated by the immobilization of rhodamine B (RhB), a dye, and dopamine, a drug. The in situ nucleation and growth of silver nanoclusters (AgNCs) in the molecular systems were studied for antibacterial and tribological properties by utilizing the guest-host interaction ability of ß-CD.

Supramolecular structure of self-assembled monolayers of ferrocenyl terminated n-alkanethiolates on gold surfaces.

It is important to understand the structure of redox-active self-assembled monolayers (SAMs) down to the atomic scale, since these SAMS are widely used as model systems in studies of mechanisms of charge transport or to realize electronic functionality in molecular electronic devices. We studied the supramolecular structure of SAMs of n-alkanethiolates with ferrocenyl (Fc) end groups (S(CH2)nFc, n = 3 or 4) on Au(111) by scanning tunneling microscopy (STM). In this system, the tilt angle of the Fc units with respect to the surface normal (α) depends on the value of n because the Au-S-C bond angle is fixed. The ordered domains of the SAMs were imaged by STM after annealing at 70 °C at ultrahigh vacuum conditions. High resolution electron energy loss spectroscopy (HREELS) and cyclic voltammetry show that this annealing step only removed physisorbed material and did not affect the structure of the SAM. The STM images revealed the presence of row defects at intervals of 4 nm, that is, six molecules. We determined by near edge X-ray absorption fine structure spectroscopy (NEXAFS) that the Fc units of the SAMs of SC3Fc are more parallel to the Au(111) plane with a tilt angle α = 60.2° than the Fc units of SC4Fc SAMs (α = 45.4°). These tilt angles are remarkably close to the tilt angles measured by X-ray diffraction data of bulk crystals (bc-plane). Based on our data, we conclude that the molecules are standing up and the SAMs pack into lattices that are distorted from their bulk crystal structures (because of the build-up stain due to the differences in size between the Fc units and thiolate anchoring groups).

Surface Nanostructure Formation and Atomic-Scale Templates for Nanodevices.

The holy grail in nanoelectronics is the construction of nanodevices with high density, low cost, and high performance per device and per integrated circuit. One approach is the fabrication of surface nanostructures and atomic-scale templates via the autonomous assembly of atoms and/or molecules on well-defined surfaces. To steer the atomic or molecular growth processes and create a wide range of surface nanostructures with desired properties, a comprehensive understanding of the mechanisms that control the surface self-assembly processes is required. The capability to manipulate the nanodevices at the submolecular level with good controllability is also of paramount importance. This review highlights some key recent developments in the fabrication of low-dimensional nanostructures based on supramolecular self-assembly on predefined surfaces, with particular emphasis on the rapidly expanding field of two-dimensional materials. Special attention is also given to the latest progress in single-molecule manipulation for future device applications.

Highly Stable Bonding of Thiol Monolayers to Hydrogen-Terminated Si via Supercritical Carbon Dioxide: Toward a Super Hydrophobic and Bioresistant Surface.

Oxide-free silicon chemistry has been widely studied using wet-chemistry methods, but for emerging applications such as molecular electronics on silicon, nanowire-based sensors, and biochips, these methods may not be suitable as they can give rise to defects due to surface contamination, residual solvents, which in turn can affect the grafted monolayer devices for practical applications. Therefore, there is a need for a cleaner, reproducible, scalable, and environmentally benign monolayer grafting process. In this work, monolayers of alkylthiols were deposited on oxide-free semiconductor surfaces using supercritical carbon dioxide (SCCO2) as a carrier fluid owing to its favorable physical properties. The identity of grafted monolayers was monitored with Fourier transform infrared (FTIR) spectroscopy, high-resolution X-ray photoelectron spectroscopy (HRXPS), XPS, atomic force microscopy (AFM), contact angle measurements, and ellipsometry. Monolayers on oxide-free silicon were able to passivate the surface for more than 50 days (10 times than the conventional methods) without any oxide formation in ambient atmosphere. Application of the SCCO2 process was further extended by depositing alkylthiol monolayers on fragile and brittle 1D silicon nanowires (SiNWs) and 2D germanium substrates. With the recent interest in SiNWs for biological applications, the thiol-passivated oxide-free silicon nanowire surfaces were also studied for their biological response. Alkylthiol-functionalized SiNWs showed a significant decrease in cell proliferation owing to their superhydrophobicity combined with the rough surface morphology. Furthermore, tribological studies showed a sharp decrease in the coefficient of friction, which was found to be dependent on the alkyl chain length and surface bond. These studies can be used for the development of cost-effective and highly stable monolayers for practical applications such as solar cells, biosensors, molecular electronics, micro- and nano- electromechanical systems, antifouling agents, and drug delivery.

Application of Organophosphonic Acids by One-Step Supercritical CO2 on 1D and 2D Semiconductors: Toward Enhanced Electrical and Sensing Performances.

Formation of dense monolayers with proven atmospheric stability using simple fabrication conditions remains a major challenge for potential applications such as (bio)sensors, solar cells, surfaces for growth of biological cells, and molecular, organic, and plastic electronics. Here, we demonstrate a single-step modification of organophosphonic acids (OPA) on 1D and 2D structures using supercritical carbon dioxide (SCCO2) as a processing medium, with high stability and significantly shorter processing times than those obtained by the conventional physisorption-chemisorption method (2.5 h vs 48-60 h).The advantages of this approach in terms of stability and atmospheric resistivity are demonstrated on various 2D materials, such as indium-tin-oxide (ITO) and 2D Si surfaces. The advantage of the reported approach on electronic and sensing devices is demonstrated by Si nanowire field effect transistors (SiNW FETs), which have shown a few orders of magnitude higher electrical and sensing performances, compared with devices obtained by conventional approaches. The compatibility of the reported approach with various materials and its simple implementation with a single reactor makes it easily scalable for various applications.

One-step synthesis of zero-dimensional hollow nanoporous gold nanoparticles with enhanced methanol electrooxidation performance.

Nanoporous gold with networks of interconnected ligaments and highly porous structure holds stimulating technological implications in fuel cell catalysis. Current syntheses of nanoporous gold mainly revolve around de-alloying approaches that are generally limited by stringent and harsh multistep protocols. Here we develop a one-step solution phase synthesis of zero-dimensional hollow nanoporous gold nanoparticles with tunable particle size (150-1,000 nm) and ligament thickness (21-54 nm). With faster mass diffusivity, excellent specific electroactive surface area and large density of highly active surface sites, our zero-dimensional nanoporous gold nanoparticles exhibit ~1.4 times enhanced catalytic activity and improved tolerance towards carbonaceous species, demonstrating their superiority over conventional nanoporous gold sheets. Detailed mechanistic study also reveals the crucial heteroepitaxial growth of gold on the surface of silver chloride templates, implying that our synthetic protocol is generic and may be extended to the synthesis of other nanoporous metals via different templates.

Electronically transparent graphene barriers against unwanted doping of silicon.

Diffusion barriers prevent materials from intermixing (e.g., undesired doping) in electronic devices. Most diffusion barrier materials are often very specific for a certain combination of materials and/or change the energetics of the interface because they are insulating or add to the contact resistances. This paper presents graphene (Gr) as an electronically transparent, without adding significant resistance to the interface, diffusion barrier in metal/semiconductor devices, where Gr prevents Au and Cu from diffusion into the Si, and unintentionally dope the Si. We studied the electronic properties of the n-Si(111)/Gr/M Schottky barriers (with and without Gr and M=Au or Cu) by I(V) measurements and at the nanoscale by ballistic electron emission spectroscopy (BEEM). The layer of Gr does not change the Schottky barrier of these junctions. The Gr barrier was stable at 300 °C for 1 h and prevented the diffusion of Cu into n-Si(111) and the formation of Cu3Si. Thus, we conclude that the Gr is mechanically and chemically stable enough to withstand the harsh fabrication methods typically encountered in clean room processes (e.g., deposition of metals in high vacuum conditions at high temperatures), it is electronically transparent (it does not change the energetics of the Si/Au or Si/Cu Schottky barriers), and effectively prevented diffusion of the Cu or Au into the Si at elevated temperatures and vice versa.

Stable Organic Monolayers on Oxide-Free Silicon/Germanium in a Supercritical Medium: A New Route to Molecular Electronics.

Oxide-free Si and Ge surfaces have been passivated and modified with organic molecules by forming covalent bonds between the surfaces and reactive end groups of linear alkanes and aromatic species using single-step deposition in supercritical carbon dioxide (SCCO2). The process is suitable for large-scale manufacturing due to short processing times, simplicity, and high resistance to oxidation. It also allows the formation of monolayers with varying reactive terminal groups, thus enabling formation of nanostructures engineered at the molecular level. Ballistic electron emission microscopy (BEEM) spectra performed on the organic monolayer on oxide-free silicon capped by a thin gold layer reveals for the first time an increase in transmission of the ballistic current through the interface of up to three times compared to a control device, in contrast to similar studies reported in the literature suggestive of oxide-free passivation in SCCO2. The SCCO2 process combined with the preliminary BEEM results opens up new avenues for interface engineering, leading to molecular electronic devices.

Effect of molecule-substrate interaction on thin-film structures and molecular orientation of pentacene on silver and gold.

Evaporated pentacene thin films with thicknesses from several nm to 150 nm on gold and silver substrates have been studied by ultraviolet photoelectron spectroscopy (UPS), near-edge X-ray absorption fine structure (NEXAFS), scanning tunneling microscopy (STM), and atomic force microscopy (AFM). It was found that pentacene thin-film structures, particularly their molecular orientations, are strongly influenced by the metal substrates. UPS measurements revealed a distinct change in the valence band structures of pentacene on Au compared to those on Ag, which is attributed to the different packing between adjacent molecules. Using NEXAFS, we observed 74+/-5 degrees and 46+/-5 degrees molecular tilt angles on Ag and Au, respectively, for all measured thicknesses. We propose that pentacene molecules stand up on the surface and form the "thin-film phase" structure on Ag. On Au, pentacene films grow in domains with molecules either lying flat or standing up on the substrate. Such a mixture of two crystalline phases leads to an average tilt angle of 46 degrees for the whole film and the change in valence band structures. STM and distance-voltage (z-V) spectroscopy studies confirm the existence of two crystalline phases on Au with different conducting properties. z-V spectra on the low conducting phase clearly indicate its nature as "thin-film phase".

Switching in organic devices caused by nanoscale Schottky barrier patches.

We have identified a possible electronic origin of metal filaments, invoked to explain the switching behavior of organic devices. Interfaces of two representative organics polyparaphenylene (PPP) and poly(2-methoxy-5-2-ethyl-hexyloxy-1,4-phenylenevinylene) with Ag are investigated using ballistic emission microscopy. Nanometer scale spatial nonuniformity of carrier injection is observed in ballistic electron emission microscopy images of both interfaces. The measured Schottky barrier (SB) appears to be consistent with metal states tailing into the gap of the PPP. We find that the SB values exhibit a distribution, even for the diodes with low ideality factors. The implications of this distribution on the measured physical properties of the diode are discussed, in light of work on devices of similar geometry, published in the literature. We also demonstrate that patches of low SB are likely to nucleate current filaments which can cause local ionization and are reported to be responsible for the switching behavior observed in metal-organic, metal-CuS and Ag-AgSe structures.