1.
J Nanosci Nanotechnol
; 13(6): 4325-9, 2013 Jun.
Artigo
em Inglês
| MEDLINE
| ID: mdl-23862495
RESUMO
The periodic beveled micro-rods (BMRs) were constructed on the emission surface of GaN-based vertical light-emitting diodes (VLEDs) in order to improve the light-extraction efficiency. It was experimentally demonstrated that the light output power of the VLEDs with a periodic BMR (BMR-VLED) were enhanced about 15.6%, compared with that of the VLEDs with randomly textured surface (RT-VLED) at an injection current of 350 mA. This finding indicates that the photons emitted from the active layer were well out-coupled at an n-GaN surface having a periodic BMR structure, resulting in an increase in the probability of escaping from the VLED structure.