Detalhe da pesquisa
1.
High-performance GeSi/Ge multi-quantum well photodetector on a Ge-buffered Si substrate.
Opt Lett
; 49(10): 2793-2796, 2024 May 15.
Artigo
em Inglês
| MEDLINE | ID: mdl-38748163
2.
CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology.
Nanomaterials (Basel)
; 14(10)2024 May 09.
Artigo
em Inglês
| MEDLINE | ID: mdl-38786792
3.
Indium doping-assisted monolayer Ga2O3 exfoliation for performance-enhanced MOSFETs.
Nanoscale
; 15(28): 12105-12115, 2023 Jul 20.
Artigo
em Inglês
| MEDLINE | ID: mdl-37424434
4.
Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region.
Nanomaterials (Basel)
; 13(3)2023 Feb 02.
Artigo
em Inglês
| MEDLINE | ID: mdl-36770566
5.
Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs.
Nanomaterials (Basel)
; 12(9)2022 Apr 19.
Artigo
em Inglês
| MEDLINE | ID: mdl-35564112
6.
Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon.
Nanomaterials (Basel)
; 12(5)2022 Feb 22.
Artigo
em Inglês
| MEDLINE | ID: mdl-35269230
7.
First-Principles-Based Quantum Transport Simulations of High-Performance and Low-Power MOSFETs Based on Monolayer Ga2O3.
ACS Appl Mater Interfaces
; 14(42): 48220-48228, 2022 Oct 26.
Artigo
em Inglês
| MEDLINE | ID: mdl-36251772
8.
Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate.
Materials (Basel)
; 15(10)2022 May 18.
Artigo
em Inglês
| MEDLINE | ID: mdl-35629618
9.
Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications.
Nanomaterials (Basel)
; 12(6)2022 Mar 16.
Artigo
em Inglês
| MEDLINE | ID: mdl-35335793
10.
Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon.
Nanomaterials (Basel)
; 12(15)2022 Aug 05.
Artigo
em Inglês
| MEDLINE | ID: mdl-35957135
11.
Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser.
Micromachines (Basel)
; 13(10)2022 Sep 22.
Artigo
em Inglês
| MEDLINE | ID: mdl-36295932
12.
Nanoscale growth of a Sn-guided SiGeSn alloy on Si (111) substrates by molecular beam epitaxy.
Nanoscale Adv
; 3(4): 997-1004, 2021 Feb 23.
Artigo
em Inglês
| MEDLINE | ID: mdl-36133284
13.
Strain Modulation of Selectively and/or Globally Grown Ge Layers.
Nanomaterials (Basel)
; 11(6)2021 May 28.
Artigo
em Inglês
| MEDLINE | ID: mdl-34071167
14.
Review of Si-Based GeSn CVD Growth and Optoelectronic Applications.
Nanomaterials (Basel)
; 11(10)2021 Sep 29.
Artigo
em Inglês
| MEDLINE | ID: mdl-34684996
15.
Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD.
Nanomaterials (Basel)
; 11(4)2021 Apr 06.
Artigo
em Inglês
| MEDLINE | ID: mdl-33917367
16.
High Performance p-i-n Photodetectors on Ge-on-Insulator Platform.
Nanomaterials (Basel)
; 11(5)2021 Apr 27.
Artigo
em Inglês
| MEDLINE | ID: mdl-33925305
17.
High-quality GeSn Layer with Sn Composition up to 7% Grown by Low-temperature Magnetron Sputtering for Optoelectronic Application.
Materials (Basel)
; 12(17)2019 Aug 21.
Artigo
em Inglês
| MEDLINE | ID: mdl-31438614