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1.
Nature ; 617(7959): 67-72, 2023 05.
Artigo em Inglês | MEDLINE | ID: mdl-37020017

RESUMO

Ferroelectric materials are fascinating for their non-volatile switchable electric polarizations induced by the spontaneous inversion-symmetry breaking. However, in all of the conventional ferroelectric compounds, at least two constituent ions are required to support the polarization switching1,2. Here, we report the observation of a single-element ferroelectric state in a black phosphorus-like bismuth layer3, in which the ordered charge transfer and the regular atom distortion between sublattices happen simultaneously. Instead of a homogenous orbital configuration that ordinarily occurs in elementary substances, we found the Bi atoms in a black phosphorous-like Bi monolayer maintain a weak and anisotropic sp orbital hybridization, giving rise to the inversion-symmetry-broken buckled structure accompanied with charge redistribution in the unit cell. As a result, the in-plane electric polarization emerges in the Bi monolayer. Using the in-plane electric field produced by scanning probe microscopy, ferroelectric switching is further visualized experimentally. Owing to the conjugative locking between the charge transfer and atom displacement, we also observe the anomalous electric potential profile at the 180° tail-to-tail domain wall induced by competition between the electronic structure and electric polarization. This emergent single-element ferroelectricity broadens the mechanism of ferroelectrics and may enrich the applications of ferroelectronics in the future.

2.
ACS Nano ; 16(12): 21079-21086, 2022 Dec 27.
Artigo em Inglês | MEDLINE | ID: mdl-36383161

RESUMO

The kagome lattice has attracted intense interest with the promise of realizing topological phases built from strongly interacting electrons. However, fabricating two-dimensional (2D) kagome materials with nontrivial topology is still a key challenge. Here, we report the growth of single-layer iron germanide kagome nanoflakes by molecular beam epitaxy. Using scanning tunneling microscopy/spectroscopy, we unravel the real-space electronic localization of the kagome flat bands. First-principles calculations demonstrate the topological band inversion, suggesting the topological nature of the experimentally observed edge mode. Apart from the intrinsic topological states that potentially host chiral edge modes, the realization of kagome materials in the 2D limit also holds promise for future studies of geometric frustration.

3.
ACS Nano ; 16(1): 1436-1443, 2022 Jan 25.
Artigo em Inglês | MEDLINE | ID: mdl-34918901

RESUMO

Quantum spin Hall (QSH) systems hold promises of low-power-consuming spintronic devices, yet their practical applications are extremely impeded by the small energy gaps. Fabricating QSH materials with large gaps, especially under the guidance of design principles, is essential for both scientific research and practical applications. Here, we demonstrate that large on-site atomic spin-orbit coupling can be directly exploited via the intriguing substrate-orbital-filtering effect to generate large-gap QSH systems and experimentally realized on the epitaxially synthesized ultraflat bismuthene on Ag(111). Theoretical calculations reveal that the underlying substrate selectively filters Bi pz orbitals away from the Fermi level, leading pxy orbitals with nonzero magnetic quantum numbers, resulting in large topological gap of ∼1 eV at the K point. The corresponding topological edge states are identified through scanning tunneling spectroscopy combined with density functional theory calculations. Our findings provide general strategies to design large-gap QSH systems and further explore their topology-related physics.

4.
J Phys Chem Lett ; 12(32): 7752-7760, 2021 Aug 19.
Artigo em Inglês | MEDLINE | ID: mdl-34369783

RESUMO

Thickness-dependent magnetic behavior has previously been observed in chemical vapor deposition-grown chromium selenide. However, the low-dimensional structure in nonlayered chromium selenide, which plays a crucial role in determining the low-dimensional magnetic order, needs further study. Here, we report the structure-dependent magnetic properties in monolayer CrSe2 and Cr2Se3 grown by molecular beam epitaxy. In the monolayer CrSe2, 1T-CrSe2 with a lattice constant of 3.3 Å has a metallic character, coexisting with the 1T″ phase with 2 × 2 surface periodicity. Monolayer CrSe2 can be transformed into Cr2Se3 with a lattice constant of 3.6 Å by annealing at 300 °C. X-ray magnetic circular dichroism (XMCD) measurements combined with DFT calculations reveal that while the MBE-grown monolayer CrSe2 is antiferromagnetic, monolayer Cr2Se3 is ferromagnetic with a Curie temperature of ∼200 K. This work demonstrates the structural diversity in nonlayered chromium selenide and the critical effect of different structures on its electronic and magnetic properties.

5.
J Phys Chem Lett ; 11(21): 8976-8982, 2020 Nov 05.
Artigo em Inglês | MEDLINE | ID: mdl-33035053

RESUMO

The degree of buckling of two-dimensional (2D) materials can have a dramatic impact on their corresponding electronic structures. Antimonene (ß-phase), a new 2D material with air stability and promising electronic properties, has been engineered to adopt flat or two-heights-buckling geometries by employing different supporting substrates for epitaxial growth. However, studies of the antimonene monolayer with a more buckled configuration are still lacking. Here, we report the synthesis of an antimonene monolayer with a three-heights-buckling configuration overlaid on SbAg2 surface alloy-covered Ag(111) by molecular beam epitaxy, in which the underlying surface alloy provides interfacial interactions to modulate the structure of the antimonene monolayer. The atomic structure of the synthesized antimonene has been precisely identified through a combination of low-temperature scanning tunneling microscopy and density functional theory calculations. The successful fabrication of a buckled antimonene monolayer could provide a promising way to modulate the structures of 2D materials for future electronic and optoelectronic applications.

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