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1.
Sci Rep ; 10(1): 9721, 2020 Jun 16.
Artigo em Inglês | MEDLINE | ID: mdl-32546737

RESUMO

Applications of correlated vanadium dioxides VO2(A) and VO2(B) in electrical devices are limited due to the lack of effective methods for tuning their fundamental properties. We find that the resistivity of VO2(A) and VO2(B) is widely tunable by doping them with tungsten ions. When x < 0.1 in V1-xWxO2(A), the resistivity decreases drastically by four orders of magnitude with increasing x, while that of V1-xWxO2(B) shows the opposite behaviour. Using spectroscopic ellipsometry and X-ray photoemission spectroscopy, we propose that correlation effects are modulated by either chemical-strain-induced redistribution of V-V distances or electron-doping-induced band filling in V1-xWxO2(A), while electron scattering induced by disorder plays a more dominant role in V1-xWxO2(B). The tunable resistivity makes correlated VO2(A) and VO2(B) appealing for next-generation electronic devices.

2.
Sci Rep ; 10(1): 22340, 2020 Dec 18.
Artigo em Inglês | MEDLINE | ID: mdl-33339856

RESUMO

We report on optical spectroscopic study of the Sr3(Ir1-xRux)2O7 system over a wide doping regime. We find that the changes in the electronic structure occur in the limited range of the concentration of Ru ions where the insulator-metal transition occurs. In the insulating regime, the electronic structure associated with the effective total angular momentum Jeff = 1/2 Mott state remains robust against Ru doping, indicating the localization of the doped holes. Upon entering the metallic regime, the Mott gap collapses and the Drude-like peak with strange metallic character appears. The evolution of the electronic structure registered in the optical data can be explained in terms of a percolative insulator-metal transition. The phonon spectra display anomalous doping evolution of the lineshapes. While the phonon modes of the compounds deep in the insulating and metallic regimes are almost symmetric, those of the semiconducting compound with x = 0.34 in close proximity to the doping-driven insulator-metal transition show a pronounced asymmetry. The temperature evolution of the phonon modes of the x = 0.34 compound reveals the asymmetry is enhanced in the antiferromagnetic state. We discuss roles of the S = 1 spins of the Ru ions and charge excitations for the conspicuous lineshape asymmetry of the x = 0.34 compound.

3.
Sci Rep ; 6: 32632, 2016 09 07.
Artigo em Inglês | MEDLINE | ID: mdl-27599573

RESUMO

We report on infrared spectroscopic studies of the electronic response of the (Sr1-xLax)3Ir2O7 system. Our experiments revealed hallmarks of strong electronic correlations in the evolution of the electronic response across the filling-controlled insulator-metal transition. We observed a collapse of the Jeff = 1/2 Mott gap accompanying the transfer of the spectral weight from the high-energy region to the gap region with electron doping. The intraband conductivity at the metallic side of the transition was found to consist of coherent Drude-like and incoherent responses. The sum rule and the extended Drude model analyses further indicated a large mass enhancement. Our results demonstrate a critical role of the electronic correlations in the charge dynamics of the (Sr1-xLax)3Ir2O7 system.

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