Binding waste anthracite fines with Si-containing materials as an alternative fuel for foundry cupola furnaces.

An alternative fuel to replace foundry coke in cupolas was developed from waste anthracite fines. Waste anthracite fines were briquetted with Si-containing materials and treated in carbothermal (combination of heat and carbon) conditions that simulated the cupola preheat zone to form silicon carbide nanowires (SCNWs). SCNWs can provide hot crushing strengths, which are important in cupola operations. Lab-scale experiments confirmed that the redox level of the Si-source significantly affected the formation of SiC. With zerovalent silicon, SCNWs were formed within the anthracite pellets. Although amorphous Si (+4) plus anthracite formed SiC, these conditions did not transform the SiC into nanowires. Moreover, under the test conditions, SiC was not formed between crystallized Si (+4) and anthracite. In a full-scale demonstration, bricks made from anthracite fines and zerovalent silicon successfully replaced a part of the foundry coke in a full-scale cupola. In addition to saving in fuel cost, replacing coke by waste anthracite fines can reduce energy consumption and CO2 and other pollution associated with conventional coking.

Diffusion in Si(x)Ge(1-x)/Si nanowire heterostructures.

Si0.48Ge0.52/Si tip/nanowire heterostructures were grown by pulsed laser vaporization (PLV) at a growth temperature of 1100 degrees C. Ge diffusion in [111]-growth Si nanowires was studied for different post-synthesis annealing temperatures from 200 degrees C to 800 degrees C. Ge composition profiles were quantified by energy-dispersive X-ray spectroscopy in a transmission electron microscope. The compositional profiles were modeled by a limited-source diffusion model to extract temperature-dependent diffusion coefficients. The Ge diffusion coefficients followed an Arrhenius relationship with an activation energy of 0.622 +/- 0.050 eV. This rather low activation energy barrier is similar to the previously reported activation energy barrier of 0.67 eV for Ge surface diffusion on Si, suggesting that surface diffusion may dominate in nanowires at this length scale.

Ultrafast crystallization kinetics in (Pb,La)Zr0.30Ti0.70O3 thin films by pulsed excimer laser annealing.

The crystallization kinetics of laser-annealed Lamodified Pb(Zr,Ti)O3 (PLZT) thin films on LaNiO3-coated silicon substrates were investigated for substrate temperatures below 400 °C. A KrF excimer laser having a ~20 ns pulse width and an energy density ~40 mJ/cm² was used to crystallize the films. The perovskite phase developed with cumulative laser pulse exposures; it was found that ~380 to 400 nm thick films could be fully crystallized for a total exposure time of 0.1 to 1 ms. Laser-crystallized films exhibited comparable dielectric and ferroelectric properties to those prepared by rapid thermal annealing at 650 °C for 1 min. The evolution of the dielectric properties as a function of the number of laser strikes suggests that once nuclei are present, they rapidly grow through the depth of the film. This is consistent with the electron microscopy results, which did not show a well-defined planar growth front that proceeds from the top to the bottom of the film. The resulting films showed comparatively large lateral grain sizes (on the order of 250 to 300 nm), with high defect concentrations. The nucleation and growth mechanisms were modeled using Avrami kinetics under rate-dependent and nonisothermal conditions. These results indicate that PLZT crystallization via laser annealing is nucleation-limited.