Morphology of single picosecond pulse subsurface laser-induced modifications of sapphire and subsequent selective etching.

The effect of 1030nm single picosecond pulsed laser-induced modification of the bulk of crystalline sapphire using a combined process of laser amorphization and selective wet chemical etching is studied. Pulse durations of more than 1 picosecond are not commonly used for this subsurface process. We examine the effect of 7 picosecond pulses on the morphology of the unetched, as well as etched, single pulse modifications, showing the variation of shape and size when varying the pulse energy and the depth of processing. In addition, a qualitative analysis of the material transformation after irradiation is provided as well as an analysis of cracking phenomena. Finally, a calculated laser intensity profile inside sapphire, using the Point Spread Function (PSF), is compared to the shape of the modifications. This comparison is employed to calculate the intensity threshold leading to amorphization, which equals 2.5⋅1014 ± 0.4⋅1014 W/cm2.

A wafer-scale fabrication method for three-dimensional plasmonic hollow nanopillars.

Access to nanofabrication strategies for crafting three-dimensional plasmonic structures is limited. In this work, a fabrication strategy to produce 3D plasmonic hollow nanopillars (HNPs) using Talbot lithography and I-line photolithography is introduced. This method is named subtractive hybrid lithography (SHL), and permits intermixed usage of nano-and-macroscale patterns. Sputter-redeposition of gold (Au) on the SHL resist pattern yields large areas of dense periodic Au-HNPs. These Au-HNPs are arranged in a square unit cell with a 250 nm pitch. The carefully controlled fabrication process resulted in Au-HNPs with nanoscale dimensions over the Au-HNP dimensions such as an 80 ± 2 nm thick solid base with a 133 ± 4 nm diameter, and a 170 ± 10 nm high nano-rim with a 14 ± 3 nm sidewall rim-thickness. The plasmonic optical response is assessed with FDTD-modeling and reveals that the highest field enhancement is at the top of the hollow nanopillar rim. The modeled field enhancement factor (EF) is compared to the experimental analytical field enhancement factor, which shows to pair up with ca. 103 < EF < 104 and ca. 103 < EF < 105 for excitation wavelengths of 633 and 785 nm. From a broader perspective, our results can stimulate the use of Au-HNPs in the fields of plasmonic sensors and spectroscopy.

Chemically anisotropic single-crystalline silicon nanotetrahedra.

We describe a method based on silicon micromachining to machine single-crystalline silicon nanoparticles bounded by (111) faces in the form of tetrahedra. The technology allows the fabrication of tetrahedra in a size range from 20 to 1000 nm side length, and gives the possibility to chemically modify sites (faces, edges and/or tips) within certain limits. The chemical modification is anticipated to facilitate the self-assembly into new supermaterials such as photonic crystals in the diamond lattice.

Fabrication and characterization of high-temperature microreactors with thin film heater and sensor patterns in silicon nitride tubes.

In this paper the fabrication and electrical characterization of a silicon microreactor for high-temperature catalytic gas phase reactions, like Rh-catalyzed catalytic partial oxidation of methane into synthesis gas, is presented. The microreactor, realized with micromachining technologies, contains silicon nitride tubes that are suspended in a flow channel. These tubes contain metal thin films that heat the gas mixture in the channel and sense its temperature. The metal patterns are defined by using the channel geometry as a shadow mask. Furthermore, a new method to obtain Pt thin films with good adhesive properties, also at elevated temperatures, without adhesion metal is implemented in the fabrication process. Based on different experiments, it is concluded that the electrical behaviour at high temperatures of Pt thin films without adhesion layer is better than that of Pt/Ta films. Furthermore, it is found that the temperature coefficient of resistance (TCR) and the resistivity of the thin films are stable for up to tens of hours when the temperature-range during operation of the microreactor is below the so-called "burn-in" temperature. Experiments showed that the presented suspended-tube microreactors with heaters and temperature sensors of Pt thin films can be operated safely and in a stable way at temperatures up to 700 degrees C for over 20 h. This type of microreactor solves the electrical breakdown problem that was previously reported by us in flat-membrane microreactors that were operated at temperatures above 600 degrees C.

Nanofluidic bubble pump using surface tension directed gas injection.

A new concept for liquid manipulation has been developed and implemented in surface-micromachined fluid channels. It is based on the surface tension directed injection of a gas into the liquid flow through micrometer-sized holes in the microchannel wall. The injected gas is directed to an exhaust by a cross-sectional asymmetry of the microchannel and thereby moves minute liquid volumes. Successful pumping experiments were performed with single stroke volumes of tens of picoliters at frequencies around 1 Hz. The minimum actuation pressure is 0.6 bar for a 2-microm channel height, in accordance with theoretical predictions.

Mechano-optical waveguide on-off intensity modulator.

High-extinction on-off modulators are essential for channel selection in integrated-optical sensor arrays. We report a standard SiON-technology-based electrostatically driven integrated mechano-optical waveguide on-off intensity modulator. On-off modulation is achieved by movement of an absorbing element into and out of the evanescent field of the guided mode. An extinction ratio of >37 dB at an actuation voltage of <30 V was achieved in a 6 mm x 4 mm device for a wavelength of 632.8 nm. Full wafer-scale fabrication is made possible by use of chemical mechanical polishing and aligned wafer bonding.