Tuning Electroluminescence from Functionalized SWCNT Networks Further into the Near-Infrared.

Near-infrared electroluminescence from carbon-based emitters, especially in the second biological window (NIR-II) or at telecommunication wavelengths, is difficult to achieve. Single-walled carbon nanotubes (SWCNTs) have been proposed as a possible solution due to their tunable and narrowband emission in the near-infrared region and high charge carrier mobilities. Furthermore, the covalent functionalization of SWCNTs with a controlled number of luminescent sp3 defects leads to even more red-shifted photoluminescence with enhanced quantum yields. Here, we demonstrate that by tailoring the binding configuration of the introduced sp3 defects and hence tuning their optical trap depth, we can generate emission from polymer-sorted (6,5) and (7,5) nanotubes that is mainly located in the telecommunication O-band (1260-1360 nm). Networks of these functionalized nanotubes are integrated in ambipolar, light-emitting field-effect transistors to yield the corresponding narrowband near-infrared electroluminescence. Further investigation of the current- and carrier density-dependent electro- and photoluminescence spectra enables insights into the impact of different sp3 defects on charge transport in networks of functionalized SWCNTs.

Unified Quantification of Quantum Defects in Small-Diameter Single-Walled Carbon Nanotubes by Raman Spectroscopy.

The covalent functionalization of single-walled carbon nanotubes (SWCNTs) with luminescent quantum defects enables their application as near-infrared single-photon sources, as optical sensors, and for in vivo tissue imaging. Tuning the emission wavelength and defect density is crucial for these applications. While the former can be controlled by different synthetic protocols and is easily measured, defect densities are still determined as relative rather than absolute values, limiting the comparability between different nanotube batches and chiralities. Here, we present an absolute and unified quantification metric for the defect density in SWCNT samples based on Raman spectroscopy. It is applicable to a range of small-diameter semiconducting nanotubes and for arbitrary laser wavelengths. We observe a clear inverse correlation of the D/G+ ratio increase with nanotube diameter, indicating that curvature effects contribute significantly to the defect activation of Raman modes. Correlation of intermediate frequency modes with defect densities further corroborates their activation by defects and provides additional quantitative metrics for the characterization of functionalized SWCNTs.

Absolute Quantification of sp3 Defects in Semiconducting Single-Wall Carbon Nanotubes by Raman Spectroscopy.

The functionalization of semiconducting single-wall carbon nanotubes (SWCNTs) with luminescent sp3 defects creates red-shifted emission features in the near-infrared and boosts their photoluminescence quantum yields (PLQYs). While multiple synthetic routes for the selective introduction of sp3 defects have been developed, a convenient metric to precisely quantify the number of defects on a SWCNT lattice is not available. Here, we present a direct and simple quantification protocol based on a linear correlation of the integrated Raman D/G+ signal ratios and defect densities as extracted from PLQY measurements. Corroborated by a statistical analysis of single-nanotube emission spectra at cryogenic temperature, this method enables the quantitative evaluation of sp3 defect densities in (6,5) SWCNTs with an error of ±3 defects per micrometer and the determination of oscillator strengths for different defect types. The developed protocol requires only standard Raman spectroscopy and is independent of the defect configuration, dispersion solvent, and nanotube length.