Enhanced Förster resonance energy transfer on layered metal-dielectric hyperbolic metamaterials: an excellent platform for low-threshold laser action.

Förster resonance energy transfer (FRET) is a well-known physical phenomenon, which has been widely used in a variety of fields, spanning from chemistry, and physics to optoelectronic devices. In this study, giant enhanced FRET for donor-acceptor CdSe/ZnS quantum dot (QD) pairs placed on top of Au/MoO3 multilayer hyperbolic metamaterials (HMMs) has been realized. An enhanced FRET transfer efficiency as high as 93% was achieved for the energy transfer from a blue-emitting QD to a red-emitting QD, greater than that of other QD-based FRET in previous studies. Experimental results show that the random laser action of the QD pairs is greatly increased on a hyperbolic metamaterial by the enhanced FRET effect. The lasing threshold with assistance of the FRET effect can be reduced by 33% for the mixed blue- and red-emitting as QDs compared to the pure red-emitting QDs. The underlying origins can be well understood based on the combination of several significant factors, including spectral overlap of donor emission and acceptor absorption, the formation of coherent closed loops due to multiple scatterings, an appropriate design of HMMs, and the enhanced FRET assisted by HMMs.

Quantum dots derived from two-dimensional transition metal dichalcogenides: synthesis, optical properties and optoelectronic applications.

Zero-dimensional transition metal dichalcogenides (TMD) quantum dots (QDs) have attracted a lot of attention due to their interesting fundamental properties and various applications. Compared to TMD monolayers, the QD counterpart exhibits larger values for direct transition energies, exciton binding energies, absorption coefficient, luminescence efficiency, and specific surface area. These characteristics make them useful in optoelectronic devices. In this review, recent exciting progress on synthesis, optical properties, and applications of TMD QDs is highlighted. The first part of this article begins with a brief description of the synthesis approaches, which focus on microwave-assistant heating and pulsed laser ablation methods. The second part introduces the fundamental optical properties of TMD QDs, including quantum confinement in optical absorption, excitation-wavelength-dependent photoluminescence, and many-body effects. These properties are highlighted. In the third part, we discuss lastest advancements in optoelectronic devices based on TMD QDs These devices include light-emitting diodes, solar cells, photodetectors, optical sensors, and light-controlled memory devices. Finally, a brief summary and outlook will be provided.

Dislocation characterization inc-plane GaN epitaxial layers on 6 inch Si wafer with a fast second-harmonic generation intensity mapping technique.

Second harmonic generation (SHG) intensity, Raman scattering stress, photoluminescence and reflected interference pattern are used to determine the distributions of threading dislocations (TDs) and horizontal dislocations (HDs) in thec-plane GaN epitaxial layers on 6 inch Si wafer which is a structure of high electron mobility transistor (HEMT). The Raman scattering spectra show that the TD and HD result in the tensile stress and compressive stress in the GaN epitaxial layers, respectively. Besides, the SHG intensity is confirmed that to be proportional to the stress value of GaN epitaxial layers, which explains the spatial distribution of SHG intensity for the first time. It is noted that the dislocation-mediated SHG intensity mapping image of the GaN epitaxial layers on 6 inch Si wafer can be obtained within 2 h, which can be used in the optimization of high-performance GaN based HEMTs.

All-carbon stretchable and cavity-free white lasers: publisher's note.

This publisher's note contains corrections to [Opt. Express30, 20213 (2022)10.1364/OE.457921].

All-carbon stretchable and cavity-free white lasers.

Flexible, stretchable, and bendable electronics and optoelectronics have a great potential for wide applications in smart life. An environmentally friendly, cost effective and wide-angle emission laser is indispensable for the emerging technology. In this work, circumvent the challenge issue, cavity-free and stretchable white light lasers based on all carbon materials have been demonstrated by integration of fluorescent carbon quantum dots (CQDs) and crumpled graphene. The typical emission spectrum of the cavity-free laser based on all-carbon materials has a CIE chromaticity coordinate of (0.30, 0.38) exhibiting an intriguing broadband white-light emission. The unprecedented and non-toxic stretchable and white light cavity-free lasers based on all-carbon materials can serve as next-generation optoelectronic devices for a wide range application covering solid-state lighting and future wearable technologies.

Mechanisms of negative differential resistance in glutamine-functionalized WS2quantum dots.

Understanding the mechanism of the negative differential resistance (NDR) in transition metal dichalcogenides is essential for fundamental science and the development of electronic devices. Here, the NDR of the current-voltage characteristics was observed based on the glutamine-functionalized WS2quantum dots (QDs). The NDR effect can be adjusted by varying the applied voltage range, air pressure, surrounding gases, and relative humidity. A peak-to-valley current ratio as high as 6.3 has been achieved at room temperature. Carrier trapping induced by water molecules was suggested to be responsible for the mechanism of the NDR in the glutamine-functionalized WS2QDs. Investigating the NDR of WS2QDs may promote the development of memory applications and emerging devices.

Efficiency improvement of P3CT-Na based MAPbI3solar cells with a simple wetting process.

The averaged power conversion efficiency of polyelectrolytes (P3CT-Na) based MAPbI3solar cells can be increased from 14.94% to 17.46% with a wetting method before the spin-coating process of MAPbI3precursor solutions. The effects of the wetting process on the surface, structural, optical and excitonic properties of MAPbI3thin films are investigated by using the atomic-force microscopic images, x-ray diffraction patterns, transmittance spectra, photoluminescence spectra and Raman scattering spectra. The experimental results show that the wetting process of MAPbI3precursor solution on top of the P3CT-Na/ITO/glass substrate can be used to manipulate the molecular packing structure of the P3CT-Na thin film, which determines the formation of MAPbI3thin films.

Time dependence of negative and positive photoconductivity for Si δ-doped AlGaAs/InGaAs/AlGaAs quantum well under various temperatures and various incident photon energies and intensities.

Si δ-doped AlGaAs/InGaAs/AlGaAs quantum well (QW) structure is commonly adopted as one of the core elements in modern electric and optoelectronic devices. Here, the time dependent photoconductivity spectra along the active InGaAs QW channel in a dual and symmetric Si δ-doped AlGaAs/InGaAs/AlGaAs QW structure are systematically studied under various temperatures (T = 80-300 K) and various incident photon energies (E in = 1.10-1.88 eV) and intensities. In addition to positive photoconductivity, negative photoconductivity (NPC) was observed and attributed to two origins. For T = 180-240 K with E in = 1.51-1.61 eV, the trapping of the photo-excited electrons by the interface states located inside the conduction band of InGaAs QW layer is one of the origins for NPC curves. For T = 80-120 K with E in = 1.10-1.63 eV, the photoexcitation of the excess 'supersaturated' electrons within the active InGaAs QW caused by the short cooling process is another origin.

Aggregation-induced negative differential resistance in graphene oxide quantum dots.

Negative differential resistance (NDR) devices have attracted considerable interest due to their potential applications in switches, memory devices, and analog-to-digital converters. Modulation of the NDR is an essential issue for the development of NDR-based devices. In this study, we successfully synthesized graphene oxide quantum dots (GOQDs) using graphene oxide, cysteine, and H2O2. The current-voltage characteristics of the GOQDs exhibit a clear NDR in the ambient environment at room temperature. A peak-to-valley ratio as high as 4.7 has been achieved under an applied voltage sweep from -6 to 6 V. The behavior of the NDR and its corresponding peak-to-valley ratio can be controlled by adjusting the range of applied voltages, air pressure, and relative humidity. Also, the NDR is sensitive to the the concentration of H2O2 added in the synthesis. The charge carrier injection through the trapping states, induced by the GOQD aggregation, could be responsible for the NDR behavior in GOQDs.

Origins of the s-shape characteristic in J-V curve of inverted-type perovskite solar cells.

Fullerene derivative thin films have been widely used in inverted-type perovskite solar cells as the electron transport layer (ETL) and hole blocking layer. However, the smooth contact at the interface between the hydrophobic [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and hydrophilic CH3NH3PbI3 (MAPbI3) thin film has not yet been completely understood. The contact at the PCBM/MAPbI3 interface strongly influences the photovoltaic performance. The photovoltaic devices were characterized by measuring the light intensity-dependent current density-voltage (J-V) curves and impedance spectra, which show that the contact at the PCBM/MAPbI3 interface simultaneously influences the shunt resistance (carrier recombination) and series resistance (interfacial contact). In addition, x-ray diffraction patterns, atomic force microscopic images, absorbance spectra and photoluminescence spectra were used to explore the contact at the PCBM/MAPbI3 interface. The experimental results show that the flat MAPbI3 thin film cannot be completely covered by a PCBM thin film and thereby results in the s-shape characteristic in the J-V curve of the resultant solar cells. The s-shaped J-V curve can be suppressed by increasing the crystallinity and surface roughness of the MAPbI3 thin film. With the use of an interface modification layer in between the PCBM thin film and Ag cathode, the power conversion efficiency of MAPbI3 solar cells can be increased from 10.50% to 13.71%.