Lattice Engineering via Transition Metal Ions for Boosting Photoluminescence Quantum Yields of Lead-Free Layered Double Perovskite Nanocrystals.

Lead-free layered double perovskite nanocrystals (NCs), i.e., Cs4M(II)M(III)2Cl12, have recently attracted increasing attention for potential optoelectronic applications due to their low toxicity, direct bandgap nature, and high structural stability. However, the low photoluminescence quantum yield (PLQY, <1%) or even no observed emissions at room temperature have severely blocked the further development of this type of lead-free halide perovskites. Herein, two new layered perovskites, Cs4CoIn2Cl12 (CCoI) and Cs4ZnIn2Cl12 (CZnI), are successfully synthesized at the nanoscale based on previously reported Cs4CuIn2Cl12 (CCuI) NCs, by tuning the M(II) site with different transition metal ions for lattice tailoring. Benefiting from the formation of more self-trapped excitons (STEs) in the distorted lattices, CCoI and CZnI NCs exhibit significantly strengthened STE emissions toward white light compared to the case of almost non-emissive CCuI NCs, by achieving PLQYs of 4.3% and 11.4% respectively. The theoretical and experimental results hint that CCoI and CZnI NCs possess much lower lattice deformation energies than that of reference CCuI NCs, which are favorable for the recombination of as-formed STEs in a radiative way. This work proposes an effective strategy of lattice engineering to boost the photoluminescent properties of lead-free layered double perovskites for their future warm white light-emitting applications.

Antimony-Bismuth Alloying: The Key to a Major Boost in the Efficiency of Lead-Free Perovskite-Inspired Photovoltaics.

The perovskite-inspired Cu2 AgBiI6 (CABI) material has been gaining increasing momentum as photovoltaic (PV) absorber due to its low toxicity, intrinsic air stability, direct bandgap, and a high absorption coefficient in the range of 105  cm-1 . However, the power conversion efficiency (PCE) of existing CABI-based PVs is still seriously constrained by the presence of both intrinsic and surface defects. Herein, antimony (III) (Sb3+ ) is introduced into the octahedral lattice sites of the CABI structure, leading to CABI-Sb with larger crystalline domains than CABI. The alloying of Sb3+ with bismuth (III) (Bi3+ ) induces changes in the local structural symmetry that dramatically increase the formation energy of intrinsic defects. Light-intensity dependence and electron impedance spectroscopic studies show reduced trap-assisted recombination in the CABI-Sb PV devices. CABI-Sb solar cells feature a nearly 40% PCE enhancement (from 1.31% to 1.82%) with respect to the CABI devices mainly due to improvement in short-circuit current density. This work will promote future compositional design studies to enhance the intrinsic defect tolerance of next-generation wide-bandgap absorbers for high-performance and stable PVs.

Enhancing the Microstructure of Perovskite-Inspired Cu-Ag-Bi-I Absorber for Efficient Indoor Photovoltaics.

Lead-free perovskite-inspired materials (PIMs) are gaining attention in optoelectronics due to their low toxicity and inherent air stability. Their wide bandgaps (≈2 eV) make them ideal for indoor light harvesting. However, the investigation of PIMs for indoor photovoltaics (IPVs) is still in its infancy. Herein, the IPV potential of a quaternary PIM, Cu2 AgBiI6 (CABI), is demonstrated upon controlling the film crystallization dynamics via additive engineering. The addition of 1.5 vol% hydroiodic acid (HI) leads to films with improved surface coverage and large crystalline domains. The morphologically-enhanced CABI+HI absorber leads to photovoltaic cells with a power conversion efficiency of 1.3% under 1 sun illumination-the highest efficiency ever reported for CABI cells and of 4.7% under indoor white light-emitting diode lighting-that is, within the same range of commercial IPVs. This work highlights the great potential of CABI for IPVs and paves the way for future performance improvements through effective passivation strategies.

Dissecting the Role of the Hole-Transport Layer in Cu2 AgBiI6 Solar Cells: An Integrated Experimental and Theoretical Study.

Perovskite-inspired materials (PIMs) provide low-toxicity and air-stable photo-absorbers for several possible optoelectronic devices. In this context, the pnictogen-based halides Cu2AgBiI6 (CABI) are receiving increasing attention in photovoltaics. Despite extensive studies on power conversion efficiency and shelf-life stability, nearly no attention has been given to the physicochemical properties of the interface between CABI and the hole transport layer (HTL), which can strongly impact overall cell operations. Here, we address this specific interface with three polymeric HTLs: poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (poly-TPD), thiophene-(poly(3-hexylthiophene)) (P3HT), and poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine) (PTAA). Our findings reveal that devices fabricated with poly-TPD and P3HT outperform the commonly used Spiro-OMeTAD in terms of device operational stability, while PTAA exhibits worse performances. Density functional theory calculations unveil the electronic and chemical interactions at the CABI-HTL interfaces, providing new insights into observed experimental behaviors. Our study highlights the importance of addressing the buried interfaces in PIM-based devices to enhance their overall performance and stability.

Improving the Efficiency and Stability of Perovskite Solar Cells by Refining the Perovskite-Electron Transport Layer Interface and Shielding the Absorber from UV Effects.

This study aims to enhance the performance of perovskite solar cells (PSCs) by optimizing the interface between the perovskite and electron transport layers (ETLs). Additionally, we plan to protect the absorber layer from ultraviolet (UV) degradation using a ternary oxide system comprising SnO2, strontium stannate (SrSnO3), and strontium oxide (SrO). In this structure, the SnO2 layer functions as an electron transport layer, SrSnO3 acts as a layer for UV filtration, and SrO is employed to passivate the interface. SrSnO3 is characterized by its chemical stability, electrical conductivity, extensive wide band gap energy, and efficient absorption of UV radiation, all of which significantly enhance the photostability of PSCs against UV radiation. Furthermore, incorporating SrSnO3 into the ETL improves its electronic properties, potentially raising the energy level and improving alignment, thereby enhancing the electron transfer from the perovskite layer to the external circuit. Integrating SrO at the interface between the ETL and perovskite layer reduces interface defects, thereby reducing charge recombination and improving electron transfer. This improvement results in higher solar cell efficiency, reduced hysteresis, and extended device longevity. The benefits of this method are evident in the observed improvements: a noticeable increase in open-circuit voltage (Voc) from 1.12 to 1.16 V, an enhancement in the fill factor from 79.4 to 82.66%, a rise in the short-circuit current density (Jsc) from 24.5 to 24.9 mA/cm2 and notably, a marked improvement in the power conversion efficiency (PCE) of PSCs, from 21.79 to 24.06%. Notably, the treated PSCs showed only a slight decline in PCE, reducing from 24.15 to 22.50% over nearly 2000 h. In contrast, untreated SnO2 perovskite devices experienced a greater decline, with efficiency decreasing from 21.79 to 17.83% in just 580 h.

Halide Perovskites for Photoelectrochemical Water Splitting and CO2 Reduction: Challenges and Opportunities.

Photoelectrochemical water splitting and CO2 reduction provide an attractive route to produce solar fuels while reducing the level of CO2 emissions. Metal halide perovskites (MHPs) have been extensively studied for this purpose in recent years due to their suitable optoelectronic properties. In this review, we survey the recent achievements in the field. After a brief introduction to photoelectrochemical (PEC) processes, we discussed the properties, synthesis, and application of MHPs in this context. We also survey the state-of-the-art findings regarding significant achievements in performance, and developments in addressing the major challenges of toxicity and instability toward water. Efforts have been made to replace the toxic Pb with less toxic materials like Sn, Ge, Sb, and Bi. The stability toward water has been also improved by using various methods such as compositional engineering, 2D/3D perovskite structures, surface passivation, the use of protective layers, and encapsulation. In the last part, considering the experience gained in photovoltaic applications, we provided our perspective for the future challenges and opportunities. We place special emphasis on the improvement of stability as the major challenge and the potential contribution of machine learning to identify the most suitable formulation for halide perovskites with desired properties.

Lead-free perovskite-inspired semiconductors for indoor light-harvesting - the present and the future.

Are lead-free perovskite-inspired materials (PIMs) the wise choice for efficient yet sustainable indoor light harvesting? This feature article outlines how wide-bandgap PIMs can provide a positive answer to this compelling question. The wide band gaps can hinder sunlight absorption, in turn limiting the solar cell performance. However, PIMs based on group VA of the periodic table can theoretically lead to an outstanding indoor power conversion efficiency up to 60% when their band gap is ∼2 eV. Yet, the research on PIM-based indoor photovoltaics (IPVs) is still in an early stage with highest indoor device efficiencies up to 10%. This article reviews the recent advancements on PIMs for IPVs and identifies the main limiting factors of device performance, thus suggesting effective strategies to address them. We emphasize the poor operational stability of the IPV devices of PIMs being the key bottleneck for the vast adoption of this technology. We believe that this report can provide a solid scaffolding for further researching this fascinating class of materials, ultimately supporting our vision that, upon extensive advancement of the stability and efficiency, PIMs with wide bandgap will become a contender for the next-generation absorbers for sustainable indoor light harvesting.

Role of Self-Trapped Excitons in the Broadband Emission of Lead-Free Perovskite-Inspired Cu2AgBiI6.

The perovskite-inspired Cu2AgBiI6 (CABI) absorber shows promise for low-toxicity indoor photovoltaics. However, the carrier self-trapping in this material limits its photovoltaic performance. Herein, we examine the self-trapping mechanism in CABI by analyzing the excited-state dynamics of its absorption band at 425 nm, which is responsible for the self-trapped exciton emission, using a combination of photoluminescence and ultrafast transient absorption spectroscopies. Photoexcitation in CABI rapidly generates charge carriers in the silver iodide lattice sites, which localize into the self-trapped states and luminesce. Furthermore, a Cu-Ag-I-rich phase that exhibits similar spectral responses as CABI is synthesized, and a comprehensive structural and photophysical study of this phase provides insights into the nature of the excited states of CABI. Overall, this work explains the origin of self-trapping in CABI. This understanding will play a crucial role in optimizing its optoelectronic properties. It also encourages compositional engineering as the key to suppressing self-trapping in CABI.