Evaluation of a textile-based near infrared spectroscopy system in calf muscle oxygenation measurements.

We recently introduced a novel textile-based NIRS sensor (TexNIRS). Here, we evaluate TexNIRS in ten subjects (16 legs, age 28.5 ± 2.32 years, adipose tissue thickness (ATT) 4.17 ± 1.71 mm). Three venous occlusions at 50 mmHg were performed on their calf muscle. After 3 min of occlusion, oxy/deoxy hemoglobin concentration ([O2Hb], [HHb]) changes were 3.71 ± 1.89/1.79 ± 1.08 µM; venous oxygen saturation (SvO2) was 75 ± 9.7 %, oxygen consumption (VO2) was 0.02 ± 0.01 mL/100 g/min, hemoglobin flow (HF) was 0.93 ± 0.48 µmol/100 mL/min, and blood flow (BF) was 2.01 ± 1.04 mL/100 mL/min. Our results are in good agreement with the literature, but the TexNIRS enables a much higher level of comfort.

Textile integrated sensors and actuators for near-infrared spectroscopy.

Being the closest layer to our body, textiles provide an ideal platform for integrating sensors and actuators to monitor physiological signals. We used a woven textile to integrate photodiodes and light emitting diodes. LEDs and photodiodes enable near-infrared spectroscopy (NIRS) systems to monitor arterial oxygen saturation and oxygenated and deoxygenated hemoglobin in human tissue. Photodiodes and LEDs are mounted on flexible plastic strips with widths of 4 mm and 2 mm, respectively. The strips are woven during the textile fabrication process in weft direction and interconnected with copper wires with a diameter of 71 µm in warp direction. The sensor textile is applied to measure the pulse waves in the fingertip and the changes in oxygenated and deoxygenated hemoglobin during a venous occlusion at the calf. The system has a signal-to-noise ratio of more than 70 dB and a system drift of 0.37% ± 0.48%. The presented work demonstrates the feasibility of integrating photodiodes and LEDs into woven textiles, a step towards wearable health monitoring devices.

Buckled Thin-Film Transistors and Circuits on Soft Elastomers for Stretchable Electronics.

Although recent progress in the field of flexible electronics has allowed the realization of biocompatible and conformable electronics, systematic approaches which combine high bendability (<3 mm bending radius), high stretchability (>3-4%), and low complexity in the fabrication process are still missing. Here, we show a technique to induce randomly oriented and customized wrinkles on the surface of a biocompatible elastomeric substrate, where Thin-Film Transistors (TFTs) and circuits (inverter and logic NAND gates) based on amorphous-IGZO are fabricated. By tuning the wavelength and the amplitude of the wrinkles, the devices are fully operational while bent to 13 µm bending radii as well as while stretched up to 5%, keeping unchanged electrical properties. Moreover, a flexible rectifier is also realized, showing no degradation in the performances while flat or wrapped on an artificial human wrist. As proof of concept, transparent TFTs are also fabricated, presenting comparable electrical performances to the nontransparent ones. The extension of the buckling approach from our TFTs to circuits demonstrates the scalability of the process, prospecting applications in wireless stretchable electronics to be worn or implanted.

A wearable bluetooth LE sensor for patient monitoring during MRI scans.

This paper presents a working prototype of a wearable patient monitoring device capable of recording the heart rate, blood oxygen saturation, surface temperature and humidity during an magnetic resonance imaging (MRI) experiment. The measured values are transmitted via Bluetooth low energy (LE) and displayed in real time on a smartphone on the outside of the MRI room. During 7 MRI image acquisitions of at least 1 min and a total duration of 25 min no Bluetooth data packets were lost. The raw measurements of the light intensity for the photoplethysmogram based heart rate measurement shows an increased noise floor by 50LSB (least significant bit) during the MRI operation, whereas the temperature and humidity readings are unaffected. The device itself creates a magnetic resonance (MR) signal loss with a radius of 14 mm around the device surface and shows no significant increase in image noise of an acquired MRI image due to its radio frequency activity. This enables continuous and unobtrusive patient monitoring during MRI scans.

Design and simulation of a 800 Mbit/s data link for magnetic resonance imaging wearables.

This paper presents the optimization of electronic circuitry for operation in the harsh electro magnetic (EM) environment during a magnetic resonance imaging (MRI) scan. As demonstrator, a device small enough to be worn during the scan is optimized. Based on finite element method (FEM) simulations, the induced current densities due to magnetic field changes of 200 T s(-1) were reduced from 1 × 10(10) A m(-2) by one order of magnitude, predicting error-free operation of the 1.8V logic employed. The simulations were validated using a bit error rate test, which showed no bit errors during a MRI scan sequence. Therefore, neither the logic, nor the utilized 800 Mbit s(-1) low voltage differential swing (LVDS) data link of the optimized wearable device were significantly influenced by the EM interference. Next, the influence of ferro-magnetic components on the static magnetic field and consequently the image quality was simulated showing a MRI image loss with approximately 2 cm radius around a commercial integrated circuit of 1×1 cm(2). This was successively validated by a conventional MRI scan.

Wafer-scale design of lightweight and transparent electronics that wraps around hairs.

Electronics on very thin substrates have shown remarkable bendability, conformability and lightness, which are important attributes for biological tissues sensing, wearable or implantable devices. Here we propose a wafer-scale process scheme to realize ultra flexible, lightweight and transparent electronics on top of a 1-µm thick parylene film that is released from the carrier substrate after the dissolution in water of a polyvinyl- alcohol layer. The thin substrate ensures extreme flexibility, which is demonstrated by transistors that continue to work when wrapped around human hairs. In parallel, the use of amorphous oxide semiconductor and high-K dielectric enables the realization of analogue amplifiers operating at 12 V and above 1 MHz. Electronics can be transferred on any object, surface and on biological tissues like human skin and plant leaves. We foresee a potential application as smart contact lenses, covered with light, transparent and flexible devices, which could serve to monitor intraocular pressure for glaucoma disease.

Fabrication and transfer of flexible few-layers MoS2 thin film transistors to any arbitrary substrate.

Recently, transition metal dichalcogenides (TMDCs) have attracted interest thanks to their large field effective mobility (>100 cm(2)/V · s), sizable band gap (around 1-2 eV), and mechanical properties, which make them suitable for high performance and flexible electronics. In this paper, we present a process scheme enabling the fabrication and transfer of few-layers MoS2 thin film transistors from a silicon template to any arbitrary organic or inorganic and flexible or rigid substrate or support. The two-dimensional semiconductor is mechanically exfoliated from a bulk crystal on a silicon/polyvinyl alcohol (PVA)/polymethyl methacrylane (PMMA) stack optimized to ensure high contrast for the identification of subnanometer thick flakes. Thin film transistors (TFTs) with structured source/drain and gate electrodes are fabricated following a designed procedure including steps of UV lithography, wet etching, and atomic layer deposited (ALD) dielectric. Successively, after the dissolution of the PVA sacrificial layer in water, the PMMA film, with the devices on top, can be transferred to another substrate of choice. Here, we transferred the devices on a polyimide plastic foil and studied the performance when tensile strain is applied parallel to the TFT channel. We measured an electron field effective mobility of 19 cm(2)/(V s), an I(on)/I(off)ratio greater than 10(6), a gate leakage current as low as 0.3 pA/µm, and a subthreshold swing of about 250 mV/dec. The devices continue to work when bent to a radius of 5 mm and after 10 consecutive bending cycles. The proposed fabrication strategy can be extended to any kind of 2D materials and enable the realization of electronic circuits and optical devices easily transferrable to any other support.