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Two-dimensional (2D) antiferromagnetic (AFM) materials boasting a high Néel temperature (TN), high carrier mobility, and fast spin response under an external field are in great demand for efficient spintronics. Herein, we theoretically present the MoB3 monolayer as an ideal 2D platform for AFM spintronics. The AFM MoB3 monolayer features a symmetry-protected, 4-fold degenerate Dirac nodal line (DNL) at the Fermi level. It demonstrates a high magnetic anisotropy energy of 865 µeV/Mo and an ultrahigh TN of 1050 K, one of the highest recorded for 2D AFMs. Importantly, we reveal the ultrafast demagnetization of AFM MoB3 under laser irradiation, which induces a rapid transition from a DNL semimetallic state to a metallic state on the time scale of hundreds of femtoseconds. This work presents an effective method for designing advanced spintronics using 2D high-temperature DNL semimetals and opens up a new idea for ultrafast modulation of magnetization in topological semimetals.
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Emergent fermions arising from the excess electrons of electrides provide a new perspective for exploring semimetal states with unique Fermi surface geometries. In this study, a class of unique two-dimensional (2D) highly anisotropic Dirac fermions is designed using a sandwich structure. Based on the structural design and first-principles calculations, 2D electride MB (M = Ca/Sr, B = Cl/Br/I) is an ideal candidate material. The excess electrons of the bilayer MB could be stably localized in the interstitial cavities, constructing a natural zigzag honeycomb electron sublattice that further forms a Dirac fermion. Compared with traditional Dirac semimetals, 2D Dirac electrides exhibited rich physical properties: i) The Fermi surface shows trigonal warping in low-energy regions. In particular, the geometry of the Fermi surface determines the high anisotropy of the Fermi velocity. ii) A pair of Dirac fermions are protected by three-fold rotational symmetry and exhibit strong robustness. iii) Electride MB possesses a lower work function that strongly correlates with the surface area of the emission channel. Based on these properties, an electron-emitting device with multifunctional applications is fabricated. Therefore, this study provides an ideal platform for studying potential entanglement between structures, electrides, and topological states.
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Among two-dimensional (2D) materials, Dirac-cone materials have attracted much attention due to their extraordinary electrical properties. In this work, we propose a new 2D carbon allotrope, 2D Pmc21, which consists of 5-, 6-, 7- and 11-membered rings, and all carbon atoms are in one plane. Phonon dispersion curve calculations indicate that 2D Pmc21 is kinetically stable under ambient conditions. First-principles molecular dynamics simulations show that 2D Pmc21 has excellent thermal stability, even up to 3000 K. Of most interest are the electronic properties of the Pmc21 structure: it is a Dirac semimetal with highly anisotropic Dirac cones, and its Fermi velocity is of the same order of magnitude as that of graphene. Furthermore, the structure exhibits strain self-doping properties and an in-plane strain-tunable Fermi velocity. The structure of Pmc21 reported here shows great application potential in future electronic products.
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Upon strain, most materials shrink normal to the direction of applied strain. Similarly, if a material is compressed, it will expand in the direction orthogonal to the pressure. Few materials, those of negative Poisson ratio, show the opposite behavior. Here, we show an unprecedented feature, a material that expands normal to the direction of stress, regardless if it is strained or compressed. Such behavior, namely, half-auxeticity, is demonstrated for a borophene sheet stabilized by decorating Pd atoms. We explore Pd-decorated borophene, identify three stable phases of which one has this peculiar property of half auxeticity. After carefully analyzing stability and mechanical and electronic properties we explore the origin of this very uncommon behavior and identify it as a structural feature that may also be employed to design further 2D nanomaterials.
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The structural, electronic and magnetic properties of the T-phase and H-phase of the VS2 monolayer and their heterobilayers are studied by means of first-principles calculations. We find that the two phases of the VS2 monolayer are both ferromagnetic (FM) semiconductors and that these two monolayers form a typical van der Waals (vdW) heterostructure with a weak interlayer interaction. By comparing the energy of different magnetic configurations, the FM state of the tVS2/hVS2 heterostructure is found to be in the ground state under normal conditions or biaxial strains. Under compressive strains, the anti-FM (AFM) and FM states degenerate. Based on the band structure obtained and the work function, it is found that the T-phase and H-phase are capable of forming an efficient p-n heterostructure. Due to spontaneous charge transfer at the interface, a gapless semiconductor is formed in our HSE06 calculations. We also find that the twist angle between the monolayers has a negligible impact on the band structure of the heterostructure in its spin-down channel. Moreover, the tVS2/hVS2 heterostructure is found to switch from a gapless semiconductor to a metal or a half-metal under some given biaxial or uniaxial strains. Therefore, the heterostructure could be a half-metallic property with strains, realizing 100% polarization at the Fermi level. Our study provides the possibility of realizing 100% spin-polarization at the Fermi level in these FM vdW heterostructures, which is significant for further spin transport exploration.
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Spin-polarized materials with Dirac features have sparked great scientific interest due to their potential applications in spintronics. But such a type of structure is very rare and none has been fabricated. Here, we investigate the already experimentally synthesized manganese fluoride (MnF_{3}) as a novel spin-polarized Dirac material by using first-principles calculations. MnF_{3} exhibits multiple Dirac cones in one spin orientation, while it behaves like a large gap semiconductor in the other spin channel. The estimated Fermi velocity for each cone is of the same order of magnitude as that in graphene. The 3D band structure further reveals that MnF_{3} possesses rings of Dirac nodes in the Brillouin zone. Such a spin-polarized multiple Dirac ring feature is reported for the first time in an experimentally realized material. Moreover, similar band dispersions can be also found in other transition metal fluorides (e.g., CoF_{3}, CrF_{3}, and FeF_{3}). Our results highlight a new interesting single-spin Dirac material with promising applications in spintronics and information technologies.
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The zero-band gap nature of graphene prevents it from performing as a semi-conductor in modern electronics. Although various graphene modification strategies have been developed to address this limitation, the very small band gap of these materials and the suppressed charge carrier mobility of the devices developed still significantly hinder graphene's applications. In this work, a two dimensional (2D) WB4 monolayer, which exhibits a double Dirac cone, was conceived and assessed using density functional theory (DFT) methods, which would provide a sizable band gap while maintaining higher charge mobility with a Fermi velocity of 1.099 × 106 m s-1. Strong spin-orbit-coupling can generate an observable band gap of up to 0.27 eV that primarily originates from the d-orbit of the heavy metal atom W; therefore a 2D WB4 nanosheet would be operable at room temperature (T = 300 K) and would be a promising candidate to fabricate nanoelectronics in the upcoming post-silicon era. The phonon-spectrum and ab initio molecular dynamics calculations further demonstrate the dynamic and thermal stability of such nanosheets, thus, suggesting a potentially synthesizable Dirac material.
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Two-dimensional (2D) materials are promising for use in lithium (Li) electrodes due to their high surface ratio. By using density functional theory (DFT) calculations, we investigate the adsorption and diffusion of Li on a newly predicted 2D GeP3 material [Nano Lett., 2016, 17, 1833]. The most favourable adsorption sites for Li are identified, and a semiconducting to metallic transition induced by Li adsorption is found, which indicates excellent electrical conductivity. The GeP3 monolayer has an estimated capacity of 648 mA h g-1, which is almost twice that of commercially used graphite (375 mA h g-1). During full Li intercalation, the GeP3 layer undergoes only 1.2% lattice parameter reduction. Moreover, GeP3 possesses the advantages of a small diffusion barrier (â¼0.5 eV) and low average open-circuit voltages (â¼0.4 V). Our results highlight a new class of promising anode materials, i.e. 2D phosphide, as potential rechargeable lithium batteries with ultrahigh-capacity, superior ionic conductivity, and low average open-circuit voltage.
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Recently, partially ionic boron (γ-B28) has been predicted and observed in pure boron, in bulk phase and controlled by pressure [ Nature 2009 , 457 , 863 ]. By using ab initio evolutionary structure search, we report the prediction of ionic boron at a reduced dimension and ambient pressure, namely, the two-dimensional (2D) ionic boron. This 2D boron structure consists of graphene-like plane and B2 atom pairs with the P6/mmm space group and six atoms in the unit cell and has lower energy than the previously reported α-sheet structure and its analogues. Its dynamical and thermal stability are confirmed by the phonon-spectrum and ab initio molecular dynamics simulation. In addition, this phase exhibits double Dirac cones with massless Dirac Fermions due to the significant charge transfer between the graphene-like plane and B2 pair that enhances the energetic stability of the P6/mmm boron. A Fermi velocity (vf) as high as 2.3 × 10(6) m/s, which is even higher than that of graphene (0.82 × 10(6) m/s), is predicted for the P6/mmm boron. The present work is the first report of the 2D ionic boron at atmospheric pressure. The unique electronic structure renders the 2D ionic boron a promising 2D material for applications in nanoelectronics.
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Two-dimensional (2D) boron sheets have been successfully synthesized in recent experiments, however, some important issues remain, including the dynamical instability, high energy, and the active surface of the sheets. In an attempt to stabilize 2D boron layers, we have used density functional theory and global minimum search with the particle-swarm optimization method to predict four stable 2D boron hydride layers, namely the C2/m, Pbcm, Cmmm, and Pmmn sheets. The vibrational normal mode calculations reveal all these structures are dynamically stable, indicating potential for successful experimental synthesis. The calculated Young's modulus indicates a high mechanical strength for the C2/m and Pbcm phases. Most importantly, the C2/m, Pbcm, and Pmmn structures exhibit Dirac cones with massless Dirac fermions and the Fermi velocities for the Pbcm and Cmmm structures are even higher than that of graphene. The Cmmm phase is reported as the first discovery of Dirac ring material among boron-based 2D structures. The unique electronic structure of the 2D boron hydride sheets makes them ideal for nanoelectronics applications.
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Interfacing carbon nanodots (C-dots) with graphitic carbon nitride (g-C3N4) produces a metal-free system that has recently demonstrated significant enhancement of photo-catalytic performance for water splitting into hydrogen [Science, 2015, 347, 970-974]. However, the underlying photo-catalytic mechanism is not fully established. Herein, we have carried out density functional theory (DFT) calculations to study the interactions between g-C3N4 and trigonal/hexagonal shaped C-dots. We find that hybrid C-dots/g-C3N4 can form a type-II van der Waals heterojunction, leading to significant reduction of band gap. The C-dot decorated g-C3N4 enhances the separation of photogenerated electron and hole pairs and the composite's visible light response. Interestingly, the band alignment of C-dots and g-C3N4 calculated by the hybrid functional method indicates that C-dots act as a spectral sensitizer in hybrid C-dots/g-C3N4 for water splitting. Our results offer new theoretical insights into this metal-free photocatalyst for water splitting.
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Iodine molecules confined in the elliptical nanochannels of AlPO4-11 crystals can only rotate in the plane passing through the major axis of the elliptical cross-section due to size confinement. This leads to different dynamic behaviors of iodine from those confined in round channels of AlPO4-5 crystals under ambient conditions. In this work, we use high pressure technology to manipulate the nanoscaled iodine species confined in the elliptical channels of AlPO4-11 crystals. In situ polarized Raman measurements and theoretical simulations have been carried out to study the topological geometry of the confined iodine species upon compression. It was found that the population of iodine chains could significantly increase at the expense of standing iodine molecules under pressure up to 6 GPa, due to the pressure-induced rotation of standing iodine molecules. Besides, the contraction of the host framework along the channel axis favors the formation of iodine chains and strengthens the interaction of neighbouring molecules in a chain, consequently leading to a frequency redshift of the corresponding Raman mode. The different transformation dynamics of the confined iodine in AlPO4-11 crystals upon compression, compared to those in round channels of AlPO4-5 crystals, have been discussed in terms of the unique nanochannels that offer the quasi two-dimensional nanoscaled confinement environment.
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In this study, high pressure infrared (IR) absorption and Raman scattering studies for ammonium azide (NH4N3) were carried out at room temperature up to 20 GPa and 22 GPa, respectively. For comparison and further assignment, the vibrational spectra at ambient conditions were calculated using CASTEP code, particularly for the far- and mid-IR modes. The recorded vibrational data consistently indicated a pressure-induced phase transition at 2.9 GPa. All observed vibrational modes maintained their identities at the high pressure phase, indicating that NH4N3 was still presented in the form of ammonium cations and azide anions linked by the hydrogen bond (N-Hâ¯N). Above 2.9 GPa, the relative magnitude of the torsional mode weakened and the N-H symmetric stretch displayed a redshift, indicating strengthened hydrogen bonding energy. The opposite effects were observed above 12 GPa, where the relative magnitude of the torsional mode strengthened and the N-H symmetric stretch reverted to a blueshift, indicating weakened hydrogen bonding energy. It can be concluded that the hydrogen bonding energy exhibited a weakening (0-2.9 GPa), strengthening (2.9-12 GPa), and then again weakening (12-22 GPa) phenomena with the increasing of compression. The hydrogen bonding energy changing with the increase of pressure can be ascribed to a phase transition at 2.9 GPa and a rotational or bending behavior of azide ions at 12 GPa.
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The exploration of two-dimensional (2D) wide-band-gap semiconductors (WBGSs) holds significant scientific and technological importance in the field of condensed matter physics and is actively being pursued in optoelectronic research. In this study, we present the discovery of a novel WBGS, namely monolayer BiSnO3, using first-principles calculations in conjunction with the quasi-particle G0W0approximation. Our calculations confirm that monolayer BiSnO3exhibits moderate cleavage energy, positive phonon modes, mechanical resilience, and high temperature resistance (up to 1000 K), which demonstrate its structural stability, flexibility, and potential for experimental realization. Furthermore, band-structure calculations reveal that monolayer BiSnO3is a typical WBGS material with a band-gap energy (Eg) of 3.61 eV and possesses a unique quasi-direct electronic feature due to its quasi-flat valence band. The highest occupied valence flat-band originates from the electronic hybridization between Bi-6pand O-2pstates, which are in close proximity to the Fermi level. Remarkably, monolayer BiSnO3exhibits a high absorption capacity for ultraviolet light spanning the UVA to UVC regions, displaying optical isotropy absorption and an unusual excitonic effect. These intriguing structural and electronic properties establish monolayer BiSnO3as a promising candidate for the development of new multi-function-integrated electronic and optoelectronic devices in the emerging field of 2D WBGSs.
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Two-dimensional (2D) ferromagnetic semiconductors are highly promising candidates for spintronics, but are rarely reported with direct band gaps, high Curie temperatures (Tc), and large magnetic anisotropy. Using first-principles calculations, we predict that two ferromagnetic monolayers, BiXO3 (X = Ru, Os), are such materials with a direct band gap of 2.64 and 1.69 eV, respectively. Monte Carlo simulations reveal that the monolayers show high Tc beyond 400 K. Interestingly, both BiXO3 monolayers exhibit out-of-plane magnetic anisotropy, with magnetic anisotropy energy (MAE) of 1.07 meV per Ru for BiRuO3 and 5.79 meV per Os for BiOsO3. The estimated MAE for the BiOsO3 sheet is one order of magnitude larger than that for the CrI3 monolayer (685 µeV per Cr). Based on the second-order perturbation theory, it is revealed that the large MAE of the monolayers BiRuO3 and BiOsO3 is mainly contributed by the matrix element differences between dxy and dx2-y2 and dyz and dz2 orbitals. Importantly, the ferromagnetism remains robust in 2D BiXO3 under compressive strain, while undergoing a ferromagnetic to antiferromagnetic transition under tensile strain. The intriguing electronic and magnetic properties make BiXO3 monolayers promising candidates for nanoscale electronics and spintronics.
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By performing a swarm-intelligent global structure search combined with first-principles calculations, a stable two-dimensional (2D) AlB3 heterostructure with directed, covalent Al-B bonds forms due to a nearly perfect lattice match between 2D borophene and the Al(111) surface. The AlB3 heterosheet with the P6mm space group is composed of a planar Al(111) layer and a corrugated borophene layer, where the in-plane coordinates of Al covalently link with the corrugated B atoms. The resulting structure shows a similar interlayer interaction energy to that of the Al(111) surface layer to the bulk and high mechanical and thermal stability, possesses multiple Dirac points in the Brillouin zone with a remarkably high Fermi velocity of 1.09 × 106 m s-1, which is comparable to that of graphene. Detailed analysis of the electronic structure employing the electron localisation function and topological analysis of the electron density confirm the covalent Al-B bond with high electron localisation between the Al and B centres and with only little interatomic charge transfer. The combination of borophene with metal monolayers in 2D heterostructures opens the door to a rich chemistry with potentially unprecedented properties.
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The successful synthesis of two-dimensional (2D) boron sheets typically relies on the utilization of a silver surface, which acts as a gated substrate compensating for the electron-deficiency of boron. However, how the structures of one-dimensional (1D) boron are affected by the gating effect remains unclear. By means of an unbiased global minimum structure search and density functional theory (DFT) computations, we discovered the coexistence of 2D boron sheets and 1D ribbons triggered by electrostatic gating. Specifically, at a low excess charge density level (<0.1 e per atom), 2D boron sheets dominate the low energy configurations. As the charge density increases (>0.3 e per atom), more 1D boron ribbons emerge, while the number of 2D layers is reduced. Additionally, a number of low-lying 1D boron ribbons were discovered, among which a flat borophene-like ribbon (FBR) was predicted to be stable and possess high mechanical strength. Moreover, the electride Ca2N was identified as an ideal substrate for the fabrication of the FBR because of its ability to supply a strong electrostatic field. This work bridges the gap between 2D and 1D boron structures, reveals the polymorphism of 1D boron ribbons under the electrostatic gating effect, and in general provides broad implications for future synthesis and applications of low-dimensional boron materials.
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The discovery of two-dimensional (2D) magnetic materials with high critical temperature and intrinsic magnetic properties has attracted significant research interest. By using swarm-intelligence structure search and first-principles calculations, we predict three 2D iron arsenide monolayers (denoted as FeAs-I, II and III) with good energetic and dynamical stabilities. We find that FeAs-I and II are ferromagnets, while FeAs-III is an antiferromagnet. FeAs-I and III have sizable magnetic anisotropy comparable to the magnetic recording materials such as the FeCo alloy. Importantly, we show that FeAs-I and III have critical temperatures of 645 K and 350 K, respectively, which are above room temperature. In addition, FeAs-I and II are metallic, while FeAs-III is semiconducting with a gap comparable to Si. For FeAs-III, there exist two pairs of 2D antiferromagnetic Dirac points below the Fermi level, and it displays a giant magneto band-structure effect. The superior magnetic and electronic properties of the FeAs monolayers make them promising candidates for spintronics applications.
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Dirac half-metals have drawn great scientific interests in spintronics because of their outstanding physical properties such as the large spin polarization and massless Dirac fermions. By using first-principles calculations, we investigate the perovskite-type lanthanum manganite (LaMnO3) as a novel Dirac half-metal. Specifically, LaMnO3 displays multiple linear band crossings in the spin-up direction, while it has a large band gap (â¼5 eV) in the spin-down orientation. The intriguing linear band dispersions guarantee the ultrafast electron transport and the significant band differences between spin up and down directions promise the realization of 100% spin-polarized current and the extremely low energy consumption. Such a spin-polarized Dirac material is rare among perovskite-type compounds. By adopting the mean-field theory, the estimated Curie temperature Tc is 438.4 K. Importantly, the LaMnO3 crystal has been experimentally realized 2 decades ago, which facilitates the future experimental validation. With the novel spin-polarized electronic properties and the high possibility of experimental fabrication, LaMnO3 is ideal for the spintronic application.
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The detection of single gas molecules is a highly challenging work because it requires sensors with an ultra-high level of sensitivity. By using density functional theory, here we demonstrate that the adsorption of a paramagnetic unpaired free radical gas (NO) on a monolayer of XS2 (X = Mo, W) can trigger the transition from semiconductor to half metal. More precisely, the single-layer XS2 (X = Mo, W) with NO adsorbed on it would behave like a metal in one spin channel while acting as a semiconductor in the other spin orientation. The half-metallicity is robust and independent of the NO concentration. In contrast, no half-metallic feature can be observed after the adsorption of other free radical gases such as NO2. The unique change in electronic properties after the adsorption of NO on transition-metal sulfides highlights an effective strategy to distinguish NO from other gas species by experimentally measuring spin-resolved transmission. Our results also suggest XS2 (X = Mo, W) nanosheets can act as promising nanoscale NO sensors.