Atomic-scale probing of heterointerface phonon bridges in nitride semiconductor.

Interface phonon modes that are generated by several atomic layers at the heterointerface play a major role in the interface thermal conductance for nanoscale high-power devices such as nitride-based high-electron-mobility transistors and light-emitting diodes. Here we measure the local phonon spectra across AlN/Si and AlN/Al interfaces using atomically resolved vibrational electron energy-loss spectroscopy in a scanning transmission electron microscope. At the AlN/Si interface, we observe various interface phonon modes, of which the extended and localized modes act as bridges to connect the bulk AlN modes and bulk Si modes and are expected to boost the phonon transport, thus substantially contributing to interface thermal conductance. In comparison, no such phonon bridge is observed at the AlN/Al interface, for which partially extended modes dominate the interface thermal conductivity. This work provides valuable insights into understanding the interfacial thermal transport in nitride semiconductors and useful guidance for thermal management via interface engineering.

Chiral Charge Density Wave and Backscattering-Immune Orbital Texture in Monolayer 1T-TiTe2.

Nontrivial electronic states are attracting intense attention in low-dimensional physics. Though chirality has been identified in charge states with a scalar order parameter, its intertwining with charge density waves (CDW), film thickness, and the impact on the electronic behaviors remain less well understood. Here, using scanning tunneling microscopy, we report a 2 × 2 chiral CDW as well as a strong suppression of the Te-5p hole-band backscattering in monolayer 1T-TiTe2. These exotic characters vanish in bilayer TiTe2 in a non-CDW state. Theoretical calculations prove that chirality comes from a helical stacking of the triple-q CDW components and, therefore, can persist at the two-dimensional limit. Furthermore, the chirality renders the Te-5p bands with an unconventional orbital texture that prohibits electron backscattering. Our study establishes TiTe2 as a promising playground for manipulating the chiral ground states at the monolayer limit and provides a novel path to engineer electronic properties from an orbital degree.

Semiconductor-Metal Phase Transition and Emergent Charge Density Waves in 1T-ZrX2 (X = Se, Te) at the Two-Dimensional Limit.

A charge density wave (CDW) is a collective quantum phenomenon in metals and features a wavelike modulation of the conduction electron density. A microscopic understanding and experimental control of this many-body electronic state in atomically thin materials remain hot topics in materials physics. By means of material engineering, we realized a dimensionality and Zr intercalation induced semiconductor-metal phase transition in 1T-ZrX2 (X = Se, Te) ultrathin films, accompanied by a commensurate 2 × 2 CDW order. Furthermore, we observed a CDW energy gap of up to 22 meV around the Fermi level. Fourier-transformed scanning tunneling microscopy and angle-resolved photoemission spectroscopy reveal that 1T-ZrX2 films exhibit the simplest Fermi surface among the known CDW materials in TMDCs, consisting only of a Zr 4d derived elliptical electron conduction band at the corners of the Brillouin zone.

Berry-Phase Switch in Electrostatically Confined Topological Surface States.

Here, we visualize the trapping of topological surface states in the circular n-p junctions on the top surface of the seven-quintuple-layer three dimensional (3D) topological insulator (TI) Sb_{2}Te_{3} epitaxial films. As shown by spatially dependent and field-dependent tunneling spectra, these trapped resonances show field-induced splittings between the degenerate time-reversal-symmetric states at zero magnetic field. These behaviors are attributed unambiguously to Berry-phase switch by comparing the experimental data with both numerical and semiclassical simulations. The successful electrostatic trapping of topological surface states in epitaxial films and the observation of Berry-phase switch provide a rich platform of exploiting new ideas for TI-based quantum devices.

Direct Observation of Full-Gap Superconductivity and Pseudogap in Two-Dimensional Fullerides.

Alkali-fulleride superconductors with a maximum critical temperature T_{c}∼40 K exhibit a similar electronic phase diagram to that of unconventional high-T_{c} superconductors. Here we employ cryogenic scanning tunneling microscopy to show that trilayer K_{3}C_{60} displays fully gapped strong coupling s-wave superconductivity, accompanied by a pseudogap above T_{c}∼22 K and within vortices. A precise control of the electronic correlations and potassium doping enables us to reveal that superconductivity occurs near a superconductor-Mott-insulator transition and reaches maximum at half-filling. The s-wave symmetry retains over the entire phase diagram, which, in conjunction with an abrupt decline of the superconductivity below half-filling, indicates that alkali fullerides are predominantly phonon-mediated superconductors, although the electronic correlations also come into play.

Direct Visualization of Ambipolar Mott Transition in Cuprate CuO_{2} Planes.

Identifying the essence of doped Mott insulators is one of the major outstanding problems in condensed matter physics and the key to understanding the high-temperature superconductivity in cuprates. We report real space visualization of Mott insulator-metal transition in Sr_{1-x}La_{x}CuO_{2+y} cuprate films that cover both the electron- and hole-doped regimes. Tunneling conductance measurements directly on the copper-oxide (CuO_{2}) planes reveal a systematic shift in the Fermi level, while the fundamental Mott-Hubbard band structure remains unchanged. This is further demonstrated by exploring the atomic-scale electronic response of CuO_{2} to substitutional dopants and intrinsic defects in a sister compound Sr_{0.92}Nd_{0.08}CuO_{2}. The results may be better explained in the framework of self-modulation doping, similar to that in semiconductor heterostructures, and form a basis for developing any microscopic theories for cuprate superconductivity.

Superconductor-Insulator Transitions in Exfoliated Bi2Sr2CaCu2O8+δ Flakes.

We realize superconductor-insulator transitions (SIT) in mechanically exfoliated Bi2Sr2CaCu2O8+δ (BSCCO) flakes and address simultaneously their transport properties as well as the evolution of density of states. Back-gating via the solid ion conductor (SIC) engenders a SIT in BSCCO due to the modulation of carrier density by intercalated lithium ions. Scaling analysis indicates that the SIT follows the theoretical description of a two-dimensional quantum phase transition (2D-QPT). We further carry out tunneling spectroscopy in graphite(G)/BSCCO heterojunctions. We observe V-shaped gaps in the critical regime of the SIT. The density of states in BSCCO gets symmetrically suppressed by further going into the insulating regime. Our technique of combining solid state gating with tunneling spectroscopy can be easily applied to the study of other two-dimensional materials.

Edge States at Nematic Domain Walls in FeSe Films.

Quantum spin Hall (QSH) effect is an intriguing phenomenon arising from the helical edge states in two-dimensional topological insulators. We use molecular beam epitaxy (MBE) to prepare FeSe films with atomically sharp nematic domain boundaries, where tensile strains, nematicity suppression, and topological band inversion are simultaneously achieved. Using scanning tunneling microscopy (STM), we observe edge states at the Fermi level that spatially distribute as two distinct strips in the vicinity of the domain boundaries. At the end point of the boundaries, a bound state at the Fermi level is further observed. The topological origin of the edge states is supported by density functional theory calculations. Our findings not only demonstrate a candidate for QSH states but also provide a new pathway to realize topological superconductivity in a single-component film.

Topological edge states in a high-temperature superconductor FeSe/SrTiO3(001) film.

Superconducting and topological states are two most intriguing quantum phenomena in solid materials. The entanglement of these two states, the topological superconducting state, will give rise to even more exotic quantum phenomena. While many materials are found to be either a superconductor or a topological insulator, it is very rare that both states exist in one material. Here, we demonstrate by first-principles theory as well as scanning tunnelling spectroscopy and angle-resolved photoemission spectroscopy experiments that the recently discovered 'two-dimensional (2D) superconductor' of single-layer FeSe also exhibits 1D topological edge states within an energy gap of ∼40 meV at the M point below the Fermi level. It is the first 2D material that supports both superconducting and topological states, offering an exciting opportunity to study 2D topological superconductors through the proximity effect.

Dimensional Crossover-Induced Topological Hall Effect in a Magnetic Topological Insulator.

We report transport studies of Mn-doped Bi_{2}Te_{3} topological insulator (TI) films with an accurately controlled thickness grown by molecular beam epitaxy. We find that films thicker than five quintuple layers (QLs) exhibit the usual anomalous Hall effect for magnetic TIs. When the thickness is reduced to four QLs, however, characteristic features associated with the topological Hall effect (THE) emerge. More surprisingly, the THE vanishes again when the film thickness is further reduced to three QLs. Theoretical calculations demonstrate that the coupling between the top and bottom surface states at the dimensional crossover regime stabilizes the magnetic Skyrmion structure that is responsible for the THE.

Electronic evidence of an insulator-superconductor crossover in single-layer FeSe/SrTiO3 films.

In high-temperature cuprate superconductors, it is now generally agreed that superconductivity is realized by doping an antiferromagnetic Mott (charge transfer) insulator. The doping-induced insulator-to-superconductor transition has been widely observed in cuprates, which provides important information for understanding the superconductivity mechanism. In the iron-based superconductors, however, the parent compound is mostly antiferromagnetic bad metal, raising a debate on whether an appropriate starting point should go with an itinerant picture or a localized picture. No evidence of doping-induced insulator-superconductor transition (or crossover) has been reported in the iron-based compounds so far. Here, we report an electronic evidence of an insulator-superconductor crossover observed in the single-layer FeSe film grown on a SrTiO3 substrate. By taking angle-resolved photoemission measurements on the electronic structure and energy gap, we have identified a clear evolution of an insulator to a superconductor with increasing carrier concentration. In particular, the insulator-superconductor crossover in FeSe/SrTiO3 film exhibits similar behaviors to that observed in the cuprate superconductors. Our results suggest that the observed insulator-superconductor crossover may be associated with the two-dimensionality that enhances electron localization or correlation. The reduced dimensionality and the interfacial effect provide a new pathway in searching for new phenomena and novel superconductors with a high transition temperature.

Observation of Double-Dome Superconductivity in Potassium-Doped FeSe Thin Films.

We report on the emergence of two disconnected superconducting domes in alkali-metal potassium- (K-)doped FeSe ultrathin films grown on graphitized SiC(0001). The superconductivity exhibits hypersensitivity to K dosage in the lower-T_{c} dome, whereas in the heavily electron-doped higher-T_{c} dome it becomes spatially homogeneous and robust against disorder, supportive of a conventional Cooper-pairing mechanism. Furthermore, the heavily K-doped multilayer FeSe films all reveal a large superconducting gap of ∼14 meV, irrespective of film thickness, verifying the higher-T_{c} superconductivity only in the topmost FeSe layer. The unusual finding of a double-dome superconducting phase is a step towards the mechanistic understanding of superconductivity in FeSe-derived superconductors.

High-Temperature Superconductivity in Single-Unit-Cell FeSe Films on Anatase TiO_{2}(001).

We report on the observation of high-temperature (T_{c}) superconductivity and magnetic vortices in single-unit-cell FeSe films on anatase TiO_{2}(001) substrate by using scanning tunneling microscopy. A systematic study and engineering of interfacial properties has clarified the essential roles of substrate in realizing the high-T_{c} superconductivity, probably via interface-induced electron-phonon coupling enhancement and charge transfer. By visualizing and tuning the oxygen vacancies at the interface, we find their very limited effect on the superconductivity, which excludes interfacial oxygen vacancies as the primary source for charge transfer between the substrate and FeSe films. Our findings have placed severe constraints on any microscopic model for the high-T_{c} superconductivity in FeSe-related heterostructures.

Ultrafast Dynamics Evidence of High Temperature Superconductivity in Single Unit Cell FeSe on SrTiO_{3}.

We report the time-resolved excited state ultrafast dynamics of single unit cell (1 UC) thick FeSe films on SrTiO_{3} (STO), with FeTe capping layers. By measuring the photoexcited quasiparticles' density and lifetime, we unambiguously identify a superconducting (SC) phase transition, with a transition temperature T_{c} of 68 (-5/+2) K and a SC gap of Δ(0)=20.2±1.5 meV. The obtained electron-phonon coupling strength λ is as large as 0.48, demonstrating the likely crucial role of electron-phonon coupling in the high temperature superconductivity of the 1 UC FeSe on STO systems. We further find a 0.05 THz coherent acoustic phonon branch in the capping layer, which provides an additional decay channel to the gluing bosons.

Simultaneous electrical-field-effect modulation of both top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators.

It is crucial for the studies of the transport properties and quantum effects related to Dirac surface states of three-dimensional topological insulators (3D TIs) to be able to simultaneously tune the chemical potentials of both top and bottom surfaces of a 3D TI thin film. We have realized this in molecular beam epitaxy-grown thin films of 3D TIs, as well as magnetic 3D TIs, by fabricating dual-gate structures on them. The films could be tuned between n-type and p-type by each gate alone. Combined application of two gates can reduce the carrier density of a TI film to a much lower level than with only one of them and enhance the film resistance by 10,000%, implying that Fermi level is tuned very close to the Dirac points of both top and bottom surface states without crossing any bulk band. The result promises applications of 3D TIs in field effect devices.

Probing Dirac fermion dynamics in topological insulator Bi2Se3 films with a scanning tunneling microscope.

Scanning tunneling microscopy and spectroscopy have been used to investigate the femtosecond dynamics of Dirac fermions in the topological insulator Bi2Se3 ultrathin films. At the two-dimensional limit, bulk electrons become quantized and the quantization can be controlled by the film thickness at a single quintuple layer level. By studying the spatial decay of standing waves (quasiparticle interference patterns) off steps, we measure directly the energy and film thickness dependence of the phase relaxation length lϕ and inelastic scattering lifetime τ of topological surface-state electrons. We find that τ exhibits a remarkable (E - EF)(-2) energy dependence and increases with film thickness. We show that the features revealed are typical for electron-electron scattering between surface and bulk states.

Band Engineering of Dirac Surface States in Topological-Insulator-Based van der Waals Heterostructures.

The existence of a gapless Dirac surface band of a three dimensional (3D) topological insulator (TI) is guaranteed by the nontrivial topological character of the bulk band, yet the surface band dispersion is mainly determined by the environment near the surface. In this Letter, through in situ angle-resolved photoemission spectroscopy and first-principles calculation on 3D TI-based van der Waals heterostructures, we demonstrate that one can engineer the surface band structures of 3D TIs by surface modifications without destroying their topological nontrivial property. The result provides an accessible method to independently control the surface and bulk electronic structures of 3D TIs, and sheds light on designing artificial topological materials for electronic and spintronic purposes.

Observation of Anderson localization in ultrathin films of three-dimensional topological insulators.

Anderson localization, the absence of diffusive transport in disordered systems, has been manifested as hopping transport in numerous electronic systems, whereas in recently discovered topological insulators it has not been directly observed. Here, we report experimental demonstration of a crossover from diffusive transport in the weak antilocalization regime to variable range hopping transport in the Anderson localization regime with ultrathin (Bi_{1-x}Sb_{x})_{2}Te_{3} films. As disorder becomes stronger, negative magnetoconductivity due to the weak antilocalization is gradually suppressed, and eventually, positive magnetoconductivity emerges when the electron system becomes strongly localized. This work reveals the critical role of disorder in the quantum transport properties of ultrathin topological insulator films, in which theories have predicted rich physics related to topological phase transitions.

Mapping the Electronic Structure of Each Ingredient Oxide Layer of High-T\{c} Cuprate Superconductor Bi{2}Sr{2}CaCu{2}O{8+δ}.

Understanding the mechanism of high transition temperature (T{c}) superconductivity in cuprates has been hindered by the apparent complexity of their multilayered crystal structure. Using a cryogenic scanning tunneling microscopy (STM), we report on layer-by-layer probing of the electronic structures of all ingredient planes (BiO, SrO, CuO{2}) of Bi{2}Sr{2}CaCu_2}O{8+δ} superconductor prepared by argon-ion bombardment and annealing technique. We show that the well-known pseudogap (PG) feature observed by STM is inherently a property of the BiO planes and thus irrelevant directly to Cooper pairing. The SrO planes exhibit an unexpected van Hove singularity near the Fermi level, while the CuO{2} planes are exclusively characterized by a smaller gap inside the PG. The small gap becomes invisible near T{c}, which we identify as the superconducting gap. The above results constitute severe constraints on any microscopic model for high T{c} superconductivity in cuprates.

Observation of the Zero Hall Plateau in a Quantum Anomalous Hall Insulator.

We report experimental investigations on the quantum phase transition between the two opposite Hall plateaus of a quantum anomalous Hall insulator. We observe a well-defined plateau with zero Hall conductivity over a range of magnetic field around coercivity when the magnetization reverses. The features of the zero Hall plateau are shown to be closely related to that of the quantum anomalous Hall effect, but its temperature evolution exhibits a significant difference from the network model for a conventional quantum Hall plateau transition. We propose that the chiral edge states residing at the magnetic domain boundaries, which are unique to a quantum anomalous Hall insulator, are responsible for the novel features of the zero Hall plateau.