Robust Mutual Synchronization in Long Spin Hall Nano-oscillator Chains.

Mutual synchronization of N serially connected spintronic nano-oscillators boosts their coherence by N and peak power by N2. Increasing the number of synchronized nano-oscillators in chains holds significance for improved signal quality and emerging applications such as oscillator based unconventional computing. We successfully fabricate spin Hall nano-oscillator chains with up to 50 serially connected nanoconstrictions using W/NiFe, W/CoFeB/MgO, and NiFe/Pt stacks. Our experiments demonstrate robust and complete mutual synchronization of 21 nanoconstrictions at an operating frequency of 10 GHz, achieving line widths <134 kHz and quality factors >79,000. As the number of mutually synchronized oscillators increases, we observe a quadratic increase in peak power, resulting in 400-fold higher peak power in long chains compared to individual nanoconstrictions. While chains longer than 21 nanoconstrictions also achieve complete mutual synchronization, it is less robust, and their signal quality does not improve significantly, as they tend to break into partially synchronized states.

Large Damping-Like Spin-Orbit Torque in a 2D Conductive 1T-TaS2 Monolayer.

A damping-like spin-orbit torque (SOT) is a prerequisite for ultralow-power spin logic devices. Here, we report on the damping-like SOT in just one monolayer of the conducting transition-metal dichalcogenide (TMD) TaS2 interfaced with a NiFe (Py) ferromagnetic layer. The charge-spin conversion efficiency is found to be 0.25 ± 0.03 in TaS2(0.88)/Py(7), and the spin Hall conductivity (14.9×105ℏ2eΩ-1m-1) is found to be superior to values reported for other TMDs. We also observed sizable field-like torque in this heterostructure. The origin of this large damping-like SOT can be found in the interfacial properties of the TaS2/Py heterostructure, and the experimental findings are complemented by the results from density functional theory calculations. It is envisioned that the interplay between interfacial spin-orbit coupling and crystal symmetry yielding large damping-like SOT. The dominance of damping-like torque demonstrated in our study provides a promising path for designing the next-generation conducting TMD-based low-powered quantum memory devices.

Ultra-Low Current 10 nm Spin Hall Nano-Oscillators.

Nano-constriction based spin Hall nano-oscillators (SHNOs) are at the forefront of spintronics research for emerging technological applications, such as oscillator-based neuromorphic computing and Ising Machines. However, their miniaturization to the sub-50 nm width regime results in poor scaling of the threshold current. Here, it shows that current shunting through the Si substrate is the origin of this problem and studies how different seed layers can mitigate it. It finds that an ultra-thin Al2 O3 seed layer and SiN (200 nm) coated p-Si substrates provide the best improvement, enabling us to scale down the SHNO width to a truly nanoscopic dimension of 10 nm, operating at threshold currents below 30 µ $\umu$ A. In addition, the combination of electrical insulation and high thermal conductivity of the Al2 O3 seed will offer the best conditions for large SHNO arrays, avoiding any significant temperature gradients within the array. The state-of-the-art ultra-low operational current SHNOs hence pave an energy-efficient route to scale oscillator-based computing to large dynamical neural networks of linear chains or 2D arrays.

Large out-of-plane spin-orbit torque in topological Weyl semimetal TaIrTe4.

The unique electronic properties of topological quantum materials, such as protected surface states and exotic quasiparticles, can provide an out-of-plane spin-polarized current needed for external field-free magnetization switching of magnets with perpendicular magnetic anisotropy. Conventional spin-orbit torque (SOT) materials provide only an in-plane spin-polarized current, and recently explored materials with lower crystal symmetries provide very low out-of-plane spin-polarized current components, which are not suitable for energy-efficient SOT applications. Here, we demonstrate a large out-of-plane damping-like SOT at room temperature using the topological Weyl semimetal candidate TaIrTe4 with a lower crystal symmetry. We performed spin-torque ferromagnetic resonance (STFMR) and second harmonic Hall measurements on devices based on TaIrTe4/Ni80Fe20 heterostructures and observed a large out-of-plane damping-like SOT efficiency. The out-of-plane spin Hall conductivity is estimated to be (4.05 ± 0.23)×104 (ℏ / 2e) (Ωm)-1, which is an order of magnitude higher than the reported values in other materials.

Capping Layer (CL) Induced Antidamping in CL/Py/ß-W System (CL: Al, ß-Ta, Cu, ß-W).

For achieving ultrafast switching speed and minimizing dissipation losses, the spin-based data storage device requires a control on effective damping (αeff) of nanomagnetic bits. Incorporation of interfacial antidamping spin orbit torque (SOT) in spintronic devices therefore has high prospects for enhancing their performance efficiency. Clear evidence of such an interfacial antidamping is found in Al capped Py(15 nm)/ß-W(tW)/Si (Py = Ni81Fe19 and tW = thickness of ß-W), which is in contrast to the increase of αeff (i.e., damping) usually associated with spin pumping as seen in Py(15 nm)/ß-W(tW)/Si system. Because of spin pumping, the interfacial spin mixing conductance (g↑↓) at Py/ß-W interface and spin diffusion length (λSD) of ß-W are found to be 1.63(±0.02) × 1018 m-2 (1.44(±0.02) × 1018 m-2) and 1.42(±0.19) nm (1.00(±0.10) nm) for Py(15 nm)/ß-W(tW)/Si (ß-W(tW)/Py(15 nm)/Si) bilayer systems. Other different nonmagnetic capping layers (CL), namely, ß-W(2 nm), Cu(2 nm), and ß-Ta(2,3,4 nm) were also grown over the same Py(15 nm)/ß-W(tW). However, antidamping is seen only in ß-Ta(2,3 nm)/Py(15 nm)/ß-W(tW)/Si. This decrease in αeff is attributed to the interfacial Rashba like SOT generated by nonequilibrium spin accumulation subsequent to the spin pumping. Contrary to this, when interlayer positions of Py(15 nm) and ß-W(tW) is interchanged irrespective of the fixed top nonmagnetic layer, an increase of αeff is observed, which is ascribed to spin pumping from Py to ß-W layer.

Anomalous anti-damping in sputtered ß-Ta/Py bilayer system.

Anomalous decrease in effective damping parameter αeff in sputtered Ni81Fe19 (Py) thin films in contact with a very thin ß-Ta layer without necessitating the flow of DC-current is observed. This reduction in αeff, which is also referred to as anti-damping effect, is found to be critically dependent on the thickness of ß-Ta layer; αeff being highest, i.e., 0.0093 ± 0.0003 for bare Ni81Fe19(18 nm)/SiO2/Si compared to the smallest value of 0.0077 ± 0.0001 for ß-Ta(6 nm)/Py(18 nm)/SiO2/Si. This anomalous anti-damping effect is understood in terms of interfacial Rashba effect associated with the formation of a thin protective Ta2O5 barrier layer and also the spin pumping induced non-equilibrium diffusive spin-accumulation effect in ß-Ta layer near the Ta/Py interface which induces additional spin orbit torque (SOT) on the moments in Py leading to reduction in αeff. The fitting of αeff (tTa) revealed an anomalous negative interfacial spin mixing conductance, g(↑↓) = -1.13 ± .05 × 10(18) m(-2) and spin diffusion length, λSD = 2.47 ± 0.47 nm. The increase in αeff observed above tTa = 6 nm is attributed to the weakening of SOT at higher tTa. The study highlights the potential of employing ß-Ta based nanostructures in developing low power spintronic devices having tunable as well as low value of α.