RESUMO
Vertically oriented and ordered GaAs nanowire arrays have been grown by the self-assisted mechanism using substrates prepared with nano-patterned oxide templates. Patterned Ga-assisted GaAs nanowire growth on (111) silicon by molecular beam epitaxy showed that the axial and radial growth rates increased with increasing interhole spacing. A model is described which accounts for the correlation of the final length and diameter with pattern pitch. The model considers that growth material is supplied by a secondary flux of both gallium and arsenic adatoms desorbing from the oxide surface between the nanowires which subsequently impinge on the liquid droplet and nanowire sidewalls. We show that shading of the incident and scattered flux by neighboring nanowires in the array can strongly affect the axial and radial growth rates, leading to significant differences in final nanowire morphologies.
RESUMO
Superconducting nanowire single-photon detectors with peak efficiencies above 90% and unrivalled timing jitter (<30 ps) have emerged as a potent technology for quantum information and sensing applications. However, their high cost and cryogenic operation limit their widespread applicability. Here, we present an approach using tapered InP nanowire p-n junction arrays for high-efficiency, broadband and high-speed photodetection without the need for cryogenic cooling. The truncated conical nanowire shape enables a broadband, linear photoresponse in the ultraviolet to near-infrared range (~500 nm bandwidth) with external quantum efficiencies exceeding 85%. The devices exhibit a high gain beyond 105, such that a single photon per pulse can be distinguished from the dark noise, while simultaneously showing a fast pulse rise time (<1 ns) and excellent timing jitter (<20 ps). Such detectors open up new possibilities for applications in remote sensing, dose monitoring for cancer treatment, three-dimensional imaging and quantum communication.