Compact realization of all-attosecond pump-probe spectroscopy.

The ability to perform attosecond-pump attosecond-probe spectroscopy (APAPS) is a longstanding goal in ultrafast science. While first pioneering experiments demonstrated the feasibility of APAPS, the low repetition rates (10 to 120 Hz) and the large footprints of existing setups have so far hindered the widespread exploitation of APAPS. Here, we demonstrate two-color APAPS using a commercial laser system at 1 kHz, straightforward post-compression in a hollow-core fiber, and a compact high-harmonic generation (HHG) setup. The latter enables the generation of intense extreme-ultraviolet (XUV) pulses by using an out-of-focus HHG geometry and by exploiting a transient blueshift of the driving laser in the HHG medium. Near-isolated attosecond pulses are generated, as demonstrated by one-color and two-color XUV-pump XUV-probe experiments. Our concept allows selective pumping and probing on extremely short timescales in many laboratories and permits investigations of fundamental processes that are not accessible by other pump-probe techniques.

Large-Area Fabrication of LIPSS for Wetting Control Using Multi-Parallel Femtosecond Laser Processing.

In this research, the wetting property control of a stainless-steel surface, structured using parallel processing via an array of 64-femtosecond laser beams, is presented. The scanning of an 8 × 8-beam array over the sample was used to uniformly cover the large areas with LIPSS. The static water contact angle and the LIPSS period dependence on processing parameters were investigated. The wettability control of water droplets on laser-patterned stainless steel, ranging from contact angles of ~63°, similar to those of the plain surface, to the superhydrophobic surface with contact angles > 150°, was achieved. The relationship between the static water contact angle and the LIPSS parameters in the Fourier plane was investigated.

Laser Processing of Transparent Wafers with a AlGaN/GaN Heterostructures and High-Electron Mobility Devices on a Backside.

Sapphire and silicon carbide substrates are used for growth of the III-N group heterostructures to obtain the electronic devices for high power and high frequency applications. Laser micromachining of deep channels in the frontside of the transparent wafers followed by mechanical cleavage along the ablated trench is a useful method for partitioning of such substrates after the development of the electronics on a backside. However, in some cases damage to the component performance occurs. Therefore, the influence of various parameters of the laser processing, such as fluence in the spot size, substrate thickness, orientation, and the polarization of focused laser beam, to the formation of damage zones at both sides of the transparent substrate with thin coatings when ablating the trenches from one side was investigated. The vicinity effect of the ablated trenches on the performance of the electronics was also evaluated, confirming the laser micromachining suitability for the dicing of transparent wafers with high accuracy and flexibility.