RESUMO
Among a broad diversity of color centers hosted in layered van der Waals materials, the negatively charged boron vacancy (VB-) center in hexagonal boron nitride (hBN) is garnering considerable attention for the development of quantum sensing units on a two-dimensional platform. In this work, we investigate how the optical response of an ensemble of VB- centers evolves with the hBN thickness in a range of a few to hundreds of nanometers. We show that the photoluminescence intensity features a nontrivial evolution with thickness, which is quantitatively reproduced by numerical calculations taking into account thickness-dependent variations of the absorption, radiative lifetime, and radiation pattern of VB- centers. Besides providing an important resource to optimize the performances of quantum sensing units based on VB- centers in hBN, the thickness-dependent nanophotonic effects discussed in this work generally apply to any type of color center embedded in a van der Waals material.
RESUMO
The optical response of 2D materials and their heterostructures is the subject of intense research with advanced investigation of the luminescence properties in devices made of exfoliated flakes of few- down to one-monolayer thickness. Despite its prevalence in 2D materials research, hexagonal boron nitride (hBN) remains unexplored in this ultimate regime because of its ultrawide bandgap of about 6 eV and the technical difficulties related to performing microscopy in the deep-ultraviolet domain. Here, we report hyperspectral imaging at wavelengths around 200 nm in exfoliated hBN at low temperature. In monolayer boron nitride, we observe direct-gap emission around 6.1 eV. In marked contrast to transition metal dichalcogenides, the photoluminescence signal is intense in few-layer hBN, a result of the near unity radiative efficiency in indirect-gap multilayer hBN.