Effect of Nitrogen Doping on the Optical Bandgap and Electrical Conductivity of Nitrogen-Doped Reduced Graphene Oxide.

Graphene as a material for optoelectronic design applications has been significantly restricted owing to zero bandgap and non-compatible handling procedures compared with regular microelectronic ones. In this work, nitrogen-doped reduced graphene oxide (N-rGO) with tunable optical bandgap and enhanced electrical conductivity was synthesized via a microwave-assisted hydrothermal method. The properties of the synthesized N-rGO were determined using XPS, FTIR and Raman spectroscopy, UV/vis, as well as FESEM techniques. The UV/vis spectroscopic analysis confirmed the narrowness of the optical bandgap from 3.4 to 3.1, 2.5, and 2.2 eV in N-rGO samples, where N-rGO samples were synthesized with a nitrogen doping concentration of 2.80, 4.53, and 5.51 at.%. Besides, an enhanced n-type electrical conductivity in N-rGO was observed in Hall effect measurement. The observed tunable optoelectrical characteristics of N-rGO make it a suitable material for developing future optoelectronic devices at the nanoscale.

A Review on the Development of Tunable Graphene Nanoantennas for Terahertz Optoelectronic and Plasmonic Applications.

Exceptional advancement has been made in the development of graphene optical nanoantennas. They are incorporated with optoelectronic devices for plasmonics application and have been an active research area across the globe. The interest in graphene plasmonic devices is driven by the different applications they have empowered, such as ultrafast nanodevices, photodetection, energy harvesting, biosensing, biomedical imaging and high-speed terahertz communications. In this article, the aim is to provide a detailed review of the essential explanation behind graphene nanoantennas experimental proofs for the developments of graphene-based plasmonics antennas, achieving enhanced light-matter interaction by exploiting graphene material conductivity and optical properties. First, the fundamental graphene nanoantennas and their tunable resonant behavior over THz frequencies are summarized. Furthermore, incorporating graphene-metal hybrid antennas with optoelectronic devices can prompt the acknowledgment of multi-platforms for photonics. More interestingly, various technical methods are critically studied for frequency tuning and active modulation of optical characteristics, through in situ modulations by applying an external electric field. Second, the various methods for radiation beam scanning and beam reconfigurability are discussed through reflectarray and leaky-wave graphene antennas. In particular, numerous graphene antenna photodetectors and graphene rectennas for energy harvesting are studied by giving a critical evaluation of antenna performances, enhanced photodetection, energy conversion efficiency and the significant problems that remain to be addressed. Finally, the potential developments in the synthesis of graphene material and technological methods involved in the fabrication of graphene-metal nanoantennas are discussed.

Dynamic Absorption Enhancement and Equivalent Resonant Circuit Modeling of Tunable Graphene-Metal Hybrid Antenna.

Plasmonic antennas are attractive optical components of the optoelectronic devices, operating in the far-infrared regime for sensing and imaging applications. However, low optical absorption hinders its potential applications, and their performance is limited due to fixed resonance frequency. In this article, a novel gate tunable graphene-metal hybrid plasmonic antenna with stacking configuration is proposed and investigated to achieve tunable performance over a broad range of frequencies with enhanced absorption characteristics. The hybrid graphene-metal antenna geometry is built up with a hexagon radiator that is supported by the Al2O3 insulator layer and graphene reflector. This stacked structure is deposited in the high resistive Si wafer substrate, and the hexagon radiator itself is a sandwich structure, which is composed of gold hexagon structure and two multilayer graphene stacks. The proposed antenna characteristics i.e., tunability of frequency, the efficiency corresponding to characteristics modes, and the tuning of absorption spectra, are evaluated by full-wave numerical simulations. Besides, the unity absorption peak that was realized through the proposed geometry is sensitive to the incident angle of TM-polarized incidence waves, which can flexibly shift the maxima of the absorption peak from 30 THz to 34 THz. Finally, an equivalent resonant circuit model for the investigated antenna based on the simulations results is designed to validate the antenna performance. Parametric analysis of the proposed antenna is carried out through altering the geometric parameters and graphene parameters in the Computer Simulation Technology (CST) studio. This clearly shows that the proposed antenna has a resonance frequency at 33 THz when the graphene sheet Fermi energy is increased to 0.3 eV by applying electrostatic gate voltage. The good agreement of the simulation and equivalent circuit model results makes the graphene-metal antenna suitable for the realization of far-infrared sensing and imaging device containing graphene antenna with enhanced performance.

A Review on Graphene-Based Light Emitting Functional Devices.

In recent years, the field of nanophotonics has progressively developed. However, constant demand for the development of new light source still exists at the nanometric scale. Light emissions from graphene-based active materials can provide a leading platform for the development of two dimensional (2-D), flexible, thin, and robust light-emitting sources. The exceptional structure of Dirac's electrons in graphene, massless fermions, and the linear dispersion relationship with ultra-wideband plasmon and tunable surface polarities allows numerous applications in optoelectronics and plasmonics. In this article, we present a comprehensive review of recent developments in graphene-based light-emitting devices. Light emissions from graphene-based devices have been evaluated with different aspects, such as thermal emission, electroluminescence, and plasmons assisted emission. Theoretical investigations, along with experimental demonstration in the development of graphene-based light-emitting devices, have also been reviewed and discussed. Moreover, the graphene-based light-emitting devices are also addressed from the perspective of future applications, such as optical modulators, optical interconnects, and optical sensing. Finally, this review provides a comprehensive discussion on current technological issues and challenges related to the potential applications of emerging graphene-based light-emitting devices.

Boron-Doped Reduced Graphene Oxide with Tunable Bandgap and Enhanced Surface Plasmon Resonance.

Graphene and its hybrids are being employed as potential materials in light-sensing devices due to their high optical and electronic properties. However, the absence of a bandgap in graphene limits the realization of devices with high performance. In this work, a boron-doped reduced graphene oxide (B-rGO) is proposed to overcome the above problems. Boron doping enhances the conductivity of graphene oxide and creates several defect sites during the reduction process, which can play a vital role in achieving high-sensing performance of light-sensing devices. Initially, the B-rGO is synthesized using a modified microwave-assisted hydrothermal method and later analyzed using standard FESEM, FTIR, XPS, Raman, and XRD techniques. The content of boron in doped rGO was found to be 6.51 at.%. The B-rGO showed a tunable optical bandgap from 2.91 to 3.05 eV in the visible spectrum with an electrical conductivity of 0.816 S/cm. The optical constants obtained from UV-Vis absorption spectra suggested an enhanced surface plasmon resonance (SPR) response for B-rGO in the theoretical study, which was further verified by experimental investigations. The B-rGO with tunable bandgap and enhanced SPR could open up the solution for future high-performance optoelectronic and sensing applications.

Resonant cavity effect optimization of III-nitride thin-film flip-chip light-emitting diodes with microsphere arrays.

Comprehensive studies were carried out to investigate the light extraction efficiency of thin-film flip-chip (TFFC) light-emitting diodes (LEDs) with anatase TiO(2) microsphere arrays by employing the finite-difference time-domain method. The quantum well position and the resonant cavity effect were studied to obtain optimum light extraction for the planar TFFC LED. Further enhancement in light extraction was achieved by depositing microsphere arrays on the TFFC LED. The calculation results showed that the sphere diameter, packing density, and packing configuration have significant effects on the light extraction efficiency. A maximum light extraction efficiency of 75% in TFFC LEDs with microsphere arrays has been achieved. This study demonstrates the importance of optimizing the quantum well position, cavity thickness, sphere diameter, sphere packing density, and packing configuration for enhancing the light extraction efficiency of TFFC LEDs with microsphere arrays.

Aspect ratio engineering of microlens arrays in thin-film flip-chip light-emitting diodes.

Light extraction efficiency of thin-film flip-chip InGaN-based light-emitting diodes (LEDs) with a TiO2 microlens arrays was calculated by employing the finite-difference time-domain method. The microlens arrays, formed by embedding hexagonal close-packed TiO2 sphere arrays in a polystyrene (PS) layer, were placed on top of the InGaN LED to serve as an intermediate medium for light extraction. By tuning the thickness of the PS layer, in-coupling and out-coupling efficiencies were optimized to achieve maximum light extraction efficiency. A thicker PS layer resulted in higher in-coupling efficiency, while a thinner PS layer led to higher out-coupling efficiency. Thus, the maximum light extraction efficiency becomes a trade-off between in-coupling and out-coupling efficiency. In addition, the cavity formed by the PS layer also affects light extraction from the LED. Our study reveals that a maximum light extraction efficiency of 86% was achievable by tuning PS thickness to 75 nm with maximized in-coupling and out-coupling efficiency accompanied by the optimized resonant cavity condition.

Hybrid organic-inorganic materials for novel photonic applications.

This novel joint feature issue on "Hybrid organic-inorganic materials for photonic applications" in Applied Optics and Optics Materials Express comprises 14 papers on liquid crystals, polymers, photoconductive materials, and gratings and filters. It is hoped that this feature issue encourages and stimulates further research into hybrid materials with enhanced linear and nonlinear optical properties, their mechanisms of operation, and their applications.

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells.

Optimization of internal quantum efficiency (IQE) for InGaN quantum wells (QWs) light-emitting diodes (LEDs) is investigated. Staggered InGaN QWs with large electron-hole wavefunction overlap and improved radiative recombination rate are investigated for nitride LEDs application. The effect of interface abruptness in staggered InGaN QWs on radiative recombination rate is studied. Studies show that the less interface abruptness between the InGaN sub-layers will not affect the performance of the staggered InGaN QWs detrimentally. The growths of linearly-shaped staggered InGaN QWs by employing graded growth temperature grading are presented. The effect of current injection efficiency on IQE of InGaN QWs LEDs and other approaches to reduce dislocation in InGaN QWs LEDs are also discussed. The optimization of both radiative efficiency and current injection efficiency in InGaN QWs LEDs are required for achieving high IQE devices emitting in the green spectral regime and longer.

Functionalized Reduced Graphene Oxide Thin Films for Ultrahigh CO2 Gas Sensing Performance at Room Temperature.

The demand for carbon dioxide (CO2) gas detection is increasing nowadays. However, its fast detection at room temperature (RT) is a major challenge. Graphene is found to be the most promising sensing material for RT detection, owing to its high surface area and electrical conductivity. In this work, we report a highly edge functionalized chemically synthesized reduced graphene oxide (rGO) thin films to achieve fast sensing response for CO2 gas at room temperature. The high amount of edge functional groups is prominent for the sorption of CO2 molecules. Initially, rGO is synthesized by reduction of GO using ascorbic acid (AA) as a reducing agent. Three different concentrations of rGO are prepared using three AA concentrations (25, 50, and 100 mg) to optimize the material properties such as functional groups and conductivity. Thin films of three different AA reduced rGO suspensions (AArGO25, AArGO50, AArGO100) are developed and later analyzed using standard FTIR, XRD, Raman, XPS, TEM, SEM, and four-point probe measurement techniques. We find that the highest edge functionality is achieved by the AArGO25 sample with a conductivity of ~1389 S/cm. The functionalized AArGO25 gas sensor shows recordable high sensing properties (response and recovery time) with good repeatability for CO2 at room temperature at 500 ppm and 50 ppm. Short response and recovery time of ~26 s and ~10 s, respectively, are achieved for 500 ppm CO2 gas with the sensitivity of ~50 Hz/µg. We believe that a highly functionalized AArGO CO2 gas sensor could be applicable for enhanced oil recovery, industrial and domestic safety applications.

Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures.

Improvement of light extraction efficiency of InGaN light emitting diodes (LEDs) using polydimethylsiloxane (PDMS) concave microstructures arrays was demonstrated. The size effect of the concave microstructures on the light extraction efficiency of III-Nitride LEDs was studied. Depending on the size of the concave microstructures, ray tracing simulations show that the use of PDMS concave microstructures arrays can lead to increase in light extraction efficiency of InGaN LEDs by 1.5 to 2.0 times. Experiments utilizing 2.0 micron thick PDMS with 1.0 micron diameter of the PDMS concave microstructures arrays demonstrated 1.70 times improvement in light extraction efficiency, which is consistent with improvement of 1.77 times predicted from simulation. The enhancement in light extraction efficiency is attributed to increase in effective photon escape cone due to PDMS concave microstructures arrays.

Band Anti-Crossing Model in Dilute-As GaNAs Alloys.

The band structure of the dilute-As GaNAs material is explained by the hybridization of localized As-impurity states with the valance band structure of GaN. Our approach employs the use of Density Functional Theory (DFT) calculated band structures, along with experimental results, to determine the localized As-impurity energy level and coupling parameters in the band anti-crossing (BAC) k ∙ p model for N-rich alloys. This model captures the reduction of bandgap with increasing arsenic incorporation and provides a tool for device-level design with the material within the context of the k ∙ p formalism. The analysis extends to calculating the effect of the arsenic impurities on hole (heavy, light and split-off) effective masses and predicting the trend of the bandgap across the entire composition range.

First-Principle Study of the Optical Properties of Dilute-P GaN1-xPx Alloys.

An investigation on the optical properties of dilute-P GaN1-xPx alloys by First-Principle Density Functional Theory (DFT) methods is presented, for phosphorus (P) content varying from 0% up to 12.5%. Findings on the imaginary and real part of the dielectric function are analyzed and the results are compared with previously reported theoretical works on GaN. The complex refractive index, normal-incidence reflectivity and birefringence are presented and a difference in the refractive index in the visible regime between GaN and GaNP alloys of ~0.3 can be engineered by adding minute amounts of phosphorus, indicating strong potential for refractive index tunability. The optical properties of the GaN1-xPx alloys indicate their strong potential for implementation in various III-nitride-based photonic waveguide applications and Distributed Bragg Reflectors (DBR).

Surface Plasmon Coupling in GaN:Eu Light Emitters with Metal-Nitrides.

Metal-nitrides of hafnium nitride (HfN), zirconium nitride (ZrN) and titanium nitride (TiN) are investigated as plasmonic materials to enhance the internal quantum efficiency of a GaN:Eu red light emitter. Theoretical calculations are performed to evaluate the surface plasmon polariton dispersion relation and Purcell enhancement factor for a single metal-nitride layer on top of the GaN:Eu emitter. Our findings suggest that among the metal-nitrides investigated in this study, TiN is the most promising candidate for use as plasmonic material to increase the internal quantum efficiency in GaN:Eu red light emitters.

Ultra-Broadband Optical Gain in III-Nitride Digital Alloys.

A novel III-Nitride digital alloy (DA) with ultra-broadband optical gain is proposed. Numerical analysis shows a 50-period InN/GaN DA yields minibands that are densely quantized by numerous confined states. Interband transitions between the conduction and valence minibands create ultra-broadband optical gain spectra with bandwidths up to ~1 µm that can be tuned from the red to infrared. In addition, the ultra-broadband optical gain, bandwidth, and spectral coverage of the III-Nitride DA is very sensitive to layer thickness and other structural design parameters. This study shows the promising potential of the III-Nitride DAs with tunable ultra-broadband interband optical gain for use in semiconductor optical amplifiers and future III-Nitride photonic integration applications.

Publisher Correction: Crystal Orientation Dependence of Gallium Nitride Wear.

A correction to this article has been published and is linked from the HTML version of this paper. The error has been fixed in the paper.

Shear-Induced Changes of Electronic Properties in Gallium Nitride.

We show that sliding on the surface of GaN can permanently change the surface band structure, resulting in an increased degree of band bending by more than 0.5 eV. We hypothesize that shear and contact stresses introduce vacancies that cause a spatially variant band bending. Band bending is observed by shifts and broadening of core-level binding energies toward lower values in X-ray photoelectron spectroscopy. The extent of band bending is controlled by humidity, number of sliding cycles and applied load, presenting opportunities for scalable tuning of the degree of band bending on a GaN surface. Scanning transmission electron microscopy revealed that the epitaxy of GaN was preserved up to the surface with regions of defects near the surface. The hypothesized mechanism of band bending is shear-induced defect generation, which has been shown to affect the surface states. The ability to introduce band bending at the GaN surface is promising for applications in photovoltaics, photocatalysis, gas sensing, and photoelectrochemical processes.

III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice Nanostructures.

The III-Nitride digital alloy (DA) is comprehensively studied as a short-period superlattice nanostructure consisting of ultra-thin III-Nitride epitaxial layers. By stacking the ultra-thin III-Nitride epitaxial layers periodically, these nanostructures are expected to have comparable optoelectronic properties as the conventional III-Nitride alloys. Here we carried out numerical studies on the InGaN DA showing the tunable optoelectronic properties of the III-Nitride DA. Our study shows that the energy gap of the InGaN DA can be tuned from ~0.63 eV up to ~2.4 eV, where the thicknesses and the thickness ratio of each GaN and InN ultra-thin binary layers within the DA structure are the key factors for tuning bandgap. Correspondingly, the absorption spectra of the InGaN DA yield broad wavelength tunability which is comparable to that of bulk InGaN ternary alloy. In addition, our investigation also reveals that the electron-hole wavefunction overlaps are remarkably large in the InGaN DA structure despite the existence of strain effect and build-in polarization field. Our findings point out the potential of III-Nitride DA as an artificially engineered nanostructure for optoelectronic device applications.

AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics.

The AlN/GaN digital alloy (DA) is a superlattice-like nanostructure formed by stacking ultra-thin ( ≤ 4 monolayers) AlN barriers and GaN wells periodically. Here we performed a comprehensive study on the electronics and optoelectronics properties of the AlN/GaN DA for mid- and deep-ultraviolet (UV) applications. Our numerical analysis indicates significant miniband engineering in the AlN/GaN DA by tuning the thicknesses of AlN barriers and GaN wells, so that the effective energy gap can be engineered from ~3.97 eV to ~5.24 eV. The band structure calculation also shows that the valence subbands of the AlN/GaN DA is properly rearranged leading to the heavy-hole (HH) miniband being the top valence subband, which results in the desired transverse-electric polarized emission. Furthermore, our study reveals that the electron-hole wavefunction overlaps in the AlN/GaN DA structure can be remarkably enhanced up to 97% showing the great potential of improving the internal quantum efficiency for mid- and deep-UV device application. In addition, the optical absorption properties of the AlN/GaN DA are analyzed with wide spectral coverage and spectral tunability in mid- and deep-UV regime. Our findings suggest the potential of implementing the AlN/GaN DA as a promising active region design for high efficiency mid- and deep-UV device applications.

Investigations of the Optical Properties of GaNAs Alloys by First-Principle.

We present a Density Functional Theory (DFT) analysis of the optical properties of dilute-As GaN1-xAsx alloys with arsenic (As) content ranging from 0% up to 12.5%. The real and imaginary parts of the dielectric function are investigated, and the results are compared to experimental and theoretical values for GaN. The analysis extends to present the complex refractive index and the normal-incidence reflectivity. The refractive index difference between GaN and GaNAs alloys can be engineered to be up to ~0.35 in the visible regime by inserting relatively low amounts of As-content into the GaN system. Thus, the analysis elucidates on the birefringence of the dilute-As GaNAs alloys and comparison to other experimentally characterized III-nitride systems is drawn. Our findings indicate the potential of GaNAs alloys for III-nitride based waveguide and photonic circuit design applications.