Gate-tunable frequency combs in graphene-nitride microresonators.

Optical frequency combs, which emit pulses of light at discrete, equally spaced frequencies, are cornerstones of modern-day frequency metrology, precision spectroscopy, astronomical observations, ultrafast optics and quantum information1-7. Chip-scale frequency combs, based on the Kerr and Raman nonlinearities in monolithic microresonators with ultrahigh quality factors8-10, have recently led to progress in optical clockwork and observations of temporal cavity solitons11-14. But the chromatic dispersion within a laser cavity, which determines the comb formation15,16, is usually difficult to tune with an electric field, whether in microcavities or fibre cavities. Such electrically dynamic control could bridge optical frequency combs and optoelectronics, enabling diverse comb outputs in one resonator with fast and convenient tunability. Arising from its exceptional Fermi-Dirac tunability and ultrafast carrier mobility17-19, graphene has a complex optical dispersion determined by its optical conductivity, which can be tuned through a gate voltage20,21. This has brought about optoelectronic advances such as modulators22,23, photodetectors 24 and controllable plasmonics25,26. Here we demonstrate the gated intracavity tunability of graphene-based optical frequency combs, by coupling the gate-tunable optical conductivity to a silicon nitride photonic microresonator, thus modulating its second- and higher-order chromatic dispersions by altering the Fermi level. Preserving cavity quality factors up to 106 in the graphene-based comb, we implement a dual-layer ion-gel-gated transistor to tune the Fermi level of graphene across the range 0.45-0.65 electronvolts, under single-volt-level control. We use this to produce charge-tunable primary comb lines from 2.3 terahertz to 7.2 terahertz, coherent Kerr frequency combs, controllable Cherenkov radiation and controllable soliton states, all in a single microcavity. We further demonstrate voltage-tunable transitions from periodic soliton crystals to crystals with defects, mapped by our ultrafast second-harmonic optical autocorrelation. This heterogeneous graphene microcavity, which combines single-atomic-layer nanoscience and ultrafast optoelectronics, will help to improve our understanding of dynamical frequency combs and ultrafast optics.

Multifunctional optoelectronic device based on graphene-coupled silicon photonic crystal cavities.

We present a hybrid device based on graphene-coupled silicon (Si) photonic crystal (PhC) cavities, featuring triple light detection, modulation, and switching. Through depositing single-layer graphene onto the PhC cavity, the light-graphene interaction can be enhanced greatly, which enables significant detection and modulation of the resonant wavelength. The device is designed to generate a photocurrent directly by the photovoltaic effect and has an external responsivity of ∼14 mA/W at 1530.8 nm (on resonance), which is about 10 times higher than that off-resonance. Based on the thermo-optical effect of silicon and graphene, the device is also demonstrated in electro-optical and all-optical modulation. Also, due to the high-quality (Q) factor of the resonate cavity, the device can implement low threshold optical bistable switching, and it promises a fast response speed, with a rise (fall) time of ∼0.4 µs (∼0.5 µs) in the all-optical switch and a rise (fall) time of ∼0.5 µs (∼0.5 µs) in the electro-optical hybrid switch. The multifunctional photodetector, modulator, and optical bistable switch are achieved in a single device, which greatly reduces the photonic overhead and provides potential applications for future integrated optoelectronics.

Nanometric Precision Distance Metrology via Hybrid Spectrally Resolved and Homodyne Interferometry in a Single Soliton Frequency Microcomb.

Laser interferometry serves a fundamental role in science and technology, assisting precision metrology and dimensional length measurement. During the past decade, laser frequency combs-a coherent optical-microwave frequency ruler over a broad spectral range with traceability to time-frequency standards-have contributed pivotal roles in laser dimensional metrology with ever-growing demands in measurement precision. Here we report spectrally resolved laser dimensional metrology via a free-running soliton frequency microcomb, with nanometric-scale precision. Spectral interferometry provides information on the optical time-of-flight signature, and the large free-spectral range and high coherence of the microcomb enable tooth-resolved and high-visibility interferograms that can be directly read out with optical spectrum instrumentation. We employ a hybrid timing signal from comb-line homodyne, microcomb, and background amplified spontaneous emission spectrally resolved interferometry-all from the same spectral interferogram. Our combined soliton and homodyne architecture demonstrates a 3-nm repeatability over a 23-mm nonambiguity range achieved via homodyne interferometry and over 1000-s stability in the long-term precision metrology at the white noise limits.

Gbps physical random bit generation based on the mesoscopic chaos of a silicon photonics crystal microcavity.

We present an experimental and theoretical physical random bit (PRB) generator using the mesoscopic chaos from a photonic-crystal optomechanical microcavity with a size of ∼10µm and very low operating intracavity energy of ∼60 Femto-Joule that was fabricated with CMOS compatible processes. Moreover, two kinds of PRB generation were proposed with rates over gigabits per second (Gbps). The randomness of the large PRB strings was further verified using the NIST Special Publication 800-22. In addition, the Diehard statistical test was also used to confirm the quality of the obtained PRBs. The results of this study can offer a new generation of dedicated PRB solutions that can be integrated on Si substrates, which can speed up systems and eliminate reliance on external mechanisms for randomness collection.

CMOS-compatible all-Si metasurface polarizing bandpass filters on 12-inch wafers.

The implementation of polarization controlling components enables additional functionalities of short-wave infrared (SWIR) imagers. The high-performance and mass-producible polarization controller based on Si metasurface is in high demand for the next-generation SWIR imaging system. In this work, we report the first demonstration of all-Si metasurface based polarizing bandpass filters (PBFs) on 12-inch wafers. The PBF achieves a polarization extinction ratio of above 10 dB in power within the passbands. Using the complementary metal-oxide-semiconductor (CMOS) compatible 193nm ArF deep ultra-violet (DUV) immersion lithography and inductively coupled plasma (ICP) etch processing line, a device yield of 82% is achieved.

Thermal annealing study of the mid-infrared aluminum nitride on insulator (AlNOI) photonics platform.

Aluminum nitride on insulator (AlNOI) photonics platform has great potential for mid-infrared applications thanks to the large transparency window, piezoelectric property, and second-order nonlinearity of AlN. However, the deployment of AlNOI platform might be hindered by the high propagation loss. We perform thermal annealing study and demonstrate significant loss improvement in the mid-infrared AlNOI photonics platform. After thermal annealing at 400°C for 2 hours in ambient gas environment, the propagation loss is reduced by half. Bend loss and taper coupling loss are also investigated. The performance of multimode interferometer, directional coupler, and add/drop filter are improved in terms of insertion loss, quality factor, and extinction ratio. Fourier-transform infrared spectroscopy, Raman spectroscopy, and X-ray diffraction spectroscopy suggest the loss improvement is mainly attributed to the reduction of extinction coefficient in the silicon dioxide cladding. Apart from loss improvement, appropriate thermal annealing also helps in reducing thin film stress.

Aluminum nitride on insulator (AlNOI) platform for mid-infrared photonics.

We report an aluminum nitride on insulator platform for mid-infrared (MIR) photonics applications beyond 3 µm. Propagation loss and bending loss are studied, while functional devices such as directional couplers, multimode interferometers, and add/drop filters are demonstrated with high performance. The complementary metal-oxide-semiconductor-compatible aluminum nitride offers advantages ranging from a large transparency window, high thermal and chemical resistance, to piezoelectric tunability and three-dimensional integration capability. This platform can have synergy with other photonics platforms to enable novel applications for sensing and thermal imaging in MIR.

Controllable optomechanical coupling and Drude self-pulsation plasma locking in chip-scale optomechanical cavities.

We demonstrate the controllable optomechanical coupling and Drude self-pulsation plasma locking in chip-scale optomechanical cavities. The optomechanical coupling between the optical and mechanical degrees-of-freedom is dependent on the intracavity energy via the coupled fiber position. With the deterministic optomechanical stiffening, the interaction between optomechanical oscillation and self-pulsation can be controlled. Intracavity locking with 1/6 subharmonics is obtained over a wide optical detuning range of 190.01-192.23 THz. These results bring new insights into implementations of nonlinear dynamics at mesoscopic scale, with potential applications from photonic signal processing to nonlinear dynamic networks.

Quasi-phase-matched multispectral Kerr frequency comb.

We study a new type of Kerr frequency comb where the momentum conservation law is fulfilled by azimuthal modulation of the waveguide dispersion. The concept can expand the parametric range in which a Kerr frequency comb is obtained. In a good agreement with the theoretical analysis, we demonstrate a multispectral Kerr frequency comb covering important fiber-optic communication bands. Comb coherence and absence of a sub-comb offset are confirmed by continuous-wave heterodyne beat note and amplitude noise spectra measurements. The device can be used for achieving broadband optical frequency synthesizers and high-capacity coherent communication.

Stabilized chip-scale Kerr frequency comb via a high-Q reference photonic microresonator.

We stabilize a chip-scale Si3N4 phase-locked Kerr frequency comb via locking the pump laser to an independent stable high-Q reference microresonator and locking the comb spacing to an external microwave oscillator. In this comb, the pump laser shift induces negligible impact on the comb spacing change. This scheme is a step toward miniaturization of the stabilized Kerr comb system as the microresonator reference can potentially be integrated on-chip. Fractional instability of the optical harmonics of the stabilized comb is limited by the microwave oscillator used for a comb spacing lock below 1 s averaging time and coincides with the pump laser drift in the long term.

Low-loss partial rib polarization rotator consisting only of silicon core and silica cladding.

We present a low-loss and small-footprint polarization rotator based on mode evolution. The polarization rotator is composed of an asymmetric-rib waveguide and a tapered waveguide, both of which consist only of a silicon core and a silica cladding. The rotator is fabricated under the same design rules as other device blocks, such as rib-waveguide phase shifters for photonic integration. The polarization rotator is fabricated using CMOS-based processes and provides polarization rotations with an on-chip insertion loss lower than 0.5 dB from transverse-electric (TE) to transverse-magnetic (TM) polarization and a loss lower than 1.0 dB from the TM to TE polarization in a 200 nm wavelength range extending over C and L bands.

Molecular-absorption-induced thermal bistability in PECVD silicon nitride microring resonators.

The wavelength selective linear absorption in communication C-band is investigated in CMOS-processed PECVD silicon nitride rings. In the overcoupled region, the linear absorption loss lowers the on-resonance transmission of a ring resonator and increases its overall quality factor. Both the linear absorption and ring quality factor are maximized near 1520 nm. The direct heating by phonon absorption leads to thermal optical bistable switching in PECVD silicon nitride based microring resonators. We calibrate the linear absorption rate in the microring resonator by measuring its transmission lineshape at different laser power levels, consistent with coupled mode theory calculations.

Low-loss high-speed silicon IQ modulator for QPSK/DQPSK in C and L bands.

A low-loss high-speed silicon in-phase (I) quadrature (Q) modulator is designed, fabricated and characterized. The fabricated IQ modulator has a low passive optical loss of 9 dB in C and L bands. Using the modulator, differential quadrature phase-shift keying (DQPSK) transmission at 44.6 Gb/s with differential detection is confirmed with an optical signal-to-noise ratio (OSNR) of 16.3 dB for a bit error rate (BER) of 10(-3) and a dispersion tolerance of -96 to 107 ps/nm. Moreover, in digital coherent detection, quadrature phase-shift keying (QPSK) up to 64 Gb/s are achieved with an OSNR of 11.6-11.8 dB for a BER of 10(-2) at 1530, 1550, and 1610 nm.

Near-infrared Hong-Ou-Mandel interference on a silicon quantum photonic chip.

Near-infrared Hong-Ou-Mandel quantum interference is observed in silicon nanophotonic directional couplers with raw visibilities on-chip at 90.5%. Spectrally-bright 1557-nm two-photon states are generated in a periodically-poled KTiOPO4 waveguide chip, serving as the entangled photon source and pumped with a self-injection locked laser, for the photon statistical measurements. Efficient four-port coupling in the communications C-band and in the high-index-contrast silicon photonics platform is demonstrated, with matching theoretical predictions of the quantum interference visibility. Constituents for the residual quantum visibility imperfection are examined, supported with theoretical analysis of the sequentially-triggered multipair biphoton, towards scalable high-bitrate quantum information processing and communications. The on-chip HOM interference is useful towards scalable high-bitrate quantum information processing and communications.

Cross-correlation frequency-resolved optical gating and dynamics of temporal solitons in silicon nanowire waveguides.

We demonstrate the evolution of picosecond pulses in silicon nanowire waveguides by sum frequency generation cross-correlation frequency-resolved optical gating (SFG-XFROG) and nonlinear Schrödinger equation (NLSE) modeling. Due to the unambiguous temporal direction and ultrahigh sensitivity of the SFG-XFROG, which enable observation of the pulse accelerations, the captured pulses' temporal and spectral characteristics showed remarkable agreement with NLSE predictions. The temporal intensity redistribution of the pulses through the silicon nanowire waveguide for various input pulse energies is analyzed experimentally and numerically to demonstrate the nonlinear contributions of self-phase modulation, two-photon absorption, and free carriers. It indicates that free carrier absorption dominates the pulse acceleration. The model for pulse evolution during propagation through arbitrary lengths of silicon nanowire waveguides is established by NLSE, in support of chip-scale optical interconnects and signal processing.

Electrical tracing-assisted dual-microring label­free optical bio/chemical sensors.

We propose and demonstrate a novel electrical tracing-assisted dual-microring resonator-based optical sensor system in silicon-on-insulator substrate. The system comprises one microring resonator-based sensing element and another microring resonator-based tracing element integrated with electrical controller. The resonance wavelength shift of sensing microring induced by the refractive index change is traced and determined by direct voltage supply of the electrical tunable tracing microring. Such optical sensing system eliminates the traditional wavelength-scanning method thus provide a cost effective sensing scheme. Proof-of-principle demonstration by testing polyelectrolyte multilayer shows the sensitivity of ~4.0 mW/ng∙mm-2 and the detection limit of ~5.35 pg/mm2.

11-Gb/s 80-km transmission performance of zero-chirp silicon Mach-Zehnder modulator.

The 11-Gbps 80-km transmission performance of a zero-chirp silicon Mach-Zehnder modulator has been characterized. The zero-chirp characteristic of the silicon modulator is confirmed in the constellation measurement, and gives high tolerance both for positive and negative chromatic dispersion. A low-dispersion-penalty transmission up to 80 km using the 11-Gbps non return-to-zero on-off-keying format is confirmed via bit-error-rate measurements with a performance comparable to that of a commercial lithium-niobate modulator. The dispersion tolerance at 2-dB power penalty for a bit-error-rate of 10(-3) is more than ± 950 ps/nm. Further, 22.3-Gbps binary phase-shift-keying is demonstrated, and the back-to-back power penalty with respect to the lithium-niobate modulator is less than 0.5 dB.

Integrated in-band optical signal-to-noise ratio monitor implemented on SOI platform.

Based on different coherence properties of signal and noise, we measured the in-band optical signal-to-noise ratio using an integrated thermally tunable Mach-Zehnder optical delay interferometer on SOI platform. The experimental results exhibit errors smaller than 1 dB for signals with bit rate <40 Gbps over an OSNR range of 9~30 dB. The effects of the extinction ratio, noise equivalent bandwidth and arm length difference on the implementation of measurement are analyzed.

Split Bull's eye shaped aluminum antenna for plasmon-enhanced nanometer scale germanium photodetector.

Bull's eye antennas are capable of efficiently collecting and concentrating optical signals into an ultrasmall area, offering an excellent solution to break the bottleneck between speed and photoresponse in subwavelength photodetectors. Here, we exploit the idea of split bull's eye antenna for a nanometer germanium photodetector operating at a standard communication wavelength of 1310 nm. The nontraditional plasmonic metal aluminum has been implemented in the resonant antenna structure fabricated by standard complementary metal-oxide-semiconductor (CMOS) processing. A significant enhancement in photoresponse could be achieved over the conventional bull's eye scheme due to an increased optical near-field in the active region. Moreover, with this novel antenna design the effective grating area could be significantly reduced without sacrificing device performance. This work paves the way for the future development of low-cost, high-density, and high-speed CMOS-compatible germanium-based optoelectronic devices.

Coherent terahertz radiation with 2.8-octave tunability through chip-scale photomixed microresonator optical parametric oscillation.

High-spectral-purity frequency-agile room-temperature sources in the terahertz spectrum are foundational elements for imaging, sensing, metrology, and communications. Here we present a chip-scale optical parametric oscillator based on an integrated nonlinear microresonator that provides broadly tunable single-frequency and multi-frequency oscillators in the terahertz regime. Through optical-to-terahertz down-conversion using a plasmonic nanoantenna array, coherent terahertz radiation spanning 2.8-octaves is achieved from 330 GHz to 2.3 THz, with ≈20 GHz cavity-mode-limited frequency tuning step and ≈10 MHz intracavity-mode continuous frequency tuning range at each step. By controlling the microresonator intracavity power and pump-resonance detuning, tunable multi-frequency terahertz oscillators are also realized. Furthermore, by stabilizing the microresonator pump power and wavelength, sub-100 Hz linewidth of the terahertz radiation with 10-15 residual frequency instability is demonstrated. The room-temperature generation of both single-frequency, frequency-agile terahertz radiation and multi-frequency terahertz oscillators in the chip-scale platform offers unique capabilities in metrology, sensing, imaging and communications.