Delocalized Hypervalent Silyl Radical Supported by Amidinate and Imino Substituents.

The reaction of the amidinato silylsilylene with a functionalized diaminochlorosilyl substituent, [LSiSi(Cl){(NtBu)2C(H)Ph}] (1; L = PhC(NtBu)2), with ArN═C═NAr (Ar = 2,6-iPr2C6H3) in toluene afforded the delocalized hypervalent silyl radical [LSi•(µ-CNAr)2Si{(NtBu)2C(H)Ph}] (2). It possesses a hypervalent silyl radical that delocalizes throughout the Si2C2 ring.

A smart upconversion-based light-triggered polymer for synergetic chemo-photodynamic therapy and dual-modal MR/UCL imaging.

We have developed a novel nanocomposite to achieve effective therapy and live surveillance of tumor tissue. In this study, fullerene (C60) with iron oxide (Fe3O4) nanoparticles and upconversion nanophosphors (UCNPs) was loaded into N-succinyl-N'-4-(2-nitrobenzyloxy)-succinyl-chitosan micelles (SNSC) with good biocompatibility. In addition, hydrophobic anticancer drug docetaxel (DTX) was also loaded into the nanocomposites. The experiments conducted in vitro and in vivo demonstrated that C60/Fe3O4-UCNPs@DTX@SNSC can act synergistically to kill tumor cells by releasing chemotherapy drugs at specific target site as well as generating reactive oxygen using 980nm. In addition, it can also be used for non-invasive deep magnetic resonance and upconversion fluorescence dual-mode imaging. The results indicated that this system provided an efficient method to surmount the drawback of UV or visible light-responsive polymeric systems for controlled drug release and generated reactive oxygen in deep tissues and ultimately realized the integration of dual-modal imaging and treatment.

Band-gap manipulations of monolayer graphene by phenyl radical adsorptions: a density functional theory study.

Phenyl radical (Ph˙) adsorption on monolayer graphene sheets is used to investigate the band-gap manipulation of graphene through density functional theory. Adsorption of a single Ph˙ on graphene breaks the aromatic π-bond and generates an unpaired electron, which is delocalized to the ortho or para position. Adsorption of a second radical at the ortho or para position saturates the radical by electron pairing and results in semiconducting graphene. Adsorption of a second radical at the ortho position (ortho-ortho pairing) is found to be more favorable than adsorption at the para position (ortho-para pairing), and the ortho-ortho pairing has stronger effects on band-gap opening compared with ortho-para pairing. Adsorption of even numbers of Ph˙ on graphene by ortho-ortho and ortho-para pairings, in general, increases the band gap. Our study shows promise of band-gap manipulation in monolayer graphene by Ph˙ adsorption, leading to potential wider applications of graphene.

Determination of solubility parameters of ionic liquids and ionic liquid/solvent mixtures from intrinsic viscosity.

The total and partial solubility parameters (dispersion, polar and hydrogen-bonding solubility parameters) of ten ionic liquids were determined. Intrinsic viscosity approaches were used that encompassed a one-dimensional method (1D-Method), and two different three-dimensional methods (3D-Method1 and 3D-Method2). The effect of solvent type, the dimethylacetamide (DMA) fraction in the ionic liquid, and dissolution temperature on solubility parameters were also investigated. For all types of effect, both the 1D-Method and 3D-Method2 present the same trend in the total solubility parameter. The partial solubility parameters are influenced by the cation and anion of the ionic liquid. Considering the effect on partial solubility parameters of the solvent type in the ionic liquid, it was observed that in both 3D methods, the dispersion and polar parameters of a 1-ethyl-3-methylimidazolium acetate/solvent (60:40 vol %) mixture tend to increase as the total solubility parameter of the solvent increases.

Scalable and effective enrichment of semiconducting single-walled carbon nanotubes by a dual selective naphthalene-based azo dispersant.

Semiconducting single-walled carbon nanotubes (s-SWNTs) have emerged as a promising class of electronic materials, but the metallic (m)-SWNTs present in all as-synthesized nanotube samples must be removed for many applications. A high selectivity and high yield separation method has remained elusive. A separation process based on selective chemistry appears to be an attractive route since it is usually relatively simple, but more effective chemicals are needed. Here we demonstrate the first example of a new class of dual selective compounds based on polycyclic aromatic azo compounds, specifically Direct Blue 71 (I), for high-purity separation of s-SWNTs at high yield. Highly enriched (~93% purity) s-SWNTs are produced through the simple process of standing arc-discharge SWNTs with I followed by centrifugation. The s-SWNTs total yield is up to 41%, the highest yet reported for a solution-based separation technique that demonstrates applicability in actual transistors. 91% of transistor devices fabricated with these s-SWNTs exhibited on/off ratios of 10(3) to 10(5) with the best devices showing mobility as high as 21.8 cm(2)/V s with on/off ratio of 10(4). Raman and X-ray photoelectron spectroscopic shifts and ultraviolet-visible-near-infrared (UV-vis-NIR) show that I preferentially complexes with s-SWNTs and preferentially suspends them. Preferential reaction of naphthyl radicals (generated from I with ultrasonication) with m-SWNTs is confirmed by changes in the D-band in the Raman spectroscopy, matrix-assisted desorption-ionization time-of-flight mass spectrometry (MALDI-TOF-MS), and molecular simulation results. The high selectivity of I stems from its unique dual action as both a selective dispersion agent and the generator of radicals which preferentially attack unwanted metallic species.

A silyliumylidene cation stabilized by an amidinate ligand and 4-dimethylaminopyridine.

The synthesis and reactivity of a silyliumylidene cation stabilized by an amidinate ligand and 4-dimethylaminopyridine (DMAP) are described. The reaction of the amidinate silicon(I) dimer [LSi:]2 (1; L = PhC(NtBu)2) with one equivalent of N-trimethylsilyl-4-dimethylaminopyridinium triflate [4-NMe2C5H4NSiMe3]OTf and two equivalents of DMAP in THF afforded [LSi(DMAP)]OTf (2). The ambiphilic character of 2 is demonstrated from its reactivity. Treatment of 2 with 1 in THF afforded the disilylenylsilylium triflate [L'2(L)Si]OTf (3; L' = LSi:) with the displacement of DMAP. The reaction of 2 with [K{HB(iBu)3}] and elemental sulfur in THF afforded the silylsilylene [LSiSi(H){(NtBu)2C(H)Ph}] (4) and the base-stabilized silanethionium triflate [LSi(S)DMAP]OTf (5), respectively. Compounds 2, 3, and 5 have been characterized by X-ray crystallography.

Zwitterionic base-stabilized digermadistannacyclobutadiene and tetragermacyclobutadiene.

The syntheses of a zwitterionic base-stabilized digermadistannacyclobutadiene and tetragermacyclobutadiene supported by amidinates and low-valent germanium amidinate substituents are described. The reaction of the amidinate Ge(I) dimer, [LGe:]2 (1, L=PhC(NtBu)2 ), with two equivalents of the amidinate tin(II) chloride, [LSnCl] (2), and KC8 in tetrahydrofuran (THF) at room temperature afforded a mixture of the zwitterionic base-stabilized digermadistannacyclobutadiene, [L2 Ge2 Sn2 L'2 ] (3; L'=LGe:), and the bis(amidinate) tin(II) compound, [L2 Sn:] (4). Compound 3 can also be prepared by the reaction of 1 with [L(Ar) SnCl] (5, L(Ar) =tBuC(NAr)2 , Ar=2,6-iPr2 C6 H3 ) in THF at room temperature. Moreover, the reaction of 1 with the "onio-substituent transfer" reagent [4-NMe2 -C5 H4 NSiMe3 ]OTf (8) in THF and 4-(N,N-dimethylamino)pyridine (DMAP) at room temperature afforded a mixture of the zwitterionic base-stabilized tetragermacyclobutadiene, [L4 Ge6 ] (9), the amidinium triflate, [PhC(NHtBu)2 ]OTf (10), and Me3 SiSiMe3 (11). X-ray structural data and theoretical studies show conclusively that compounds 3 and 9 have a planar and rhombic charge-separated structure. They are also nonaromatic.

Modulating the electronic properties of germanium nanowires via applied strain and surface passivation.

We report a systematic study on the surface passivation and strain effects on the electronic properties of hydrogenated germanium nanowires (H-GeNWs) with different growth orientations and diameters using density functional theory calculations. We show that increasing the coverage percentage of halogen passivations--fluorine (F) and chlorine (Cl) in particular--reduces the band gap of the GeNWs drastically but not linearly, depending on the chemical environment of the passivation sites. Moreover, we find that in general, applying strain--either compression or tensile--can only induce a decreased band gap in GeNWs but exception is found in <110> GeNWs: an increased band gap can be induced which is determined to be related to their surface structures. The current work reveals that electronic response upon structural changes caused by external factors is more sensitive in <110> GeNWs than in <100> GeNWs, suggesting that GeNWs with selected growth orientation can be applied in specialized applications that require different degrees of sensitivity or robustness.

An extensive n, π, σ-electron delocalized Si(4) ring.

The tetrasilacyclobutadiene [LSi(µ-SiL')2 SiL] (L=PhC(NtBu)2 , L'=2,6-iPr2 C6 H3 NSiMe3 ) consists of an aromatic silicon-containing four-membered ring in which two π, two σ, and two lone-pair electrons are cyclically delocalized. The electron delocalization was illustrated by theoretical studies and reactivity with elemental sulfur to form the allylic zwitterionic cyclic compound [(LSi)2 (µ-SiL')(µ-Si(S)L')] with 2π-electron delocalization along the Si3 skeleton.

An amidinate-stabilized germatrisilacyclobutadiene ylide.

The synthesis and characterization of new amidinate-stabilized germatrisilacyclobutadiene ylides [L(3)Si(3)GeL'] (L=PhC(NtBu)(2); L'=ËL; Ë=Ge (3), Si (7)) are described. Compound 3 was prepared by the reaction of [LSi-SiL] (1) with one equivalent of [LGe-GeL] (2) in THF. Compound 7 was synthesized by the reaction of 2 with excess 1 in THF. The bisamidinate germylene [L(2)Ge:] (4) is a by-product in both reactions. Moreover, compound 7 was prepared by the reaction of 3 with one equivalent of 1 in THF. Compounds 3 and 7 have been characterized by NMR spectroscopy, X-ray crystallography, and theoretical studies. The results show that compounds 3 and 7 are not antiaromatic. The puckered Si(3) Ge four-membered rings in 3 and 7 have a ylide structure, which is stabilized by amidinate ligands and the electron delocalization within the Si(3) Ge four-membered ring.

Synthesis and characterization of a singlet delocalized 2,4-diimino-1,3-disilacyclobutanediyl and a silylenylsilaimine.

The synthesis and characterization of a singlet delocalized 2,4-diimino-1,3-disilacyclobutanediyl, [LSi(µ-CNAr)(2)SiL] (2, L: PhC(NtBu)(2), Ar: 2,6-iPr(2) C(6) H(3)), and a silylenylsilaimine, [LSi(=NAr)-SiL] (3), are described. The reaction of three equivalents of the disilylene [LSi-SiL] (1) with two equivalents of ArN=C=NAr in toluene at room temperature for 12 h afforded [LSi(µ-CNAr)(2)SiL] (2) and [LSi(=NAr)-SiL] (3) in a ratio of 1:2. Compounds 2 and 3 have been characterized by NMR spectroscopy and X-ray crystallography. Compound 2 was also investigated by theoretical studies. The results show that compound 2 possesses singlet biradicaloid character with an extensive electronic delocalization throughout the Si(2)C(2) four-membered ring and exocyclic C=N bonds. Compound 3 is the first example of a silylenylsilaimine, which contains a low-valent silicon center and a silaimine substituent. A mechanism for the formation of 2 and 3 is also proposed.

Reactivity of a tin(II) (iminophosphinoyl)(thiophosphinoyl)methanediide complex toward sulfur: synthesis and 119Sn Mössbauer spectroscopic studies of [{(µ-S)SnC(PPh2═NSiMe3)(PPh2═S)}3Sn(µ3-S)].

Reaction of [(PPh(2)═NSiMe(3))(PPh(2)═S)CSn:](2) (1) with elemental sulfur in toluene afforded [{(µ-S)Sn(IV)C(PPh(2)═NSiMe(3))(PPh(2)═S)}(3)Sn(II)(µ(3)-S)] (2) and [CH(2)(PPh(2)═NSiMe(3))(PPh(2)═S)] (3). Compound 2 comprises a Sn(II)S moiety coordinated with the Sn(IV) and S atoms of a trimeric 2-stannathiomethendiide {(PPh(2)═NSiMe(3))(PPh(2)═S)CSn(µ-S)}(3). Compound 2 has been characterized by NMR spectroscopy, (119)Sn Mössbauer studies, X-ray crystallography, and theoretical studies. (119)Sn NMR spectroscopy and Mössbauer studies show the presence of Sn(IV) and Sn(II) atoms in 2. X-ray crystallography suggests that the Sn(II)S moiety does not have multiple bond character. Theoretical studies illustrate that the C(methanediide)-Sn bonds comprise a lone pair orbital on each C(methanediide) atom and an C-Sn occupied σ orbital.

Stress induced half-metallicity in surface defected germanium nanowires.

Germanium nanowires (GeNWs) with single, double, quadruple and octuple surface dangling bonds (SDBs) are investigated using density-functional-theory calculations. We show that single SDB defected GeNWs remain semiconducting as their non-defected form while double or multiple SDB defects result in either semiconducting or metallic GeNWs, depending on the defect's locations on the surface. More importantly, we show that the electronic properties of surface defected GeNWs can also be fine-tuned by applying tensile and compressive strains. Upon the right loading, the surface defected GeNWs become half-metallic. In addition, we determine that the surface defected GeNWs can be classified into three classes: (1) GeNWs with zero magnetic moment, which are either metallic or semiconducting; (2) GeNWs with net magnetic moments equal to the number of SDBs, which are semiconducting with distinct spin-up and spin-down configurations; and (3) GeNWs with net magnetic moments significantly lower than the number of SDBs. We also find that only the defected GeNWs that fall under (3) are potentially half-metallic. Our results predict that half-metallic GeNWs can be obtained via engineering of the surface defects and the structures without the presence of impurity dopants.

Water induced electrical hysteresis in germanium nanowires: a theoretical study.

We apply DFT calculations to evaluate the electronic properties of germanium nanowires (GeNWs) upon adsorption of water molecules and reveal the possible causes of the experimentally observed electrical hysteresis in GeNWs based electronic devices. We show that the absorption of water molecules on the GeNW surface would lead to the formation of hydroxyl passivated GeNWs (OH-GeNWs). The first step of the formation mechanism is physisorption of water molecules toward a Ge atom then followed by dissociation of water molecules to form OH-GeNWs, consistent with experimental observation of reversible and irreversible electrical hystereses. More importantly, we also predict that the effective masses of OH-GeNWs depend strongly on their growth orientation and depend nonlinearly on the OH coverage percentage. We propose that the electrical hysteresis phenomenon observed in experiment can be attributed to the formation of OH-GeNWs with different OH coverage percentages, along with different alignments of the OH groups on the GeNW surface, and also the presence of surface trap state defects, during the different stages of I-V measurement.

Synthesis and characterization of an amidinate-stabilized cis-1,2-disilylenylethene [cis-LSi{C(Ph)=C(H)}SiL] and a singlet delocalized biradicaloid [LSi(µ(2)-C(2)Ph(2))(2)SiL].

The synthesis and characterization of novel cis-1,2-disilylenylethene [cis-LSi{C(Ph)=C(H)}SiL] (2; L=PhC(NtBu)(2)) and a singlet delocalized biradicaloid [LSi(µ(2)-C(2)Ph(2))(2)SiL] (3) are described. Compound 2 was prepared by the reaction of [{PhC(NtBu)(2)}Si:](2) (1) with one equivalent of PhC[triple chemical bond]CH in toluene. Compound 3 was synthesized by the reaction of 1 with two equivalents of PhC[triple chemical bond]CPh in toluene. The results suggest that the reaction proceeds through an [LSi{C(Ph)==C(Ph)}SiL] intermediate, which then reacts with another molecule of PhC[triple chemical bond]CPh to form 3. Compounds 2 and 3 have been characterized by X-ray crystallography and NMR spectroscopy. X-ray crystallography and DFT calculations of 3 show that the singlet biradicals are stabilized by the amidinate ligand and the delocalization within the "Si(µ(2)-C(2)Ph(2))(2)Si" six-membered ring.

Hydrosilylation of a silicon(II) hydride: synthesis and characterization of a remarkable silylsilylene.

The synthesis and characterization of novel monomeric silylsilylenes [{PhC(NtBu)(2)}Si--Si{(NtBu)(2)C(H)Ph}R] (R=Cl (2), H (4)) are described. Compound 2 was prepared by the treatment of [{PhC(NtBu)(2)}SiHCl(2)] (1) with two equivalents of potassium graphite, whereas compound 4 was synthesized by the treatment of 1 with four equivalents of potassium graphite. The results suggest that silicon(II) hydride intermediate [{PhC(NtBu)(2)}SiH] was formed in the reduction, which underwent a hydrosilylation with the amidinate ligand of [{PhC(NtBu)(2)}SiR] (R=Cl or H) to form 2 and 4, respectively. The existence of [{PhC(NtBu)(2)}SiH] in solution was demonstrated by the treatment of [{PhC(NtBu)(2)}SiCl] (3) with [K{HB(iBu)(3)}]. Compounds 2 and 4 have been characterized by X-ray crystallography and NMR spectroscopy. The results show that compounds 2 and 4 are stable in solution or the solid state, and do not dimerize to form the corresponding disilene. DFT calculations show that the Si--Si bonds in 2 and 4 do not have multiple-bond character.

Theoretical studies on the structures, material properties, and IR spectra of polymorphs of 3,4-bis(1H-5-tetrazolyl)furoxan.

Theoretical studies on the structures, densities, and heats of formation of conformational isomers of 3,4-bis(1H-5-tetrazolyl)furoxan (H2BTF) were performed based on density functional theory (DFT) calculations. Two stable planar conformational isomers, the face-to-back and the back-to-face conformers, and one stable slightly twisted conformer, the back-to-back conformer, were predicted for H2BTF at the M06-2X/6-311 + G(d,p) level of theory. The face-to-back conformer was calculated to be the most stable conformational isomer on the potential energy surface. No stable face-to-face conformer, whether planar or tilted, was identified in the calculations. The Vienna Ab Initio Simulation Package (VASP) was used in combination with molecular dynamics simulation to explore the stable crystal forms and the densities of the stable conformational isomers. Two of them exhibited high densities: the face-to-back conformer with P21 symmetry (2.01 g/cm3) and the back-to-back conformer with Pna21 symmetry (2.05 g/cm3). Their heats of formation were also predicted to be high when calculated at the same DFT level. The detonation pressures and velocities of these polymorphs, as calculated using the EXPLO5 program, are well above those of many advanced high energy density materials, pointing to the potential use of these conformers as novel explosives with good detonation performance. Also, IR spectra are shown to be able to distinguish these denser polymorphs of H2BTF. This study suggests that it could be worth investigating whether denser polymorphs of H2BTF can be grown.

Reactivity of an amidinato silylene and germylene toward germanium(ii), tin(ii) and lead(ii) halides.

The coordination chemistry of an amidinato silylene and germylene toward group 14 element(ii) halides is described. The reaction of the amidinato silicon(ii) amide [LSiN(SiMe3)2] (1, L = PhC(NtBu)2) with SnCl2 and PbBr2 afforded the amidinato silylene-dichlorostannylene and -dibromoplumbylene adducts [L{(Me3Si)2N}SiEX2] (E = Sn, X = Cl (2); E = Pb, X = Br (3)), respectively, in which there is a lone pair of electrons on the Sn(ii) and Pb(ii) atoms. X-ray crystallography, NMR spectroscopy and theoretical studies show conclusively that the Si(ii)-E(ii) bonds are donor-acceptor interactions. Similar electronic structures were found in the amidinato germylene-dichlorogermylene and -dichlorostannylene adducts [L{(Me3Si)2N}GeECl2] (E = Ge (5), Sn (6)), which were prepared by treatment of the amidinato germanium(ii) amide [LGeN(SiMe3)2] (4) with GeCl2·dioxane and SnCl2, respectively.