High-Performance Hard X-Ray Imaging Detector Using Facet-Dependent Bismuth Vanadate.

Bismuth vanadate (BiVO4) exhibits large absorption efficiency for hard X-rays, which endows it with a robust capacity to attenuate X-ray radiation across a broad energy range. The anisotropic properties of BiVO4 allow for the manipulation of their physical and chemical characteristics through crystallographic orientation and exposed facets. In this study, the issue of heavy recombination caused by sluggish electron transport in BiVO4 is successfully addressed by enhancing the abundance of the (040) crystal face ratio using a Co2+ crystal face exposure agent. The facet-dependent modifications exhibit excellent and balanced intrinsic charge transport properties, and finely optimize both the sensitivity and detection limit of BiVO4 X-ray detectors. As a result, ultra-stable BiVO4 metal oxide X-ray detectors demonstrate a high sensitivity of 3164 µC Gyair -1 cm-2 and a low detection limit of 20.76 nGyair s-1 under 110 kVp hard X-rays, establishing a new benchmark for X-ray detectors based on polycrystalline Bi-halides and metal oxides. These findings highlight the significance of crystal orientation in optimizing materials for X-ray detection, setting a new sensitivity record for X-ray detectors based on polycrystalline Bi-halides and metal oxides, which paves the way for the development of advanced, low-dose, and highly stable imaging systems specifically for hard X-rays.

High-Performance Flat-Panel Perovskite X-ray Detectors Enabled by Defect Passivation in Ruddlesden-Popper Perovskites.

Halide perovskites have emerged as promising candidates in X-ray detection due to their strong X-ray absorption and excellent optoelectronic properties. The development of sensitive and stable flat-panel X-ray detectors with high resolution is crucial for practical applications. In this paper, we introduce a novel flat-panel X-ray detector that integrates quasi-two-dimensional (2D) Ruddlesden-Popper (RP) perovskite with a pixeled thin film transistor (TFT) backplane. We incorporate 2,5-dibromopyrimidine (DBPM) as an additive to passivate the Lewis acid defects in the quasi-2D RP perovskite. This modification results in suppressed ion migration, improved optoelectronic performance, and enhanced operational stability of the device. Impressively, the activation energy of the RP perovskite increases from 0.96 to 1.35 eV with the DBPM additive. As a result, X-ray detectors exhibit a high sensitivity of ∼13,600 µC Gyair-1 cm-2, a low detection limit of 6.56 nGyair s-1, and excellent operational stability. Moreover, the flat-panel detectors demonstrate a high spatial resolution of 3.7 line pairs per millimeter and excellent X-ray imaging properties under a remarkably low X-ray dose of ∼50 µGyair, which is just half of the X-ray dose typically used in commercial equipment. This study opens new avenues for the development of flat-panel perovskite X-ray detectors with significant potential for various applications.

Halide perovskites for sensitive, stable and scalable X-ray detection and imaging.

Halide perovskites have attracted significant research interests in the X-ray detection and imaging field. Their strong X-ray attenuating ability and good carrier transportation endow them with high sensitivity, which is better than those of commercialized amorphous selenium (a-Se) and CdZnTe (CZT). However, ion migration has been identified as a critical factor that deteriorates the performance of three-dimensional (3D) lead-based halide perovskite detectors. Moreover, large dark current has hindered their application in low-dose X-ray detection. Another major challenge is to fabricate large area, high-quality thick perovskites that can be integrated with commercial electronic readout backplanes, such as thin-film transistors (TFTs) and complementary metal-oxide-semiconductor (CMOS) transistors, to produce multipixel flat-panel detectors for X-ray imaging. Bismuth-based halide perovskites have been demonstrated to be competitive candidates due to their low ionic migration and small dark current. Fabrication methods, including pressing, membrane filling, blade coating, spray coating etc., will be summarized and discussed in detail. This feature article discusses the potential and challenges in perovskite X-ray detection and imaging, providing new research directions for future development.

Nucleation Engineering in Sprayed MA3Bi2I9 Films for Direct-Conversion X-ray Detectors.

Metal halide perovskite and its derivatives show great promise in X-ray detection. However, large-scale fabrication of high-quality thick perovskite films is still full of challenges due to the complicated crystal nucleation process that always introduces lots of cracks or pinholes in the final perovskite film. Here, a MA3Bi2I9 film was fabricated by the cost-effective, scalable spraying process, and MACl was used as an additive to effectively tune the crystallization process. As a result, a dense MA3Bi2I9 film constituted by large grains was obtained, which has a high carrier mobility of ∼1 cm2 V-1 s-1 and a large activation energy (Ea) for ion migration of 0.91 eV. Thanks to the outstanding optoelectronic characteristics, X-ray detectors with a configuration of ITO/MA3Bi2I9/Au show a sensitivity of 35 µC Gyair-1 cm-2 and a limit of detection (LoD) of 0.14 µGyairs-1, which is outstanding compared with commercial α-Se detectors.

Zero-Dimensional Lead-Free FA3Bi2I9 Single Crystals for High-Performance X-ray Detection.

Direct X-ray detectors based on metal halide perovskites and their derivatives exhibit high sensitivity and low limit of detection (LoD). Compared with three-dimensional (3D) hybrid lead halide perovskites, low-dimensional A3Bi2I9 perovskite derivatives (A = Cs, Rb, NH4, CH3NH3(MA)) present better stability, greater environmental friendliness, and comparable X-ray detection performance. Here, we report FA3Bi2I9 (FA= CH(NH2)2) single crystals (SCs) as a new member of the A3Bi2I9 series for X-ray detection, which were prepared by the nucleation-controlled secondary solution constant temperature evaporation (SSCE) method. Centimeter-sized FA3Bi2I9 SCs show a full width at half-maximum (fwhm) of 0.0096°, which is superior to that of recently reported Cs3Bi2I9 (0.058°) and MA3Bi2I9 SCs (0.024°) obtained by inverse temperature crystallization (ITC). The as-grown FA3Bi2I9 SC shows a large resistivity of 7.8 × 1010 Ω cm and a high ion migration activation energy (Ea) of 0.56 eV, which can guarantee a low noise level and good operational stability under a large external bias. The FA3Bi2I9 SC detector exhibits a LoD of 0.2 µGyair s-1, a sensitivity of 598.1 µC Gyair -1 cm -2, and an X-ray detection efficiency of 33.5%, which are much better than those of the commercialized amorphous selenium detector. Results presented here will provide a new lead-free perovskite-type material to achieve green, sensitive, and stable X-ray detectors.