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This study undertakes a comparative analysis of the structural, morphological, electrical, and magnetic characteristics of Fe-doped LaMnO3 ceramics. The solid-state reaction method was used to prepare Fe-doped LaMnO3 at different concentrations (0.00 ≤ x ≤ 1.00) and has been characterized using X-ray diffraction (XRD), Fourier transforms infrared spectroscopy (FTIR), Field emission scanning electron microscopy (FE-SEM), energy-dispersive spectroscopy (EDS), and vibrating sample magnetometry (VSM). The structural transformation from rhombohedral to orthorhombic with Fe-doping is demonstrated by Rietveld's refined XRD patterns. The positive slope in Williamsons-Hall's (W-H) plots confirms the presence of tensile strain with increasing average crystallite size. Quasi-spherical morphology of all the compositions with similar uniformity was confirmed by FESEM images. The chemical distribution of all the elements has been identified by EDS mapping images. Normal dielectric dispersion behaviour of all the samples with NTCR response is confirmed by dielectric and impedance analysis respectively. Increasing lattice volume with Fe-concentration results is increasing E a. The presence of antiferromagnetic ordering, in addition to weak ferromagnetic ordering, is indicated by the unsaturated magnetization even up to a high external field. The decrease in M S and increase in H C values due to Fe-doping reflect the influence of particle size on various magnetic parameters.
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[This corrects the article DOI: 10.1039/D3RA06340B.].
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In this study, we meticulously deposited an Al-doped ZnO nanoparticle thin film on a p-type silicon substrate using the precise sputtering method. We conducted a comprehensive exploration of the film's structure, morphology, and optical properties. X-ray diffraction (XRD) confirmed its polycrystalline wurtzite configuration with a dominant (002) orientation. High-resolution scanning electron microscopy (SEM) and atomic force microscopy (AFM) revealed a uniformly textured surface adorned with densely packed nanoparticles. Regarding optical properties, the Al-doped ZnO thin film exhibited exceptional transmittance exceeding 80% across visible and near-infrared spectra. Moving on to electrical characteristics, we assessed the Au/Al-doped ZnO/p-Si/Al heterostructure under dark and illuminated conditions. Through current-voltage (I-V) and impedance measurements, we observed significant improvements in conductivity and performance under illumination. Notably, there was an increase in current conduction and a reduction in impedance, highlighting the advantages of illumination. Collectively, these findings emphasize the promising potential of the Au/Al-doped ZnO/p-Si/Al heterostructure, particularly in the realms of optoelectronic devices and photovoltaics. With its ability to efficiently mobilize charges and adeptly assimilate light, this heterostructure stands as a frontrunner for transformative applications in these technologically vital domains.
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This manuscript investigates the structural and electrical properties of a Ba0.75Bi0.25Ni0.7Mn0.3O3 (BNMO) perovskite compound synthesized through the sol-gel method. The orthorhombic crystal structure of the sample is confirmed by X-ray diffraction analysis. The electrical conductivity of BNMO is found to increase with frequency, indicating the presence of local charge carriers. The AC electrical conductivity follows Jonscher's equation, exhibiting a plateau at low frequencies and a power-law behavior at high frequencies. The activation energy for conduction is determined to be 0.654 eV. Impedance spectroscopy reveals the presence of grain and grain boundary contributions, which are modeled using an R-CPE combination circuit. Analysis of the electrical modulus demonstrates non-Debye type relaxation and indicates the presence of charge carrier hopping between Mn2+ and Mn3+ ions. The activation energy obtained from the relaxation peaks of the modulus is found to be 0.674 eV. The dielectric constant exhibits high values that increase with temperature. This observation suggests that the capacitance behavior holds promising potential for energy storage applications, making it a suitable candidate for various technological uses.