RESUMO
Monocrystalline bulk silicon with doped impurities has been the widely preferred piezoresistive material for the last few decades to realize micro-electromechanical system (MEMS) sensors. However, there has been a growing interest among researchers in the recent past to explore other piezoresistive materials with varied advantages in order to realize ultra-miniature high-sensitivity sensors for area-constrained applications. Of the various alternative piezoresistive materials, silicon nanowires (SiNWs) are an attractive choice due to their benefits of nanometre range dimensions, giant piezoresistive coefficients, and compatibility with the integrated circuit fabrication processes. This review article elucidates the fundamentals of piezoresistance and its existence in various materials, including silicon. It comprehends the piezoresistance effect in SiNWs based on two different biasing techniques, viz., (i) ungated and (ii) gated SiNWs. In addition, it presents the application of piezoresistive SiNWs in MEMS-based pressure sensors, acceleration sensors, flow sensors, resonators, and strain gauges.
RESUMO
Nanowire-based technological advancements thrive in various fields, including energy generation and storage, sensors, and electronics. Among the identified nanowires, silicon nanowires (SiNWs) attract much attention as they possess unique features, including high surface-to-volume ratio, high electron mobility, bio-compatibility, anti-reflection, and elasticity. They were tested in domains of energy generation (thermoelectric, photo-voltaic, photoelectrochemical), storage (lithium-ion battery (LIB) anodes, super capacitors), and sensing (bio-molecules, gas, light, etc). These nano-structures were found to improve the performance of the system in terms of efficiency, stability, sensitivity, selectivity, cost, rapidity, and reliability. This review article scans and summarizes the significant developments that occurred in the last decade concerning the application of SiNWs in the fields of thermoelectric, photovoltaic, and photoelectrochemical power generation, storage of energy using LIB anodes, biosensing, and disease diagnostics, gas and pH sensing, photodetection, physical sensing, and electronics. The functionalization of SiNWs with various nanomaterials and the formation of heterostructures for achieving improved characteristics are discussed. This article will be helpful to researchers in the field of nanotechnology about various possible applications and improvements that can be realized using SiNW.
RESUMO
Silver nanowires (AgNWs), having excellent electrical conductivity, transparency, and flexibility in polymer composites, are reliable options for developing various sensors. As transparent conductive electrodes (TCEs), AgNWs are applied in optoelectronics, organic electronics, energy devices, and flexible electronics. In recent times, research groups across the globe have been concentrating on developing flexible and stretchable strain sensors with a specific focus on material combinations, fabrication methods, and performance characteristics. Such sensors are gaining attention in human motion monitoring, wearable electronics, advanced healthcare, human-machine interfaces, soft robotics, etc. AgNWs, as a conducting network, enhance the sensing characteristics of stretchable strain-sensing polymer composites. This review article presents the recent developments in resistive stretchable strain sensors with AgNWs as a single or additional filler material in substrates such as polydimethylsiloxane (PDMS), thermoplastic polyurethane (TPU), polyurethane (PU), and other substrates. The focus is on the material combinations, fabrication methods, working principles, specific applications, and performance metrics such as sensitivity, stretchability, durability, transparency, hysteresis, linearity, and additional features, including self-healing multifunctional capabilities.