RESUMO
Contact resistance is a multifaceted challenge faced by the 2D materials community. Large Schottky barrier heights and gap-state pinning are active obstacles that require an integrated approach to achieve the development of high-performance electronic devices based on 2D materials. In this work, we present semiconducting PtSe2 field effect transistors with all-van-der-Waals electrode and dielectric interfaces. We use graphite contacts, which enable high ION/IOFF ratios up to 109 with currents above 100 µA µm-1 and mobilities of 50 cm2â¯V-1â¯s-1 at room temperature and over 400 cm2â¯V-1â¯s-1 at 10 K. The devices exhibit high stability with a maximum hysteresis width below 36 mV nm-1. The contact resistance at the graphite-PtSe2 interface is found to be below 700 Ω µm. Our results present PtSe2 as a promising candidate for the realization of high-performance 2D circuits built solely with 2D materials.