Fine Mapping and Identification of SmAPRR2 Regulating Rind Color in Eggplant (Solanum melongena L.).

Rind color is an economically important agronomic trait in eggplant that impacts consumer preferences. In this study, bulked segregant analysis and competitive allele-specific PCR were employed to identify the candidate gene for eggplant rind color through constructing a 2794 F2 population generated from a cross between "BL01" (green pericarp) and "B1" (white pericarp). Genetic analysis of rind color revealed that a single dominant gene controls green color of eggplant peel. Pigment content measurement and cytological observations demonstrated that chlorophyll content and chloroplast number in BL01 were higher than in B1. A candidate gene (EGP19168.1) was fine-mapped to a 20.36 Kb interval on chromosome 8, which was predicted to encode the two-component response regulator-like protein Arabidopsis pseudo-response regulator2 (APRR2). Subsequently, allelic sequence analysis revealed that a SNP deletion (ACT→AT) in white-skinned eggplant led to a premature termination codon. Genotypic validation of 113 breeding lines using the Indel marker closely linked to SmAPRR2 could predict the skin color (green/white) trait with an accuracy of 92.9%. This study will be valuable for molecular marker-assisted selection in eggplant breeding and provides theoretical foundation for analyzing the formation mechanism of eggplant peel color.

Weighted Gene Co-Expression Analysis Network-Based Analysis on the Candidate Pathways and Hub Genes in Eggplant Bacterial Wilt-Resistance: A Plant Research Study.

Solanum melongena L. (eggplant) bacterial wilt is a severe soil borne disease. Here, this study aimed to explore the regulation mechanism of eggplant bacterial wilt-resistance by transcriptomics with weighted gene co-expression analysis network (WGCNA). The different expression genes (DEGs) of roots and stems were divided into 21 modules. The module of interest (root: indianred4, stem: coral3) with the highest correlation with the target traits was selected to elucidate resistance genes and pathways. The selected module of roots and stems co-enriched the pathways of MAPK signalling pathway, plant pathogen interaction, and glutathione metabolism. Each top 30 hub genes of the roots and stems co-enriched a large number of receptor kinase genes. A total of 14 interesting resistance-related genes were selected and verified with quantitative polymerase chain reaction (qPCR). The qPCR results were consistent with those of WGCNA. The hub gene of EGP00814 (namely SmRPP13L4) was further functionally verified; SmRPP13L4 positively regulated the resistance of eggplant to bacterial wilt by qPCR and virus-induced gene silencing (VIGS). Our study provides a reference for the interaction between eggplants and bacterial wilt and the breeding of broad-spectrum and specific eggplant varieties that are bacterial wilt-resistant.

Parameter study of the high temperature MOCVD numerical model for AlN growth using orthogonal test design.

We investigated the process parameters of the high temperature MOCVD (HT-MOCVD) numerical model for the AlN growth based on CFD simulation using orthogonal test design. It is believed that high temperature growth condition is favorable for improving efficiency and crystallization quality for AlN film, while the flow field in the HT-MOCVD reactor is closely related to the process parameters, which will affect the uniformity of the film. An independently developed conceptual HT-MOCVD reactor was established for the AlN growth to carry out the CFD simulation. To evaluate the role of the parameters systematically and efficiently on the growth uniformity, the process parameters based on CFD simulation were analyzed using orthogonal test design. The advantages of the range, matrix and variance methods were considered and the results were analyzed comprehensively and the optimal process parameters were obtained as follows, susceptor rotational speed 400 rpm, operating pressure 40 Torr, gas flow rate 50 slm, substrate temperature 1550 K.

Spontaneous Interfacial Dipole Orientation Effect of Acetic Acid Solubilized PFN.

Poly[(9,9-dioctyl-2,7-fluorene)- alt-(9,9-bis(3'-( N, N-dimethylamino)propyl)-2,7-fluorene)] (PFN) is a very important interfacial modifier in organic photovoltaic and organic light-emitting diodes to improve device performance, where their molecular dipole has been regarded to play a key role. In this work, we have reported a spontaneous interfacial dipole orientation effect in acetic acid dissolved PFN, which is strongly related to the interfacial dipole and the corresponding device performance. In direct spin-coating, the interfacial dipole is 1.08 Debye with interfacial contact angle 84.8°, whereas after self-assembly of 10 min, the interfacial dipole is balanced at 4.21 Debye, with the interfacial contact angle decreasing to 76.8°. Without strong interaction with the substrate, the energy of upward amine groups is much lower than that of downward ones in theoretical simulation, which would be the driving force of this spontaneous process. The preferred conformations of PFN molecules on hydroxylated substrates have over 99% amine groups outward, and the theoretical average dipole calculated from the weight of these conformations is 4.48 Debye, which is close to the experimental result and indicates a high ratio of upward amine groups in self-assembled films. This effect obviously changes the device performance, such as an obvious positive threshold voltage shift in transistors and a distinct increase of the short-circuit current/open-circuit voltage in organic solar cells. This effect provides a deeper understanding of the PFN interlayer mechanism and has potential application in optoelectronic devices.