1.
Opt Express
; 15(21): 14099-106, 2007 Oct 17.
Artigo
em Inglês
| MEDLINE
| ID: mdl-19550682
RESUMO
Electroluminescence at 1.28mum is observed in a nanopatterned silicon test structure that has been subjected to carbon implantation followed by solid-phase epitaxial regrowth for recrystalization. The sub-bandgap luminescence comes from a di-carbon complex known as 'G center'. Enrichment of silicon with carbon atoms has been achieved in a procedure consisting of two implantations and solid-phase epitaxial regrowth. Nanopatterning was done using an anodized aluminum oxide membrane as a mask for reactive ion etching. Along with the electroluminescence, an enhanced photoluminescence was measured.