Coulomb blockade and Coulomb staircases in CoBi nanoislands on SrTiO3(001).

We successfully fabricated two-dimensional metallic CoBi nanoislands on SrTiO3(001) substrate by molecular beam epitaxy, and systematically investigated their electronic structures by scanning tunneling microscopy and spectroscopyin situat 4.2 K. Coulomb blockade and Coulomb staircases with discrete and well-separated levels are observed for the individual nanoisland, which is attributed to single-electron tunneling via two tunnel junction barriers. They are in excellent agreement with the simulations based on orthodox theory. Furthermore, we demonstrated that the Coulomb blockade becomes weaker with increasing temperature and almost disappears at ∼22 K in our variable temperature experiment, and its full-width at half-maximum of dI/dVpeaks with temperature is ∼6 mV. Our results provide a new platform for designing single-electron transistors that have potential applications in future microelectronics.

Natural Soft/Rigid Superlattices as Anodes for High-Performance Lithium-Ion Batteries.

Volume expansion and poor conductivity are two major obstacles that hinder the pursuit of the lithium-ion batteries with long cycling life and high power density. Herein, we highlight a misfit compound PbNbS3 with a soft/rigid superlattice structure, confirmed by scanning tunneling microscopy and electrochemical characterization, as a promising anode material for high performance lithium-ion batteries with optimized capacity, stability, and conductivity. The soft PbS sublayers primarily react with lithium, endowing capacity and preventing decomposition of the superlattice structure, while the rigid NbS2 sublayers support the skeleton and enhance the migration of electrons and lithium ions, as a result leading to a specific capacity of 710 mAh g-1 at 100 mA g-1 , which is 1.6 times of NbS2 and 3.9 times of PbS. Our finding reveals the competitive strategy of soft/rigid structure in lithium-ion batteries and broadens the horizons of single-phase anode material design.

Quantum size effects on the work function of metallic thin film nanostructures.

In this paper, we present the direct observation of quantum size effects (QSE) on the work function in ultrathin Pb films. By using scanning tunneling microscopy and spectroscopy, we show that the very existence of quantum well states (QWS) in these ultrathin films profoundly affects the measured tunneling decay constant kappa, resulting in a very rich phenomenon of "quantum oscillations" in kappa as a function of thickness, L, and bias voltage, V(s). More specifically, we find that the phase of the quantum oscillations in kappa vs. L depends sensitively upon the bias voltage, which often results in a total phase reversal at different biases. On the other hand, at very low sample bias (|V(s)| < 0.03 V) the measurement of kappa vs. L accurately reflects the quantum size effect on the work function. In particular, the minima in the quantum oscillations of kappa vs. L occur at the locations where QWS cross the Fermi energy, thus directly unraveling the QSE on the work function in ultrathin films, which was predicted more than three decades ago. This further clarifies several contradictions regarding the relationship between the QWS locations and the work function.

Correlating electronic transport to atomic structures in self-assembled quantum wires.

Quantum wires, as a smallest electronic conductor, are expected to be a fundamental component in all quantum architectures. The electronic conductance in quantum wires, however, is often dictated by structural instabilities and electron localization at the atomic scale. Here we report on the evolutions of electronic transport as a function of temperature and interwire coupling as the quantum wires of GdSi(2) are self-assembled on Si(100) wire-by-wire. The correlation between structure, electronic properties, and electronic transport are examined by combining nanotransport measurements, scanning tunneling microscopy, and density functional theory calculations. A metal-insulator transition is revealed in isolated nanowires, while a robust metallic state is obtained in wire bundles at low temperature. The atomic defects lead to electron localizations in isolated nanowire, and interwire coupling stabilizes the structure and promotes the metallic states in wire bundles. This illustrates how the conductance nature of a one-dimensional system can be dramatically modified by the environmental change on the atomic scale.

Nanoscale periodic modulations on sodium chloride surface revealed by tuning fork atomic force microscopy.

The sodium chloride surface is one of the most common platforms for the study of catalysts, thin film growth, and atmospheric aerosols. Here we report a nanoscale periodic modulation pattern on the surface of a cleaved NaCl single crystal, revealed by non-contact atomic force microscopy with a tuning fork sensor. The surface pattern shows two orthogonal domains, extending over the entire cleavage surface. The spatial modulations exhibit a characteristic period of 5.4 nm, along <110> crystallographic directions of the NaCl. The modulations are robust in vacuum, not affected by the tip-induced electric field or gentle annealing (<300 °C); however, they are eliminated after exposure to water and an atomically flat surface can be recovered by subsequent thermal annealing after water exposure. A strong electrostatic charging is revealed on the cleavage surface which may facilitate the formation of the observed metastable surface reconstruction.

Ferroelectric gated electrical transport in CdS nanotetrapods.

Complex nanostructures such as branched semiconductor nanotetrapods are promising building blocks for next-generation nanoelectronics. Here we report on the electrical transport properties of individual CdS tetrapods in a field effect transistor (FET) configuration with a ferroelectric Ba(0.7)Sr(0.3)TiO(3) film as high-k, switchable gate dielectric. A cryogenic four-probe scanning tunneling microscopy (STM) is used to probe the electrical transport through individual nanotetrapods at different temperatures. A p-type field effect is observed at room temperature, owing to the enhanced gate capacitance coupling. And the reversible remnant polarization of the ferroelectric gate dielectric leads to a well-defined nonvolatile memory effect. The field effect is shown to originate from the channel tuning in the arm/core/arm junctions of nanotetrapods. At low temperature (8.5 K), the nanotetrapod devices exhibit a ferroelectric-modulated single-electron transistor (SET) behavior. The results illustrate how the characteristics of a ferroelectric such as switchable polarization and high dielectric constant can be exploited to control the functionality of individual three-dimensional nanoarchitectures.

One-Dimensional Frenkel Chain Defects in CsBi4Te6.

Understanding the detailed process of spontaneous formation of intrinsic defects and their ability to tune the electronic structures in functional materials has become a key prerequisite for their technological applications. Here, by using in situ scanning tunneling microscopy, we report the observation of one-dimensional Frenkel chain defects on the cleaved CsBi4Te6 surface due to the migration of Te atoms for the first time. Further scanning tunneling spectroscopy measurements clearly revealed a self-electron doping effect of the Frenkel chain defects, which could directly affect their thermoelectric and superconducting properties. The unique one-dimensional Frenkel tellurium atomic chain defect and its doping effect on the electronic structure observed here not only shed light on tuning the electric properties of a series of tellurides but also possess profound implications for enriching the microscopic details of defect chemistry and materials science.

Large-area, periodic, and tunable intrinsic pseudo-magnetic fields in low-angle twisted bilayer graphene.

A properly strained graphene monolayer or bilayer is expected to harbour periodic pseudo-magnetic fields with high symmetry, yet to date, a convincing demonstration of such pseudo-magnetic fields has been lacking, especially for bilayer graphene. Here, we report a definitive experimental proof for the existence of large-area, periodic pseudo-magnetic fields, as manifested by vortex lattices in commensurability with the moiré patterns of low-angle twisted bilayer graphene. The pseudo-magnetic fields are strong enough to confine the massive Dirac electrons into circularly localized pseudo-Landau levels, as observed by scanning tunneling microscopy/spectroscopy, and also corroborated by tight-binding calculations. We further demonstrate that the geometry, amplitude, and periodicity of the pseudo-magnetic fields can be fine-tuned by both the rotation angle and heterostrain. Collectively, the present study substantially enriches twisted bilayer graphene as a powerful enabling platform for exploration of new and exotic physical phenomena, including quantum valley Hall effects and quantum anomalous Hall effects.

Monolayer Behavior of NbS2 in Natural van der Waals Heterostructures.

Monolayer transition metal dichalcogenides (TMDs) constitute an important family of materials with many intriguing properties and applications. The ability to achieve large-size and high-quality monolayer TMDs is the key prerequisite toward a deep understanding and practical application of TMDs in electronics and optoelectronics. Here, on the basis of high-resolution angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS), we find a monolayer NbS2-dominated Fermi-level feature in a misfit compound, which is a type of natural heterostructures. Considering the infrequency of the synthesis approach and electronic properties of the NbS2 monolayer, our results cannot only provide direct insight into the electronic structure of van der Waals heterostructures (VDWHs) but also shed light on the way toward rationally investigating  the monolayer TMDs, which are hardly obtained and studied.

Compact low temperature scanning tunneling microscope with in-situ sample preparation capability.

We report on the design of a compact low temperature scanning tunneling microscope (STM) having in-situ sample preparation capability. The in-situ sample preparation chamber was designed to be compact allowing quick transfer of samples to the STM stage, which is ideal for preparing temperature sensitive samples such as ultra-thin metal films on semiconductor substrates. Conventional spring suspensions on the STM head often cause mechanical issues. To address this problem, we developed a simple vibration damper consisting of welded metal bellows and rubber pads. In addition, we developed a novel technique to ensure an ultra-high-vacuum (UHV) seal between the copper and stainless steel, which provides excellent reliability for cryostats operating in UHV. The performance of the STM was tested from 2 K to 77 K by using epitaxial thin Pb films on Si. Very high mechanical stability was achieved with clear atomic resolution even when using cryostats operating at 77 K. At 2 K, a clean superconducting gap was observed, and the spectrum was easily fit using the BCS density of states with negligible broadening.

Room-temperature tunneling behavior of boron nitride nanotubes functionalized with gold quantum dots.

One-dimensional arrays of gold quantum dots (QDs) on insulating boron nitride nanotubes (BNNTs) can form conduction channels of tunneling field-effect transistors. We demonstrate that tunneling currents can be modulated at room temperature by tuning the lengths of QD-BNNTs and the gate potentials. Our discovery will inspire the creative use of nanostructured metals and insulators for future electronic devices.

Nanomanipulation and nanofabrication with multi-probe scanning tunneling microscope: from individual atoms to nanowires.

The wide variety of nanoscale structures and devices demands novel tools for handling, assembly, and fabrication at nanoscopic positioning precision. The manipulation tools should allow for in situ characterization and testing of fundamental building blocks, such as nanotubes and nanowires, as they are built into functional devices. In this paper, a bottom-up technique for nanomanipulation and nanofabrication is reported by using a 4-probe scanning tunneling microscope (STM) combined with a scanning electron microscope (SEM). The applications of this technique are demonstrated in a variety of nanosystems, from manipulating individual atoms to bending, cutting, breaking carbon nanofibers, and constructing nanodevices for electrical characterizations. The combination of the wide field of view of SEM, the atomic position resolution of STM, and the flexibility of multiple scanning probes is expected to be a valuable tool for rapid prototyping in the nanoscience and nanotechnology.

Nanochannel-directed growth of multi-segment nanowire heterojunctions of metallic Au(1-x)Ge(x) and semiconducting Ge.

We report on the synthesis of multi-segment nanowire (NW) junctions of Au(1-x)Ge(x) and Ge inside the nanochannels of porous anodic aluminum oxide template. The one-dimensional heterostructures are grown with a low-temperature chemical vapor deposition process, assisted by electrodeposited Au nanowires (AuNWs). The Au-catalyzed vapor-liquid-solid growth process occurs simultaneously in multiple locations along the nanochannel, which leads to multi-segment Au(1-x)Ge(x)/Ge heterojunctions. The structures of the as-grown hybrid NWs, analyzed by using transmission electron microscopy and energy-dispersive X-ray spectroscopy elemental mapping, show clear compositional modulation with variable modulation period and controllable junction numbers. Remarkably, both GeNW and Au(1-x)Ge(x)NW segments are single crystalline with abrupt interfaces and good crystallographic coherences. The electronic and transport properties of individual NW junctions are measured by using a multi-probe scanning tunneling microscope, which confirms the semiconducting nature of Ge segments and the metallic behavior of Au(1-x)Ge(x) segments, respectively. The high yield of multiple segment NW junctions of a metal-semiconductor can facilitate the applications in nanoelectronics and optoelectronics that harness multiple functionalities of heterointerfaces.

Superconductivity at the two-dimensional limit.

Superconductivity in the extreme two-dimensional limit is studied on ultrathin lead films down to two atomic layers, where only a single channel of quantum well states exists. Scanning tunneling spectroscopy reveals that local superconducting order remains robust until two atomic layers, where the transition temperature abruptly plunges to a lower value, depending sensitively on the exact atomic structure of the film. Our result shows that Cooper pairs can still form in the last two-dimensional channel of electron states, although their binding is strongly affected by the substrate.

Quantum growth of magnetic nanoplatelets of Co on Si with high blocking temperature.

Self-organized Co nanoplatelets with a singular height, quantized lateral sizes, and unique shape and orientation have been fabricated on a template consisting of ordered Al nanocluster arrays on Si(111)-7 x 7 surfaces. Despite their small volume (a few nm(3)), these nanomagnets exhibit an unusually high blocking temperature (>100 K). The perpendicular direction for easy magnetization, the high blocking temperature, the size tunability, and the epitaxial growth on Si substrates make these nanomagnets important for applications in information technology.