A THz Receiver with Novel Features and Functionality.

The presented THz receiver is based on an antenna coupled titanium micro-bolometer. A new geometrical design improves the robustness and extends the lifetime of the sensor. A study of sensor lifetime using different biasing currents is presented. The lifetime was verified by several tests and over 1000 operating hours. A new micro-bolometer sensitivity measurement algorithm is presented in the paper and measurement results using the proposed algorithm are shown. The new algorithm was developed to be suitable for ATM production testing. In the paper, a novel feature called "sensitivity boosting" is described, together with its influence on sensitivity and lifetime.

Spectroscopic Terahertz Imaging at Room Temperature Employing Microbolometer Terahertz Sensors and Its Application to the Study of Carcinoma Tissues.

A terahertz (THz) imaging system based on narrow band microbolometer sensors (NBMS) and a novel diffractive lens was developed for spectroscopic microscopy applications. The frequency response characteristics of the THz antenna-coupled NBMS were determined employing Fourier transform spectroscopy. The NBMS was found to be a very sensitive frequency selective sensor which was used to develop a compact all-electronic system for multispectral THz measurements. This system was successfully applied for principal components analysis of optically opaque packed samples. A thin diffractive lens with a numerical aperture of 0.62 was proposed for the reduction of system dimensions. The THz imaging system enhanced with novel optics was used to image for the first time non-neoplastic and neoplastic human colon tissues with close to wavelength-limited spatial resolution at 584 GHz frequency. The results demonstrated the new potential of compact RT THz imaging systems in the fields of spectroscopic analysis of materials and medical diagnostics.

Metallization, Material Selection, and Bonding of Interconnections for Novel LTCC and HTCC Power Modules.

Ceramic baseplates are important elements in the power modules of electric drives. This paper presents low-temperature cofired ceramic (LTCC) and high-temperature cofired ceramic (HTCC) materials for the fabrication of three-dimensional power modules. The silver-based metallization and power module assembly are presented, together with aluminum-based power wire bonding and an industrial procedure to achieve high solderability and bondability. The results of the bond tests using different metallization materials, especially cost-effective ones, are presented, together with the assembly of the power modules. The best results were achieved with Ag metallization and 380 µm Al wire and with Ag-Pd metallization and 25 µm Al wire, both on an LTCC base. The paper concludes with a dual-pulse electrical test of the power modules, which proves the quality of metallization, the type of material selected, and the correctness of the wire bonding and assembly.

A Microbolometer System for Radiation Detection in the THz Frequency Range with a Resonating Cavity Fabricated in the CMOS Technology.

BACKGROUND: The THz sensors using microbolometers as a sensing element are reported as one of the most sensitive room-temperature THz detectors suitable for THz imaging and spectroscopic applications. Microbolometer detectors are usually fabricated using different types of the MEMS technology. The patent for the detection system presented in this paper describes a method for microbolometer fabrication using a standard CMOS technology with advanced micromachining techniques. The measured sensitivity of the sensors fabricated by the patented method is 1000 V/W at an optimal frequency and is determined by the performance of a double-dipole antenna and quarter-wavelength resonant cavity. METHOD: The paper presents a patented method for fabrication of a microbolometer system for radiation detection in the THz frequency range (16). The method is divided into several stages regarding the current silicon micromachining process. Main stages are fabrication of supporting structures for micro bridge, creation of micro cavities and fabrication of Aluminum antenna and Titanium microbolometer. Additional method for encapsulation in the vacuum is described which additionally improves the performance of bolometer. The CMOS technology is utilized for fabrication as it is cost effective and provides the possibility of larger sensor systems integration with included amplification. At other wavelengths (e.g. IR region) thermistors are usually also the receivers with the sensor resistance change provoked by self-heating. In the THz region the energy is received by an antenna coupled to a thermistor. Depending on the specific application requirement, two types of the antenna were designed and used; a narrow-band dipole antenna and a wideband log-periodic antenna. RESULTS: With method described in the paper, the microbolometer detector reaches sensitivities up to 500 V/W and noise equivalent power (NEP) down to 10 pW/√Hz. Additional encapsulation in the vacuum improves its performance at least by a factor of 2, therefore the sensitivity reaches approximately 1000 V/W and NEP down to 5 pW/√Hz. The thermal response time of bolometer is 0.5 µs. The thermistor biasing current drops with its resistance (defined by microbolometer active area), but the sensitivity rises. Typical value of biasing current is 300 µA at 680 Ω of resistance, where the sensitivity reaches highest level. Air pressure decrease highly influences the sensitivity due to lower thermal dissipation to surrounding air. The sensitivity is therefore doubled when packaged in the high vacuum (0.1Pa). CONCLUSION: The main advantage of the presented approach is that the detection devices can be fabricated by a standard silicon micromachining process. Their overall dimension is defined by the receiving antenna and they do not need any additional optic source for the operation. They are robust and appropriate for mass production and can be easily embedded or merged with other vision system in use. The developed microbolometer is highly sensitive, its noise is low and it operates at a room temperature with no additional cooling system at a normal atmospheric pressure. The output of the THz detector connected to a discrete low-noise amplifier increases the total sensitivity up to 106 V/W with no impact on the noise equivalent power of 5 pW/√HZ.