Cavity-enhanced stimulated raman scattering from short GaP nanowires.

We report the first observation of stimulated Raman scattering (SRS) from semiconductor nanowires (SNWs). Using continuous wave (CW) excitation (514.5 nm), very strong nonlinear SRS was observed in backscattering from short segments of crystalline GaP NWs with diameter d = 210 nm when the wire length L < 1.1 microm. The SRS intensity was found to increase dramatically with decreasing L down to 270 nm. The effective threshold pump power P(T) needed to observe the SRS is quite small. Indeed, we observe values of P(T) 3 orders of magnitude smaller than reported for bulk crystals of strongly nonlinear LiIO(3) and Ba(NO(3))(2) and 2 orders of magnitude smaller than that reported recently for SRS from "top-down" fabricated silicon microwaveguides. P(T) was observed to decrease linearly with decreasing L. Our data are discussed in terms of theoretical results developed for dielectric cavities. The quality factors Q for the short GaP cylindrical cavities studied here are estimated to be approximately 15,000. Our results suggest that SNWs may find applications as Raman lasers.

Adsorption of ammonia on graphene.

We report on experimental studies of NH3 adsorption/desorption on graphene surfaces. The study employs bottom-gated graphene field effect transistors supported on Si/SiO2 substrates. Detection of NH3 occurs through the shift of the source-drain resistance maximum ('Dirac peak') with the gate voltage. The observed shift of the Dirac peak toward negative gate voltages in response to NH3 exposure is consistent with a small charge transfer (f approximately 0.068 +/- 0.004 electrons per molecule at pristine sites) from NH3 to graphene. The desorption kinetics involves a very rapid loss of NH3 from the top surface and a much slower removal from the bottom surface at the interface with the SiO2 that we identify with a Fickian diffusion process.

Curvature-induced D-band Raman scattering in folded graphene.

Micro-Raman scattering from folds in single-layer graphene sheets finds a D-band at the fold for both incommensurate and commensurate folding, while the parent single-layer graphene lacks a D-band. A coupled elastic-continuum/tight-binding calculation suggests that this D-band arises from the spatially inhomogeneous curvature around a fold in a graphene sheet. The polarization dependence of the fold-induced D-band further reveals that the inhomogeneous curvature acts as a very smooth, ideal one-dimensional defect along the folding direction.

Probing graphene edges via Raman scattering.

We present results of a Raman scattering study from the region near the edges of n-graphene layer films. We find that a Raman band (D) located near 1344 cm(-1) (514.5 nm excitation) originates from a region next to the edge with an apparent width of approximately 70 nm (upper bound). The D-band was found to exhibit five important characteristics: (1) a single Lorentzian component for n = 1, and four components for n = 2-4, (2) an intensity I(D) approximately cos(4) theta, where theta is the angle between the incident polarization and the average edge direction, (3) a local scattering efficiency (per unit area) comparable to the G-band, (4) dispersive behavior ( approximately 50 cm(-1)/eV for n = 1), consistent with the double resonance (DR) scattering mechanism, and (5) a scattering efficiency that is almost independent of the crystallographic orientation of the edge. High-resolution transmission electron microscope images reveal that our cleaved edges exhibit a sawtooth-like roughness of approximately 3 nm (i.e., approximately 20 times the C-C bond length). We propose that in the double resonance Raman scattering process the photoelectron scatters diffusely from our edges, obscuring the recently proposed strong variation in the scattering from armchair versus zigzag symmetry edges based on theoretical arguments.